公开(公告)号：US20250112218A1

公开(公告)日：2025-04-03

申请号：US18478831

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Brandon M. Rawlings ,  Adel Elsherbini ,  Thomas L. Sounart ,  Feras Eid ,  Tushar Kanti Talukdar ,  Kimin Jun ,  Johanna Swan ,  Richard F. Vreeland

IPC: H01L25/00 ,  H01L21/683 ,  H01L25/075

Abstract: In one embodiment, a selective layer transfer process includes forming a layer of integrated circuit (IC) components on a first substrate, forming first bonding structures on a second substrate, and partially bonding the first substrate to the second substrate, which includes bonding a first subset of IC components on the first substrate to respective bonding structures on the second substrate. The process also includes forming second bonding structures on a third substrate, where the second bonding structures are arranged in a layout that is offset from the layout of the second substrate. The process further includes partially bonding the first substrate to the third substrate, which includes bonding a second subset of IC components on the first substrate to respective bonding structures on the third substrate.

公开(公告)号：US20250112127A1

公开(公告)日：2025-04-03

申请号：US18374573

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Kimin Jun ,  Feras Eid ,  Adel Elsherbini ,  Veronica Strong ,  Thomas Sounart

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/498 ,  H01L23/528

Abstract: A surface finish on an integrated circuit (IC) die structure or a substrate structure to which an IC die structure is to be bonded has a chemical composition distinct from that of underlying metallization. The surface finish may comprise a Cu—Ni alloy. Optionally, the Cu—Ni alloy may further comprise Mn. Alternatively, the surface finish may comprise a noble metal, such as Pd, Pt, or Ru or may comprise self-assembled monolayer (SAM) molecules comprising Si and C. During the bonding process a biphilic surface on the IC die structure or substrate structure may facilitate liquid droplet-based fine alignment of the IC die structure to a host structure. Prior to bonding, the surface finish may be applied upon a top surface of metallization features and may inhibit oxidation of the top surface exposed to the liquid droplet.

公开(公告)号：US12242290B2

公开(公告)日：2025-03-04

申请号：US17484286

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Beomseok Choi ,  William J. Lambert ,  Krishna Bharath ,  Kaladhar Radhakrishnan ,  Adel Elsherbini ,  Henning Braunisch ,  Stephen Morein ,  Aleksandar Aleksov ,  Feras Eid

IPC: G05F1/44 ,  H01L23/50 ,  H01L25/065

Abstract: In one embodiment, an apparatus includes a first die with voltage regulator circuitry and a second die with logic circuitry. The apparatus further includes an inductor, a capacitor, and a conformal power delivery structure on the top side of the apparatus, where the voltage regulator circuitry is connected to the logic circuitry through the inductor, the capacitor, and the conformal power delivery structure. The conformal power delivery structure includes a first electrically conductive layer defining one or more recesses, a second electrically conductive layer at least partially within the recesses of the first electrically conductive layer and having a lower surface that generally conforms with the upper surface of the first electrically conductive layer, and a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another.

公开(公告)号：US12142543B2

公开(公告)日：2024-11-12

申请号：US18092140

申请日：2022-12-30

Applicant: INTEL CORPORATION

Inventor： Johanna Swan ,  Feras Eid ,  Adel Elsherbini

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/00 ,  H01L23/42 ,  H01L23/498

Abstract: An integrated circuit structure may be formed having a substrate, at least one integrated circuit device embedded in and electrically attached to the substrate, and a heat dissipation device in thermal contact with the integrated circuit device, wherein a first portion of the heat dissipation device extends into the substrate and wherein a second portion of the heat dissipation device extends over the substrate. In one embodiment, the heat dissipation device may comprise the first portion of the heat dissipation device formed from metallization within the substrate.

公开(公告)号：US11990419B2

公开(公告)日：2024-05-21

申请号：US16905202

申请日：2020-06-18

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Feras Eid ,  Adel Elsherbini ,  David Johnston ,  Jyothi Bhaskarr Velamala ,  Rachael Parker

IPC: H01L23/544 ,  H01L23/00 ,  H01L23/498 ,  H04L9/32

CPC classification number: H01L23/544 ,  H01L23/49838 ,  H01L24/73 ,  H04L9/3278 ,  H01L2223/54413 ,  H01L2224/73204

Abstract: Techniques and mechanisms for providing physically unclonable function (PUF) circuitry at a substrate which supports coupling to an integrated circuit (IC) chip. In an embodiment, the substrate comprises an array of electrodes which extend in a level of metallization at a side of the insulator layer. A cap layer, disposed on the array, is in contact with the electrodes and with a portion of the insulator layer which is between the electrodes. A material of the cap layer has a different composition or microstructure than the metallization. Regions of the cap layer variously provide respective impedances each between a corresponding two electrodes. In other embodiments, the substrate includes (or couples to) integrated circuitry that is operable to determine security information based on the detection of one or more such impedances.

公开(公告)号：US20240063147A1

公开(公告)日：2024-02-22

申请号：US17891704

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Mohammad Enamul Kabir ,  Johanna Swan ,  Omkar Karhade ,  Kimin Jun ,  Feras Eid ,  Shawna Liff ,  Xavier Brun ,  Bhaskar Jyoti Krishnatreya ,  Tushar Talukdar ,  Haris Khan Niazi

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/56 ,  H01L23/31 ,  H01L23/29

CPC classification number: H01L23/564 ,  H01L24/08 ,  H01L24/24 ,  H01L25/0652 ,  H01L24/19 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/291 ,  H01L2224/08145 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2924/37001 ,  H01L2224/24145 ,  H01L24/73 ,  H01L2224/73259 ,  H01L2224/24225 ,  H01L2224/73209 ,  H01L2224/2499

Abstract: Techniques and mechanisms to mitigate corrosion to via structures of a composite chiplet. In an embodiment, a composite chiplet comprises multiple integrated circuit (IC) components which are each in a different respective one of multiple levels. One or more conductive vias extend through an insulator layer in a first level of the multiple levels. An annular structure of the composite chiplet extends vertically through the insulator layer, and surrounds the one or more conductive vias in the insulator layer. The annular structure mitigates an exposure of the one or more conductive vias to moisture which is in a region of the insulator layer that is not surrounded by the annular structure. In another embodiment, the annular structure further surrounds an IC component which extends in the insulator layer.

公开(公告)号：US20240063076A1

公开(公告)日：2024-02-22

申请号：US17891727

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Mohammad Enamul Kabir ,  Bhaskar Jyoti Krishnatreya ,  Kimin Jun ,  Adel Elsherbini ,  Tushar Talukdar ,  Feras Eid ,  Debendra Mallik ,  Krishna Vasanth Valavala ,  Xavier Brun

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/373 ,  H01L23/48 ,  H01L25/065

CPC classification number: H01L23/367 ,  H01L24/08 ,  H01L23/3736 ,  H01L23/373 ,  H01L23/3732 ,  H01L23/481 ,  H01L24/32 ,  H01L24/29 ,  H01L25/0657 ,  H01L2224/08145 ,  H01L2224/32225 ,  H01L2224/29147 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29193 ,  H01L2224/29186

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more integrated circuit dies bonded to a base die, a conformal thermal heat spreading layer on the top and sidewalls of the integrated circuit dies, and an inorganic dielectric material on a portion of the conformal thermal heat spreading layer, laterally adjacent the integrated circuit dies, and over the base die. The conformal thermal heat spreading layer includes a high thermal conductivity material to provide a thermal pathway for the integrated circuit dies during operation.

公开(公告)号：US20230098957A1

公开(公告)日：2023-03-30

申请号：US17485235

申请日：2021-09-24

Applicant: INTEL CORPORATION

Inventor： Feras Eid ,  Aleksandar Aleksov ,  Adel Elsherbini ,  Henning Braunisch

IPC: H01L23/00

Abstract: A conformal power delivery structure, a three-dimensional (3D) stacked die assembly, a system including the 3D stacked die assembly, and a method of forming the conformal power delivery structure. The power delivery structure includes a package substrate, a die adjacent to and electrically coupled to the package substrate; a first power plane adjacent the upper surface of the package substrate and electrically coupled thereto; a second power plane at least partially within recesses defined by the first power plane and having a lower surface that conforms with the upper surface of the first power plane; and a dielectric material between the first power plane and the second power plane.

公开(公告)号：US20230094979A1

公开(公告)日：2023-03-30

申请号：US17484299

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Henning Braunisch ,  Feras Eid ,  Adel Elsherbini ,  Stephen Morein ,  Yoshihiro Tomita ,  Thomas L. Sounart ,  Johanna Swan ,  Brandon M. Rawlings

IPC: H01L23/50 ,  H01L23/532

Abstract: Technologies for conformal power delivery structures near high-speed signal traces are disclosed. In one embodiment, a dielectric layer may be used to keep a power delivery structure spaced apart from high-speed signal traces, preventing deterioration of signals on the high-speed signal traces due to capacitive coupling to the power delivery structure.

公开(公告)号：US11538617B2

公开(公告)日：2022-12-27

申请号：US16024593

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Krishna Bharath ,  Adel Elsherbini

IPC: H01F5/00 ,  H01F27/28 ,  H01F41/04 ,  H01F41/02 ,  H01F27/24

Abstract: A microelectronics package comprising a package core and an inductor over the package core. The inductor comprises a dielectric over the package core. The dielectric comprises a curved surface opposite the package core. At least one conductive trace is adjacent to the package core. The at least one conductive trace is at least partially embedded within the dielectric and extends over the package core. A magnetic core cladding is over the dielectric layer and at least partially surrounding the conductive trace.