公开(公告)号：US20240038768A1

公开(公告)日：2024-02-01

申请号：US18487263

申请日：2023-10-16

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: An object of the present invention is to provide a technology using which, in a thin film transistor using oxide semiconductor, the resistance of a channel region of the oxide semiconductor is made high, and at the same time the resistances of a source region and a drain region of the oxide semiconductor are made low. There is provided a semiconductor device including: a thin film transistor including oxide semiconductor, the oxide semiconductor including a channel region, a drain region, and a source region; a gate insulating film formed on the channel region; an aluminum oxide film formed on the gate insulating film; and a gate electrode formed on the aluminum oxide film, wherein the aluminum oxide film has a region that covers neither the drain region nor the source region in a plane view.

公开(公告)号：US20230387320A1

公开(公告)日：2023-11-30

申请号：US18447470

申请日：2023-08-10

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: H01L29/786 ,  H01L29/36

CPC classification number: H01L29/7869 ,  H01L29/36

Abstract: A semiconductor device includes a first conductive layer, a first insulating layer on the first conductive layer, an oxide semiconductor layer on the first insulating layer, and second and third conductive layers on the oxide semiconductive layer. The oxide semiconductor layer includes a first region, a second region in contact with the second conductive layer, a third region in contact with the third conductive layer, a first impurity region between the first region and the second region, and a second impurity region between the first region and the third region. The first impurity region is in contact with the second conductive layer. The second impurity region is in contact with the third conductive layer. An electrical conductivity of each of the first impurity region and the second impurity region is greater than an electrical conductivity of each of the second region and the third region.

公开(公告)号：US20220278137A1

公开(公告)日：2022-09-01

申请号：US17747049

申请日：2022-05-18

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20220216281A1

公开(公告)日：2022-07-07

申请号：US17570396

申请日：2022-01-07

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshinari SASAKI ,  Ryo ONODERA

IPC: H01L27/32

Abstract: According to one embodiment, in a first concentration of an impurity element contained in a first impurity region, a second concentration of the impurity element contained in a second impurity region, a third concentration of the impurity element contained in a third impurity region, and a fourth concentration of the impurity element contained in a high-concentration impurity region, the third concentration is equal to the fourth concentration, the third concentration is higher than the first concentration, and the first concentration is higher than the second concentration.

公开(公告)号：US20220209014A1

公开(公告)日：2022-06-30

申请号：US17561996

申请日：2021-12-27

Applicant: Japan Display Inc.

Inventor： Takuo KAITOH ,  Akihiro HANADA ,  Takashi OKADA

IPC: H01L29/786

Abstract: According to one embodiment, a semiconductor device includes a first insulating film formed of silicon nitride, a second insulating film disposed above the first insulating film and formed of silicon oxide, including a first region and a peripheral region surrounding the first region and thinner than the first region, an oxide semiconductor disposed on the second insulating film and intersecting the first region, a source electrode overlapping the peripheral region and a drain electrode overlapping the peripheral region. The first region is located between the source electrode and the drain electrode and separated from the source electrode and the drain electrode.

公开(公告)号：US20220173248A1

公开(公告)日：2022-06-02

申请号：US17523054

申请日：2021-11-10

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Takuo KAITOH

IPC: H01L29/786

Abstract: A semiconductor device includes a thin-film transistor. The thin-film transistor comprises an oxide semiconductor layer, a gate insulating layer, a gate electrode overlapped on the oxide semiconductor layer through the gate insulating layer, a source electrode in contact with the oxide semiconductor layer, a drain electrode in contact with the oxide semiconductor layer and n (n is a natural number) metal layer(s) in contact with the oxide semiconductor layer and disposed across the oxide semiconductor layer between the source electrode and the drain electrode. The oxide semiconductor layer has (n+1) channel regions between the source electrode and the drain electrode in a plan view.

公开(公告)号：US20220149082A1

公开(公告)日：2022-05-12

申请号：US17587671

申请日：2022-01-28

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Masayoshi FUCHI

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/786

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.

公开(公告)号：US20210405411A1

公开(公告)日：2021-12-30

申请号：US17471881

申请日：2021-09-10

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Toshihide JINNAI ,  Isao SUZUMURA ,  Hajime WATAKABE ,  Ryo ONODERA

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: A display device including: a substrate; a first thin film transistor of polysilicon semiconductor, a second thin film transistor of oxide semiconductor; a first light shading film opposing to the polysilicon semiconductor, and a second light shading film opposing to the oxide semiconductor; a first insulating film, a second insulating film which is constituted from plural insulating films, and a third insulating film superposed in this order; a first through hole penetrating the second insulating film and not penetrating the first insulating film and the third insulating film; a second through hole penetrating the first insulating film and the third insulating film; the first light shading film connects with a first conductive component, a part of the first conductive component exists on the third insulating film, through the second through hole.

公开(公告)号：US20210066351A1

公开(公告)日：2021-03-04

申请号：US16986462

申请日：2020-08-06

Applicant: Japan Display Inc.

Inventor： Hajime WATAKABE ,  Toshihide JINNAI ,  Ryo ONODERA ,  Akihiro HANADA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

Abstract: There is provided a technique that enables a reduction in the display failure of a display device and the improvement of the yields of the display device in a display device that adopts a semiconductor device including a thin film transistor using an oxide semiconductor. A semiconductor device according to an embodiment includes a thin film transistor having an oxide semiconductor. The oxide semiconductor has a drain region, a source region, and a channel region provided between the drain region and the source region. The thin film transistor includes a gate insulating film provided on the channel region, an aluminum oxide film provided on the gate insulating film, an insulating film provided on the aluminum oxide film, and a gate electrode provided on the insulating film.

公开(公告)号：US20200321359A1

公开(公告)日：2020-10-08

申请号：US16906569

申请日：2020-06-19

Applicant: Japan Display Inc.

Inventor： Akihiro HANADA ,  Masayoshi Fuchi

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/786

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.