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    Vitreous silica crucible for pulling silicon single crystal
    1.
    发明授权
    Vitreous silica crucible for pulling silicon single crystal 有权
    硅玻璃坩埚用于拉硅单晶

    公开(公告)号：US08715415B2

    公开(公告)日：2014-05-06

    申请号：US12752374

    申请日：2010-04-01

    申请人： Makiko Kodama ,  Hiroshi Kishi ,  Minoru Kanda

    发明人： Makiko Kodama ,  Hiroshi Kishi ,  Minoru Kanda

    IPC分类号： C30B15/10

    CPC分类号： C30B15/10 ,  C30B29/06 ,  C30B35/002

    摘要： Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 μm is 10% or more and less than 30%, the content of bubbles having a diameter of 40 μm or more and less than 90 μm is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 μm is 10% or more and less than 30%. Relatively small bubbles contained in the opaque vitreous silica layer(11) contribute to the thermal conductivity of a crucible at an initial pulling stage, and relatively large bubbles contained in the opaque vitreous silica layer are expanded through a long-term pulling process to thereby largely contribute to the warmth retaining property of the crucible at a later pulling stage.

    摘要翻译： 本发明提供一种用于拉伸硅单晶的石英玻璃坩埚，其可以在短时间内熔化硅原料，并且通过不透明氧化硅玻璃层的时间变化提高硅单晶的产率。 石英玻璃坩埚包括设置在其外表面并且包含多个气泡的不透明玻璃状石英层（11），以及设置在内表面上且基本上不含有气泡的透明玻璃状石英层（12）。 不透明玻璃状石英层（11）具有气泡直径分布，其中直径小于40μm的气泡的含量为10％以上且小于30％，气泡的直径为40μm以上 小于90μm的是40％以上且小于80％，直径等于或大于90μm的气泡的含量为10％以上且小于30％。 包含在不透明玻璃状二氧化硅层（11）中的相对小的气泡有助于在初始拉伸阶段的坩埚的导热性，并且通过长期拉伸工艺使包含在不透明玻璃状二氧化硅层中的相对大的气泡膨胀，从而大大地扩大 有助于在稍后的拉动阶段坩埚的保温性能。

    Silica glass crucible
    4.
    发明授权
    Silica glass crucible 有权
    二氧化硅玻璃坩埚

    公开(公告)号：US08449676B2

    公开(公告)日：2013-05-28

    申请号：US12430311

    申请日：2009-04-27

    申请人： Masanori Fukui ,  Hiroshi Kishi

    发明人： Masanori Fukui ,  Hiroshi Kishi

    IPC分类号： C30B35/00 ,  C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B15/10 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052

    摘要： A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer.

    摘要翻译： 具有侧壁部和底部的石英玻璃坩埚具有至少在侧壁部中构成内层的第一合成石英玻璃层，至少在包括中心的区域中构成内层的第二合成石英玻璃层 和在侧壁部和底部构成外层的天然石英玻璃层。 第二合成石英玻璃层相对于硅熔体的熔融率高于第一合成石英玻璃层的熔融速度。 第二合成石英玻璃层的铝浓度高于第一合成石英玻璃层的铝浓度。

    Vitreous silica crucible manufacturing apparatus
    5.
    发明授权
    Vitreous silica crucible manufacturing apparatus 有权
    硅玻璃坩埚制造设备

    公开(公告)号：US08240169B2

    公开(公告)日：2012-08-14

    申请号：US12684178

    申请日：2010-01-08

    申请人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

    发明人： Masanori Fukui ,  Hiroshi Kishi ,  Masaki Morikawa

    IPC分类号： C03B19/06 ,  H05B7/22

    CPC分类号： C03B19/095 ,  H05B7/085

    摘要： A vitreous silica crucible manufacturing apparatus includes a plurality of carbon electrodes configured to heat and melt raw material powder by arc discharge, and a value of a ratio R2/R1 of a diameter R2 of a front end of each of the carbon electrodes to a diameter R1 of a base end is set in a range of 0.6 to 0.8. Each carbon electrode has a diameter reduction portion formed at a front end position and reduced in diameter from a diameter R3 of a base end side to the diameter R2 of the front end. When a length of the diameter reduction portion is L1, the diameter of the front end is R2, the diameter of the base end is R1, an angle between the axis lines of the carbon electrodes is θ1, and X=(R1−R2)/2, a value of L1−(X/tan(θ1/2)) is set in a range of 50 to 150 mm.

    摘要翻译： 玻璃状石英玻璃坩埚的制造装置具有多个碳电极，其通过电弧放电来加热和熔化原料粉末，并且每个碳电极的前端的直径R2的比R2 / R1的值与直径 基端的R1设定在0.6〜0.8的范围内。 每个碳电极具有形成在前端位置并且从基端侧的直径R3到前端的直径R2的直径减小的直径减小部分。 当直径减小部分的长度为L1时，前端的直径为R2，基端的直径为R1，碳电极的轴线之间的角度为1; X =（R1- R2）/ 2，将L1-（X / tan（＆amp; 1/2））的值设定在50〜150mm的范围内。

    VITREOUS SILICA CRUCIBLE
    7.
    发明申请
    VITREOUS SILICA CRUCIBLE 有权
    紫外线可溶性

    公开(公告)号：US20120132133A1

    公开(公告)日：2012-05-31

    申请号：US13307253

    申请日：2011-11-30

    申请人： Toshiaki SUDO ,  Hiroshi KISHI ,  Eriko SUZUKI

    发明人： Toshiaki SUDO ,  Hiroshi KISHI ,  Eriko SUZUKI

    IPC分类号： C30B15/10

    CPC分类号： C30B15/10 ,  C03B19/095 ,  Y10T117/1032

    摘要： The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm−1 and 606 cm−1, respectively, in Raman spectrum of vitreous silica of the region having a thickness of 2 mm from an outer surface to an inner surface of a wall of the crucible.

    摘要翻译： 本发明提供了一种可以抑制坩埚的翘曲和侧壁降低的氧化硅玻璃坩埚，而不用担心杂质混入硅熔体中。 根据本发明，提供一种用于拉制硅单晶的玻璃状石英坩埚，其中I2 / I1比为0.67-1.17，其中I1和I2是在492cm-1和606cm-1处的峰的面积强度 分别具有从坩埚的壁的外表面到内表面的厚度为2mm的区域的玻璃态二氧化硅的拉曼光谱。

    Vitreous silica crucible for pulling single-crystal silicon
    8.
    发明授权
    Vitreous silica crucible for pulling single-crystal silicon 有权
    用于拉拔单晶硅的玻璃状硅石坩埚

    公开(公告)号：US08142565B2

    公开(公告)日：2012-03-27

    申请号：US12325033

    申请日：2008-11-28

    申请人： Hiroshi Kishi ,  Minoru Kanda

    发明人： Hiroshi Kishi ,  Minoru Kanda

    IPC分类号： C30B15/10 ,  C30B15/00

    CPC分类号： C30B15/10 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1024 ,  Y10T117/1032 ,  Y10T117/1052

    摘要： A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range.

    摘要翻译： 一种玻璃状石英玻璃坩埚，其用于拉拔由玻璃状二氧化硅形成的具有有底圆筒形状的单晶硅，其中，在坩埚内表面的液面移动范围内，从对应于液面的位置 在完成拉伸单晶硅时，将单晶硅拉出到对应于硅熔体的液面的位置时的硅熔体的水平，包括OH基的浓度 坩埚的内表面的侵蚀厚度部分的玻璃态二氧化硅的含量高于低于位于液面移动范围以下的液面的范围。

    Driving device
    9.
    发明授权
    Driving device 失效
    驱动装置

    公开(公告)号：US07656073B2

    公开(公告)日：2010-02-02

    申请号：US11271676

    申请日：2005-11-10

    申请人： Yutaka Doshida ,  Hiroshi Kishi ,  Masafumi Tsukada ,  Katsuei Ishida

    发明人： Yutaka Doshida ,  Hiroshi Kishi ,  Masafumi Tsukada ,  Katsuei Ishida

    IPC分类号： H01L41/08

    CPC分类号： H02N2/025 ,  G02B3/12 ,  G02B3/14 ,  H01L41/0973

    摘要： A driving device, small in size and light in weight, is to stabilize the position of a surface-deforming element while reducing the effect of gravity thus enabling stable transfer and positioning. The driving device is structured to hold a movable member integrated with a piezoelectric vibrator and a lens by a shaft provided at a tip of a spring extended from an inner surface to center of a passageway. The shaft extends through an opening formed in a protrusion of the movable member. By a tensile force of the spring, the movable member at its outer periphery is pulled radially and held. When applying a voltage with a waveform changing sharply to the piezoelectric vibrator, the movable member flexes maximally upward or downward to have a reduced diameter and an increasing acceleration thereby making a movement. Then, when a frictional force increases, the protrusion is held at a point where the movable member moves. Because of being held by a tensile force, the effect of gravity decreases and hence the movable member is stabilized in position relative to a direction of transfer.

    摘要翻译： 体积小，重量轻的驱动装置是为了稳定表面变形元件的位置，同时减少重力的影响，从而实现稳定的转移和定位。 驱动装置构造成通过设置在从通道的内表面到中心延伸的弹簧的尖端处的轴来保持与压电振动器和透镜一体化的可移动部件。 轴穿过形成在可动构件的突起中的开口。 通过弹簧的张力，可动件在其外周被径向拉伸并保持。 当施加具有波形变化的电压到压电振动器时，可动构件最大程度地向上或向下弯曲以具有减小的直径和增加的加速度，从而进行移动。 然后，当摩擦力增加时，突起被保持在可移动部件移动的点。 由于被张力保持，重力的作用减小，因此可动构件相对于传送方向稳定在适当位置。

    SILICA GLASS CRUCIBLE AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL USING THE SAME
    10.
    发明申请
    SILICA GLASS CRUCIBLE AND METHOD FOR PULLING UP SILICON SINGLE CRYSTAL USING THE SAME 有权
    二氧化硅玻璃巧克力和方法，用于拉丝硅单晶

    公开(公告)号：US20100006022A1

    公开(公告)日：2010-01-14

    申请号：US12169828

    申请日：2008-07-09

    申请人： Hiroshi KISHI ,  Minoru KANDA

    发明人： Hiroshi KISHI ,  Minoru KANDA

    IPC分类号： C30B15/10

    CPC分类号： C30B15/10 ,  C30B29/06 ,  Y10T117/1032

    摘要： A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm2.

    摘要翻译： 通过使用二氧化硅将硅坩埚内表面的溶解速度抑制到20mum / hr以下的方法，通过进行硅单晶的拉拔来防止针孔的方法来提供硅单晶中的针孔少的石英玻璃坩埚 用于提取硅单晶的玻璃坩埚，其中由无定形二氧化硅结晶形成的结晶二氧化硅的面积限制在坩埚内表面积的10％以下，或坩埚内部由开放气泡形成的凹坑的密度 表面限制在0.01〜0.2个/ mm2。