公开(公告)号：US11342243B2

公开(公告)日：2022-05-24

申请号：US16141734

申请日：2018-09-25

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel Elsherbini ,  Johanna Swan

IPC: H01L23/473 ,  H01L23/538 ,  H01L23/427 ,  H01L21/48 ,  H01L23/22

Abstract: An integrated circuit structure may be formed having a substrate, at least one integrated circuit device embedded in and electrically attached to the substrate, and a heat transfer fluid conduit extending through the substrate. In one embodiment, the heat transfer fluid conduit may be lined with a metallization within the substrate. In a further embodiment, the heat transfer fluid conduit may comprise multiple fluid channels for the removal of heat from multiple surfaces of the at least one integrated circuit device. In still a further embodiment, the substrate may include a molded layer, wherein at least one fluid channel is formed in the molded layer.

公开(公告)号：US11309619B2

公开(公告)日：2022-04-19

申请号：US16327811

申请日：2016-09-23

Applicant: INTEL CORPORATION

Inventor： Sasha Oster ,  Georgios Dogiamis ,  Telesphor Kamgaing ,  Adel Elsherbini ,  Shawna Liff ,  Aleksandar Aleksov ,  Johanna Swan

IPC: H01L23/66 ,  H01Q1/22 ,  H01Q21/06 ,  H01Q21/00 ,  H01P5/18

Abstract: A waveguide coupling system may include at least one waveguide member retention structure disposed on an exterior surface of a semiconductor package. The waveguide member retention structure may be disposed a defined distance or at a defined location with respect to an antenna carried by the semiconductor package. The waveguide member retention structure may engage and guide a waveguide member slidably inserted into the respective waveguide member retention structure. The waveguide member retention structure may position the waveguide member at a defined location with respect to the antenna to maximize the power transfer from the antenna to the waveguide member.

公开(公告)号：US11226162B2

公开(公告)日：2022-01-18

申请号：US15957431

申请日：2018-04-19

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel Elsherbini ,  Johanna Swan

IPC: H05K7/20 ,  F28F3/02 ,  F28F13/00 ,  H01L23/373 ,  H01L23/367

Abstract: A heat dissipation device may be formed having at least one isotropic thermally conductive section (uniformly high thermal conductivity in all directions) and at least one anisotropic thermally conductive section (high thermal conductivity in at least one direction and low thermal conductivity in at least one other direction). The heat dissipation device may be thermally coupled to a plurality of integrated circuit devices such that at least a portion of the isotropic thermally conductive section(s) and/or the anisotropic thermally conductive section(s) is positioned over at least one integrated circuit device. The isotropic thermally conductive section(s) allows heat spreading/removal from hotspots or areas with high-power density and the anisotropic thermally conductive section(s) transfers heat away from the at least one integrated circuit device predominately in a single direction with minimum conduction resistance in areas with uniform power density distribution, while reducing heat transfer in the other directions, thereby reducing thermal cross-talk.

公开(公告)号：US20210358855A1

公开(公告)日：2021-11-18

申请号：US17388964

申请日：2021-07-29

Applicant: Intel Corporation

Inventor： Veronica Strong ,  Aleksandar Aleksov ,  Henning Braunisch ,  Brandon Rawlings ,  Johanna Swan ,  Shawna Liff

IPC: H01L23/538 ,  H05K1/18 ,  H01L23/00 ,  H01L25/10 ,  H01L21/56 ,  H01L21/48

Abstract: An integrated circuit package may be formed including at least one die side integrated circuit device having an active surface electrically attached to an electronic interposer, wherein the at least one die side integrated circuit device is at least partially encased in a mold material layer and wherein a back surface of the at least one die side integrated circuit device is in substantially the same plane as an outer surface of the mold material layer. At least one stacked integrated circuit device may be electrically attached to the back surface of the at least one die side integrated circuit through an interconnection structure formed between the at least one die side integrated circuit device and the at least one stacked integrated circuit device.

公开(公告)号：US20210280492A1

公开(公告)日：2021-09-09

申请号：US17318887

申请日：2021-05-12

Applicant: Intel Corporation

Inventor： Shawna Liff ,  Adel Elsherbini ,  Johanna Swan ,  Jimin Yao ,  Veronica Strong

IPC: H01L23/373 ,  H01L21/768 ,  H01L25/065 ,  H01L23/48

Abstract: A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

公开(公告)号：US11101205B2

公开(公告)日：2021-08-24

申请号：US16564168

申请日：2019-09-09

Applicant: Intel Corporation

Inventor： Johanna Swan ,  Henning Braunisch ,  Aleksandar Aleksov ,  Shawna Liff ,  Brandon Rawlings ,  Veronica Strong

IPC: H01L23/498 ,  G03F1/38 ,  G03F1/54 ,  G03F1/68

Abstract: An lithographic reticle may be formed comprising a transparent substrate, a substantially opaque mask formed on the transparent substrate that defines at least one exposure window, wherein the at least one exposure window has a first end, a first filter formed on the transparent substrate within the at least one exposure window and abutting the first end thereof, and a second filter formed on the transparent substrate within the at least one exposure window and abutting the first filter, wherein an average transmissivity of the first filter is substantially one half of a transmissivity of the second filter. In another embodiment, the at least one exposure window includes a third filter abutting the second end and is adjacent the second filter. Further embodiments of the present description include interconnection structures and systems fabricated using the lithographic reticle.

公开(公告)号：US20210159179A1

公开(公告)日：2021-05-27

申请号：US16698557

申请日：2019-11-27

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Shawna Liff ,  Johanna Swan ,  Gerald Pasdast

IPC: H01L23/538 ,  H01L21/304 ,  H01L21/48 ,  H01L23/00

Abstract: Techniques and mechanisms for high interconnect density communication with an interposer. In some embodiments, an interposer comprises a substrate and portions disposed thereon, wherein respective inorganic dielectrics of said portions adjoin each other at a material interface, which extends to each of the substrate and a first side of the interposer. A first hardware interface of the interposer spans the material interface at the first side, wherein a first one of said portions comprises first interconnects which couple the first hardware interface to a second hardware interface at the first side. A second one of said portions includes second interconnects which couple one of first hardware interface or the second hardware interface to a third hardware interface at another side of the interposer. In another embodiment, a metallization pitch feature of the first hardware interface is smaller than a corresponding metallization pitch feature of the second hardware interface.

公开(公告)号：US10998272B2

公开(公告)日：2021-05-04

申请号：US16573943

申请日：2019-09-17

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Henning Braunisch ,  Shawna Liff ,  Brandon Rawlings ,  Veronica Strong ,  Johanna Swan

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/498

Abstract: An electronic interposer may be formed using organic material layers, while allowing for the fabrication of high density interconnects within the electronic interposer without the use of embedded silicon bridges. This is achieved by forming the electronic interposer in three sections, i.e. an upper section, a lower section and a middle section. The middle section may be formed between the upper section and the lower section, wherein a thickness of each layer of the middle section is thinner than a thickness of any of the layers of the upper section and the lower section, and wherein conductive routes within the middle section have a higher density than conductive routes within the upper section and the lower section.

公开(公告)号：US20210098407A1

公开(公告)日：2021-04-01

申请号：US16586158

申请日：2019-09-27

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Patrick Morrow ,  Johanna Swan ,  Shawna Liff ,  Mauro Kobrinksy ,  Van Le ,  Gerald Pasdast

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/528 ,  H01L23/522 ,  H01L25/18 ,  H01L25/00 ,  H01L21/768 ,  H01L21/82

Abstract: A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.

公开(公告)号：US10721568B2

公开(公告)日：2020-07-21

申请号：US16096568

申请日：2016-07-01

Applicant: Intel Corporation

Inventor： Georgios C. Dogiamis ,  Feras Eid ,  Adel A. Elsherbini ,  Johanna Swan ,  Shawna M. Liff ,  Thomas L. Sounart ,  Sasha N. Oster

IPC: H04R17/00 ,  B06B1/06

Abstract: Embodiments of the invention include an acoustic transducer device having a base structure that is positioned in proximity to a cavity of an organic substrate, a piezoelectric material in contact with a first electrode of the base structure, and a second electrode in contact with the piezoelectric material. In one example, for a transmit mode, a voltage signal is applied between the first and second electrodes and this causes a stress in the piezoelectric material which causes a stack that is formed with the first electrode, the piezoelectric material, and the second electrode to vibrate and hence the base structure to vibrate and generate acoustic waves.