公开(公告)号：US08739573B2

公开(公告)日：2014-06-03

申请号：US13389392

申请日：2010-08-09

申请人： Toshiaki Sudo ,  Eriko Suzuki ,  Hiroshi Kishi ,  Takeshi Fujita

发明人： Toshiaki Sudo ,  Eriko Suzuki ,  Hiroshi Kishi ,  Takeshi Fujita

IPC分类号： C25B11/12 ,  C03B19/09 ,  C25B11/04 ,  C04B35/52

CPC分类号： C25B11/12 ,  C03B19/09 ,  C03B19/095 ,  C04B35/52 ,  C25B11/0405 ,  Y02P40/57

摘要： There are provided an apparatus and a method for manufacturing a vitreous silica crucible which can prevent the deterioration of the inner surface property in the manufacturing process of a vitreous silica crucible. The apparatus includes a mold defining an outer shape of a vitreous silica crucible, and an arc discharge unit having electrodes and a power-supply unit, wherein each of the electrodes includes a tip end directed to the mold, the other end opposite to the tip end, and a bent portion provided between the tip end and the other end.

摘要翻译： 提供了一种可以防止在石英玻璃坩埚的制造过程中内表面特性劣化的石英玻璃坩埚的制造装置和方法。 该装置包括限定二氧化硅玻璃坩埚的外形的模具和具有电极和电源单元的电弧放电单元，其中每个电极包括指向模具的尖端，与尖端相对的另一端 端部和设置在前端和另一端之间的弯曲部分。

公开(公告)号：US20120160159A1

公开(公告)日：2012-06-28

申请号：US13394284

申请日：2010-08-10

申请人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

发明人： Toshiaki Sudo ,  Makiko Kodama ,  Minoru Kanda ,  Hiroshi Kishi

IPC分类号： C30B15/10 ,  C03B20/00

CPC分类号： C03B19/095 ,  C30B15/10 ,  C30B29/06 ,  C30B29/18 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

摘要： The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

摘要翻译： 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚，以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1，第一不透明玻璃状石英部11a的比重为1.4〜1.8，小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽，并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

公开(公告)号：US20120141622A1

公开(公告)日：2012-06-07

申请号：US13308308

申请日：2011-11-30

申请人： Toshiaki Sudo ,  Hiroshi Kishi ,  Takeshi Fujita ,  Minoru Kanda

发明人： Toshiaki Sudo ,  Hiroshi Kishi ,  Takeshi Fujita ,  Minoru Kanda

IPC分类号： B29C35/02

CPC分类号： C03B19/095

摘要： Provided is an apparatus for manufacturing a vitreous silica crucible which has a structure which can reduce gaps between a partition wall and electrodes inserted into through-holes formed in the partition wall while enabling electrodes to move to adjust a heating temperature of arc discharge. A plate-shaped partition wall 15 is placed above the rotating mold 10. Electrodes 13 for heating and fusing are inserted into through-holes 16 penetrating in a thickness direction, and are directed toward the rotating mold 10. A rocking unit 40 is provided on an upper side of the partition wall 15 and rocks the electrodes 13 around virtual rocking axes P, and the virtual rocking axes P pass through the through-holes 16.

摘要翻译： 本发明提供一种制造石英玻璃坩埚的装置，其具有能够减少分隔壁与插入形成在隔壁中的通孔的电极之间的间隙的结构，同时使电极移动以调节电弧放电的加热温度。 板状分隔壁15被放置在旋转模具10的上方。用于加热和熔合的电极13被插入穿透厚度方向的通孔16中，并被引导到旋转模具10上。摆动单元40设置在 分隔壁15的上侧并围绕虚拟摇摆轴线P围绕电极13，并且虚拟摇摆轴线P穿过通孔16。

公开(公告)号：US20120125257A1

公开(公告)日：2012-05-24

申请号：US13148463

申请日：2010-12-13

申请人： Toshiaki Sudo ,  Hiroshi Kishi

发明人： Toshiaki Sudo ,  Hiroshi Kishi

IPC分类号： C30B15/10

CPC分类号： C30B15/10 ,  C03B19/095 ,  C30B35/002 ,  Y02P40/57 ,  Y10T117/1032

摘要： Provided is a vitreous silica crucible having a reference point, which is capable of accurately detecting the location of a defect in the vitreous silica crucible used for pulling silicon single crystal, determining a defect generating site of silicon single crystal, and investigating the cause of the defect. The reference point used for specifying the position relationship with respect to a particular part is formed in at least one site of an end portion, an inner wall and an outer wall of the crucible.

摘要翻译： 本发明提供一种具有参考点的氧化硅玻璃坩埚，其能够精确地检测用于拉拔单晶硅的玻璃状石英坩埚中的缺陷的位置，确定单晶硅的缺陷产生位置，并调查其原因 缺陷。 用于指定相对于特定部件的位置关系的参考点形成在坩埚的端部，内壁和外壁的至少一个位置中。

公开(公告)号：US20100236473A1

公开(公告)日：2010-09-23

申请号：US12303147

申请日：2008-09-29

申请人： Hiroshi Kishi

发明人： Hiroshi Kishi

IPC分类号： C30B15/10 ,  C03C10/00

CPC分类号： C30B15/10 ,  C03C3/06 ,  C03C19/00 ,  C03C2201/80 ,  C03C2203/10 ,  C03C2204/08 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032

摘要： In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 μm, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm.

摘要翻译： 为了提供即使在高温下使用结晶促进剂也难以变形的石英玻璃坩埚，容易制造，提供了一种用于拉拔单晶硅的玻璃状石英坩埚，其中外表面 层由含气泡的玻璃状二氧化硅层形成，内表面层由气泡对肉眼不可见的玻璃状二氧化硅层形成，外表面层的表面包含未熔融或半熔融的二氧化硅层（缩写为 作为半熔融二氧化硅层），半熔融二氧化硅层的中心线平均粗糙度（Ra）优选为50〜200μm，半熔融二氧化硅层的厚度为0.5〜2.0mm。

公开(公告)号：US20100170298A1

公开(公告)日：2010-07-08

申请号：US12684178

申请日：2010-01-08

申请人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

发明人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

IPC分类号： C03B19/06

CPC分类号： C03B19/095 ,  H05B7/085

摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.

摘要翻译： 玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径 基端的R1设定在0.6〜0.8的范围内。 每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。 当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

公开(公告)号：US20100162943A1

公开(公告)日：2010-07-01

申请号：US12494008

申请日：2009-06-29

申请人： Hiroshi Kishi

发明人： Hiroshi Kishi

IPC分类号： C30B15/10

CPC分类号： C30B15/10 ,  C30B11/002 ,  C30B13/14 ,  C30B35/002 ,  Y10T117/1032

摘要： In a silica glass crucible used for pulling a silicon crystal, a circumferential maximum tolerance of each of bubble content, wall thickness and transmission as measured over a full circumference of the crucible at a same height position is not more than 6%.

摘要翻译： 在用于拉取硅晶体的二氧化硅玻璃坩埚中，在同一高度位置上在坩埚的全周测量的每个气泡含量，壁厚和透射率的周向最大公差不大于6％。

公开(公告)号：US20100126407A1

公开(公告)日：2010-05-27

申请号：US12694661

申请日：2010-01-27

申请人： Hiroshi Kishi ,  Masanori Fukui

发明人： Hiroshi Kishi ,  Masanori Fukui

IPC分类号： C30B15/30

CPC分类号： C30B29/06 ,  C03C3/06 ,  C30B15/10 ,  C30B35/002 ,  Y10T117/1024

摘要： A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm.

摘要翻译： 一种用于拉拔单晶硅的石英玻璃坩埚，其包括圆柱形直体部分，底部和位于直体部分和底部之间的弯曲部分，其中弯曲的内壁表面的曲率半径 部分是100到240毫米。 弯曲部的壁厚W的变化优选为0.1〜1.4mm / cm。

公开(公告)号：US20080278442A1

公开(公告)日：2008-11-13

申请号：US12155220

申请日：2008-05-30

申请人： Hiroshi Kishi ,  Hiroshi Yamauchi ,  Noritada Yoshitsugu

发明人： Hiroshi Kishi ,  Hiroshi Yamauchi ,  Noritada Yoshitsugu

IPC分类号： G09G5/00

CPC分类号： G01C21/3664 ,  G09B29/106

摘要： A control apparatus for input screens includes a display unit, a switch portion and a control unit including a microcomputer. If one of a menu switch of the switch portion and a plurality of dummy switches included in a screen displayed by the display unit is operated, the microcomputer causes the display unit to display a new screen including a plurality of dummy switches. The microcomputer estimates a time period required for the operator to watch a screen to operate the dummy switch, depending on the displayed screen (the number of dummy switches). If the sum of estimated time periods exceeds a reference time period, the microcomputer nullifies operation of the dummy switch to prevent the screen from being switched. After the lapse of a predetermined time period, the microcomputer cancels the nullification of the operation of the dummy switch.

公开(公告)号：US06614644B2

公开(公告)日：2003-09-02

申请号：US09785064

申请日：2001-02-15

申请人： Hirokazu Chazono ,  Hisamitsu Shizuno ,  Hiroshi Kishi

发明人： Hirokazu Chazono ,  Hisamitsu Shizuno ,  Hiroshi Kishi

IPC分类号： H01G406

CPC分类号： H01G4/1209

摘要： A multilayer ceramic capacitor includes sintered laminated bodies having a plurality of dielectric layers alternately stacked with a multiplicity of internal electrodes, and a pair of external electrodes electrically coupled to the internal electrodes. The dielectric layer is of sintered ceramic grains. The ceramic grains include a core portion surrounded by a shell portion or a solid solution. The ceramic grains contain additive elements such as acceptor elements and/or rare earth elements. The additive elements are non-uniformly distributed in the core and/or shell portion of the ceramic grain or in the solid solution. Such non-uniform distribution of the additive elements in ceramic grains promotes or facilitates the re-oxidation process of the ceramic grains and also increases electrical resistance thereof. Accordingly, the operating life characteristics of the multilayer ceramic capacitors, especially those incorporating therein thin dielectric layers, can be improved. As a result, the thickness of dielectric layers can be further reduced and a greater number of dielectric layers can be used in forming multilayer ceramic capacitors, enabling miniaturization and large capacitance thereof to be achieved.

摘要翻译： 多层陶瓷电容器包括具有交替层叠有多个内部电极的多个电介质层和电连接到内部电极的一对外部电极的烧结层叠体。 电介质层是烧结陶瓷晶粒。 陶瓷颗粒包括由壳部分或固溶体包围的芯部分。 陶瓷颗粒含有添加元素，例如受主元素和/或稀土元素。 添加剂元素不均匀地分布在陶瓷颗粒的芯部和/或壳部分或固体溶液中。 添加元素在陶瓷颗粒中的这种不均匀分布促进或促进了陶瓷颗粒的再氧化过程，并且还增加了其电阻。 因此，可以提高多层陶瓷电容器的使用寿命特性，特别是那些结合有薄介电层的陶瓷电容器。 结果，可以进一步减小电介质层的厚度，并且可以在形成多层陶瓷电容器中使用更多数量的电介质层，从而实现小型化和大的电容。