公开(公告)号：US20170338815A1

公开(公告)日：2017-11-23

申请号：US15497290

申请日：2017-04-26

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Roman Baburske ,  Thomas Basler

IPC: H03K17/567 ,  H01L29/16 ,  H01L29/417 ,  H01L29/47 ,  H01L29/872 ,  H01L29/861 ,  H01L29/739 ,  H02M7/537 ,  H01L27/07 ,  H02M3/156 ,  H02M5/293 ,  H02M7/217

CPC classification number: H03K17/567 ,  H01L25/072 ,  H01L27/0711 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/417 ,  H01L29/47 ,  H01L29/7392 ,  H01L29/7393 ,  H01L29/8611 ,  H01L29/8613 ,  H01L29/872 ,  H02M3/156 ,  H02M3/158 ,  H02M5/293 ,  H02M7/217 ,  H02M7/219 ,  H02M7/537 ,  H02M7/5387 ,  H02M2001/0051 ,  H03K17/162 ,  H03K2217/0009 ,  Y02B70/1491

Abstract: An electric assembly includes a reverse conducting switching device and a rectifying device. The reverse conducting switching device includes transistor cells for desaturation configured to be, under reverse bias, turned on in a desaturation mode and to be turned off in a saturation mode. The rectifying device is electrically connected anti-parallel to the switching device. In a range of a diode forward current from half of a maximum rating diode current of the switching device to the maximum rating diode current, a diode I/V characteristic of the rectifying device shows a voltage drop across the rectifying device higher than a saturation I/V characteristic of the switching device with the transistor cells for desaturation turned off and lower than a desaturation I/V characteristic of the switching device with the transistor cells for desaturation turned on.

公开(公告)号：US20170117798A1

公开(公告)日：2017-04-27

申请号：US15331548

申请日：2016-10-21

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Roman Baburske ,  Johannes Georg Laven

IPC: H02M1/32 ,  H01L29/872 ,  H01L23/60 ,  H01L29/868 ,  H01L29/739 ,  H01L25/18 ,  H01L29/16 ,  H01L29/06

CPC classification number: H02M1/32 ,  H01L23/60 ,  H01L23/62 ,  H01L25/18 ,  H01L29/0611 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0626 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/36 ,  H01L29/402 ,  H01L29/7393 ,  H01L29/861 ,  H01L29/868 ,  H01L29/872 ,  H01L29/8725 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2924/13055 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H03K17/08148 ,  H03K17/12 ,  H03K17/127 ,  H03K17/74 ,  H01L2924/00014

Abstract: An electric assembly includes a semiconductor switching device with a maximum breakdown voltage rating across two load terminals in an off-state. A clamping diode is electrically connected to the two load terminals and parallel to the switching device. A semiconductor body of the clamping diode is made of silicon carbide. An avalanche voltage of the clamping diode is lower than the maximum breakdown voltage rating of the switching device.