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    Process for forming photoresist pattern by using gas phase amine treatment
    53.
    发明授权
    Process for forming photoresist pattern by using gas phase amine treatment 失效
    通过使用气相胺处理形成光致抗蚀剂图案的方法

    公开(公告)号：US06664031B2

    公开(公告)日：2003-12-16

    申请号：US09852377

    申请日：2001-05-10

    申请人： Jae Chang Jung ,  Cha Won Koh ,  Jin Soo Kim ,  Sung Eun Hong ,  Keun Kyu Kong ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Cha Won Koh ,  Jin Soo Kim ,  Sung Eun Hong ,  Keun Kyu Kong ,  Ki Ho Baik

    IPC分类号： G03F726

    CPC分类号： G03F7/36

    摘要： A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.

    摘要翻译： 公开了一种制备光致抗蚀剂图案的方法。 特别地，所公开的形成光致抗蚀剂图案的方法减少或防止质量差的光致抗蚀剂图案形成，特别是当使用高光吸收（即低透光率）光致抗蚀剂树脂时。 在一个方面，已曝光的光致抗蚀剂膜用气相碱性化合物处理以产生基本垂直的光致抗蚀剂图案。

    Photoresist cross-linker and photoresist composition comprising the same
    54.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06322948B1

    公开(公告)日：2001-11-27

    申请号：US09499231

    申请日：2000-02-07

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0382 ,  Y10S430/128

    摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF (248 nm), ArF (193 nm), E-beam, ion-beam or EUV light sources.

    摘要翻译： 本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。 这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。<化学式1>

    Process for forming a photoresist pattern by top surface imaging process
    55.
    发明授权
    Process for forming a photoresist pattern by top surface imaging process 失效
    通过顶表面成像工艺形成光致抗蚀剂图案的工艺

    公开(公告)号：US06319654B1

    公开(公告)日：2001-11-20

    申请号：US09566290

    申请日：2000-05-05

    申请人： Myoung Soo Kim ,  Jae Chang Jung ,  Hyung Gi Kim ,  Ki Ho Baik

    发明人： Myoung Soo Kim ,  Jae Chang Jung ,  Hyung Gi Kim ,  Ki Ho Baik

    IPC分类号： G03F740

    CPC分类号： G03F7/38 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/265 ,  Y10S430/168

    摘要： The present invention relates to a process for forming a photoresist pattern by employing a silylation process, and particularly to a method for forming a photoresist pattern according to a top surface imaging (TSI) process using a photoresist composition comprising a cross-linker having a cross-linker monomer of the following Chemical Formula 1 or 2. The photoresist composition containing a polymer of the above cross-linker monomer is preferably used in a TSI process which has been optimized by controlling the conditions of each step, such as temperature and time, thereby obtaining an ultrafine pattern that can be more efficiently applied to a 4 G or 16 G DRAM semiconductor fabrication process: wherein, R1, R2, R3, R5, R6, R7, R, m and n are as defined in the specification attached hereto.

    摘要翻译： 本发明涉及一种通过使用甲硅烷化方法形成光致抗蚀剂图案的方法，特别涉及一种使用光致抗蚀剂组合物的顶表面成像（TSI）方法形成光致抗蚀剂图案的方法，所述光致抗蚀剂组合物包含交联剂 含有上述交联剂单体的聚合物的光致抗蚀剂组合物优选用于通过控制各步骤的条件如温度和时间而优化的TSI方法， 从而获得可以更有效地应用于4G或16G DRAM半导体制造工艺的超精细图案：其中，R1，R2，R3，R5，R6，R7，R，m和n如本文所附的说明书中所定义。 。

    Photoresist cross-linker and photoresist composition comprising the same
    56.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06312868B1

    公开(公告)日：2001-11-06

    申请号：US09501096

    申请日：2000-02-09

    申请人： Keun Kyu Kong ,  Jae Chang Jung ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    发明人： Keun Kyu Kong ,  Jae Chang Jung ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/038

    摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources. wherein X1 and X2 individually represent CH2, CH2CH2, O or S; p and s individually represent an integer from 0 to 5; q is 0 or 1; R′ and R″ independently represent hydrogen or methyl; R represents straight or branched C1-10 alkyl, straight or branched C1-10 ether, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ether including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R1 and R2 independently represent hydrogen, straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.

    摘要翻译： 本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。 这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺.X1和X2分别表示CH2，CH2CH2，O或S; p和s各自表示0至5的整数; q为0或1; R'和R“独立地表示氢或甲基; R代表直链或支链C 1-10烷基，直链或支链C1-10醚，直链或支链C1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10醚，包括至少一个羟基的直链或支链C 1-10酯，直链或支链C 1-10酮 包括至少一个羟基，包括至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R 1和R 2独立地表示氢，直链或支链C 1-10烷基，直链或支链C 1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛，直链或 包括至少一个羟基的支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基，直链或支链C 1-10羧酸的直链或支链C 1-10酮包括 至少一个羟基，以及包含至少一个羟基的直链或支链C 1-10缩醛。

    ArF photoresist copolymers
    58.
    发明授权
    ArF photoresist copolymers 有权
    ArF光刻胶共聚物

    公开(公告)号：US06866984B2

    公开(公告)日：2005-03-15

    申请号：US10740962

    申请日：2003-12-18

    申请人： Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

    IPC分类号： C08F232/04 ,  G03F7/039 ,  G03F7/004

    CPC分类号： G03F7/039 ,  C08F232/04

    摘要： A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance, the photoresist has good adhesiveness to the substrate and can be developed in a TMAH solution.

    摘要翻译： 由一种或多种羧基取代的双环烯烃单体制备光致抗蚀剂共聚物，该共聚物用于制备使用深紫外（ArF）作为光源的亚微光刻工艺的光致抗蚀剂。 除了具有高耐蚀刻性和耐热性之外，光致抗蚀剂对基材具有良好的粘附性，并且可以在TMAH溶液中显影。

    Photoresist cross-linker and photoresist composition comprising the same
    59.
    发明授权
    Photoresist cross-linker and photoresist composition comprising the same 失效
    光阻抗交联剂和包含其的光致抗蚀剂组合物

    公开(公告)号：US06482565B1

    公开(公告)日：2002-11-19

    申请号：US09448964

    申请日：1999-11-24

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Myoung Soo Kim ,  Hyoung Gi Kim ,  Hyeong Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： C07D407/12 ,  C07D317/12 ,  C07D319/06

    摘要： The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.

    摘要翻译： 本发明涉及用于光致抗蚀剂的交联剂，其适用于使用KrF（248uR），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。 根据本发明，优选的交联剂包含具有衍生自以下的重复单元的共聚物：（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸的化合物 酸，甲基丙烯酸和马来酸酐。其中R1，R2和R各自表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸， 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酮， 包含至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R3表示氢或甲基; m表示0或1; n表示1〜5的数。

    Photoresist composition containing photo base generator with photo acid generator
    60.
    发明授权
    Photoresist composition containing photo base generator with photo acid generator 失效
    含有光产酸剂的光源组合物的光致抗蚀剂组合物

    公开(公告)号：US06395451B1

    公开(公告)日：2002-05-28

    申请号：US09666932

    申请日：2000-09-21

    申请人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

    发明人： Jae Chang Jung ,  Keun Kyu Kong ,  Jin Soo Kim ,  Ki Ho Baik

    IPC分类号： G03F7004

    CPC分类号： H01L21/02118 ,  G03F7/0045 ,  G03F7/039 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/312 ,  Y10S430/115 ,  Y10S430/12

    摘要： The present invention relates to a photoresist composition containing Photo Base Generator (PBG), more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) photo acid generator, (c) organic solvent and further (d) photo base generator. The photo base generator is preferably selected from benzyloxycarbonyl compound of Chemical Formula 1 or O-acyloxime compound of Chemical Formula 2, which prevents a slopping pattern formation and a severe I/D Bias occurrence. wherein, R′, R1 to R6 are defined in accordance with the Specification.

    摘要翻译： 本发明涉及一种含光致抗蚀剂组合物，更具体地说涉及光致抗蚀剂组合物，该组合物包括（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d） 发电机。 光产生剂优选选自化学式1的苄氧基羰基化合物或化学式2的O-酰氧基肟化合物，其防止形成浆液形成和严重的I / D偏差。其中R'，R 1至R 6定义在 符合规范。