Method for seamless session transfer of a mobile station
    51.
    发明申请
    Method for seamless session transfer of a mobile station 有权
    移动台无缝会话传送的方法

    公开(公告)号:US20060274694A1

    公开(公告)日:2006-12-07

    申请号:US11142312

    申请日:2005-06-02

    IPC分类号: H04Q7/00

    CPC分类号: H04W36/02

    摘要: In the method, a source base station sends first information to a target base station. The first information indicates a sequence number of a first data unit in a sequence of data units undelivered to the mobile station by the source base station. The source base station also sends the target base station second information. The second information indicates data units, after the first undelivered data unit in the sequence, that have been delivered to the mobile station by the source base station. The second information may further indicate portions of the first undelivered data unit that have been delivered to the mobile station by the source base station.

    摘要翻译: 在该方法中,源基站向目标基站发送第一信息。 第一信息表示源基站未递送给移动站的数据单元的序列中的第一数据单元的序列号。 源基站还发送目标基站第二信息。 第二信息指示在序列中的第一个未送达数据单元之后,由源基站传送到移动站的数据单元。 第二信息还可以指示由源基站传送到移动台的第一未传送数据单元的部分。

    Combination scooter/backpack
    52.
    发明申请

    公开(公告)号:US20060273534A1

    公开(公告)日:2006-12-07

    申请号:US11340504

    申请日:2006-01-27

    IPC分类号: B62B7/12 B62B3/02

    摘要: The combination scooter/backpack is an article carrying device with the capacity to be converted into a wheeled land vehicle, and therefore has two modes of usage. The article carrying device resembles a conventional backpack with two straps positioned to be placed over the user's shoulders, entitled backpack mode. The wheeled land vehicle functions as a popular collapsible scooter, two wheels mounted upon a board member with propulsion means provided by user's contact with the ground, entitled scooter mode. A horizontal handlebar is positioned at the top of the combination and serves to steer the front wheel during scooter mode. Conversion between backpack mode and scooter mode is accomplished with the raising and lowering of said handlebar and the manipulation of releasable fasteners and latches. In both backpack and scooter modes, a cover circumferentially surrounds the combination scooter/backpack to secure and protect components that are not in use.

    Electronic device including a trench field isolation region and a process for forming the same
    53.
    发明申请
    Electronic device including a trench field isolation region and a process for forming the same 审中-公开
    包括沟槽场隔离区域的电子器件及其形成方法

    公开(公告)号:US20060261436A1

    公开(公告)日:2006-11-23

    申请号:US11132936

    申请日:2005-05-19

    IPC分类号: H01L29/00 H01L21/76

    摘要: A process can be used to achieve the benefits of corner rounding of a semiconductor layer near an edge of a trench field isolation region without having the bird's beak or stress issues that occur with a conventional SOI device. A trench can be partially etched into a semiconductor layer, and a liner layer may be formed to help round corners of the second semiconductor layer. In one embodiment, the trench can be etched deeper and potentially expose an underlying buried oxide layer. Formation of the trench field isolation region can be completed, and electronic components can be formed within the semiconductor layer. An electronic device, such as an integrated circuit, will have a liner layer that extends only partly, but not completely, along a sidewall of the trench. In another embodiment, the process can be extended to other substrates and is not limited only to SOI substrates.

    摘要翻译: 可以使用一种方法来实现在沟槽场隔离区域的边缘附近的半导体层的圆角化的优点,而不会发生与常规SOI器件发生的鸟嘴或应力问题。 可以将沟槽部分地蚀刻到半导体层中,并且可以形成衬垫层以帮助第二半导体层的圆角。 在一个实施例中,可以更深地蚀刻沟槽并且潜在地暴露下面的掩埋氧化物层。 可以完成沟槽场隔离区的形成,并且可以在半导体层内形成电子部件。 诸如集成电路的电子装置将具有仅沿着沟槽的侧壁部分但不完全延伸的衬垫层。 在另一个实施例中,该工艺可以扩展到其它衬底,并且不仅限于SOI衬底。

    Method and apparatus for elimination of excessive field oxide recess for thin Si SOI
    56.
    发明申请
    Method and apparatus for elimination of excessive field oxide recess for thin Si SOI 有权
    用于消除薄Si SOI的过量场氧化物凹陷的方法和装置

    公开(公告)号:US20050130359A1

    公开(公告)日:2005-06-16

    申请号:US10737115

    申请日:2003-12-16

    CPC分类号: H01L21/76283

    摘要: A method for forming trench isolation in an SOI substrate begins with a pad oxide followed by an antireflective coating (ARC) over the upper semiconductor layer of the SOI substrate. The pad oxide is kept to a thickness not greater than about 100 Angstroms. An opening is formed for the trench isolation that extends into the oxide below the upper semiconductor layer to expose a surface thereof. The pad oxide is recessed along its sidewall with an isotropic etch. This is followed by a thin, not greater than 50 Angstroms, oxide grown along the sidewall of the opening. This grown oxide avoids forming a recess between the ARC and the pad oxide and also avoids forming a void between the surface of the lower oxide layer and the grown oxide. This results in avoiding polysilicon stringers when the subsequent polysilicon gate layer is formed.

    摘要翻译: 在SOI衬底中形成沟槽隔离的方法开始于衬底氧化物,然后在SOI衬底的上半导体层上方具有抗反射涂层(ARC)。 衬垫氧化物保持不大于约100埃的厚度。 形成用于沟槽隔离的开口,其延伸到上半导体层下方的氧化物中以暴露其表面。 衬垫氧化物沿其侧壁凹陷,具有各向同性蚀刻。 其后是沿着开口的侧壁生长的薄的,不大于50埃的氧化物。 这种生长的氧化物避免在ARC和衬垫氧化物之间形成凹陷,并且还避免在低氧化物层的表面和生长的氧化物之间形成空隙。 这导致当形成随后的多晶硅栅极层时避免多晶硅桁条。

    Wrap around body massager
    57.
    发明申请
    Wrap around body massager 失效
    包裹身体按摩器

    公开(公告)号:US20050049529A1

    公开(公告)日:2005-03-03

    申请号:US10654560

    申请日:2003-09-03

    IPC分类号: A61H7/00 A61H23/02

    CPC分类号: A61H23/0263 A61H7/001

    摘要: The present invention discloses a hand-held body massager having a transverse housing with a massage region. A massage unit is oriented within the housing for parting a massage effect from the massage region. A pair of elongate arms are each pivotally connected to opposed ends of the housing with the massage region oriented therebetween. Each arm includes a handle to be grasped by a user so that the user may urge the massage region against a target surface of the user's body.

    摘要翻译: 本发明公开了一种具有按摩区域的横向壳体的手持式身体按摩器。 按摩单元定位在外壳内,用于分离按摩区域的按摩效果。 一对细长的臂各自枢转地连接到壳体的相对的端部,按摩区域定向在其间。 每个臂包括由使用者抓握的手柄,使得使用者可以将按摩区域推向使用者身体的目标表面。

    Method for generating power
    58.
    发明授权
    Method for generating power 有权
    发电的方法

    公开(公告)号:US06584776B2

    公开(公告)日:2003-07-01

    申请号:US09808217

    申请日:2001-03-14

    IPC分类号: F02C330

    摘要: A method and system for generating power include using a cogeneration power system having a gas turbine. The gas turbine has a compressor section for receiving air to be compressed. The compressed air is fed to a combustor section where it is mixed with fuel and the fuel is burned to produce heated combustion gas. The heated combustion gas is expanded in an expander section to generate shaft work which is used to drive a generator or alternator for producing electric power. The heated combustion gas leaves the expander as turbine exhaust which is cooled by transferring at least part of its heat to the air ahead of the combustor.

    摘要翻译: 一种用于发电的方法和系统包括使用具有燃气轮机的热电联供系统。 燃气轮机具有用于接收待压缩空气的压缩机部分。 压缩空气被供给到燃烧器部分,在那里与燃料混合并燃烧燃料以产生加热的燃烧气体。 加热的燃烧气体在膨胀器部分中膨胀以产生用于驱动发电机或交流发电机以产生电力的轴作用。 加热的燃烧气体作为涡轮机废气离开膨胀机,其通过将至少部分热量转移到燃烧器前方的空气来冷却。

    Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean
    59.
    发明授权
    Use of inductively-coupled plasma in plasma-enhanced chemical vapor deposition reactor to improve film-to-wall adhesion following in-situ plasma clean 有权
    在等离子体增强化学气相沉积反应器中使用电感耦合等离子体以改善原位等离子体清洁后的膜对壁粘附

    公开(公告)号:US06534423B1

    公开(公告)日:2003-03-18

    申请号:US09752698

    申请日:2000-12-27

    申请人: Michael Turner

    发明人: Michael Turner

    IPC分类号: H01L2131

    摘要: An inductively-coupled hydrogen plasma (ICP) is used to passivate a plasma-enhanced chemical vapor deposition reactor following an in situ cleaning step. The hydrogen ICP effectively removes the fluorine and hydrogen that typically become impregnated in the walls of the reaction chamber during the in situ clean and thereby reduces the amount of “outgassing” that occurs during subsequent deposition cycles. This outgassing may cause the film of deposition material that normally forms on the walls to flake, significantly reducing the yield of usable devices. The hydrogen ICP passivation process has been found particularly effective in conjunction with the deposition of heavily-doped silicon oxide layers.

    摘要翻译: 电感耦合氢等离子体(ICP)用于在原位清洗步骤之后钝化等离子体增强化学气相沉积反应器。 氢气ICP有效地去除在原位清洁期间通常变得浸渍在反应室的壁中的氟和氢,从而减少在随后的沉积循环期间发生的“除气”的量。 这种除气可能导致通常在壁上形成的沉积材料的薄膜剥落,显着降低了可用装置的产量。 已经发现氢ICP钝化工艺与沉积重掺杂氧化硅层特别有效。