摘要:
In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device includes: a first insulating layer, a transparent conductive layer, and a second insulating layer which are sequentially formed on a substrate; a thin film transistor including an active layer formed under the first insulating layer, a gate electrode including a part of the transparent conductive layer as a lower electrode layer, and source and drain electrodes connected to both sides of the active layer; an organic light-emitting device including a sequentially stacked structure comprising a part of the transparent conductive layer as a pixel electrode, an intermediate layer which includes an emission layer, and an opposite electrode; and a capacitor including a first electrode and a second electrode, which includes a part of the transparent conductive layer as a lower electrode layer; wherein the transparent conductive layer and the second insulating layer include a hole.
摘要:
Display substrates are disclosed. In one aspect, display substrates include a first signal line, a second signal line, a first detour signal line and a second detour signal line. The first signal line includes a first region and a pair of second regions disposed on opposite sides of the first region. The pair of second regions are spaced apart from the first region. The second signal line crosses the first signal line. The second signal line includes a third region and a pair of fourth regions disposed on opposite sides of the third region. The pair of fourth regions are spaced apart from the third region. The first detour signal line electrically connects the pair of second regions to each other. The second detour signal line electrically connects the pair of fourth regions to each other. Related methods are also disclosed.
摘要:
A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.
摘要:
Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate on the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.
摘要:
A method of manufacturing an organic light-emitting display device includes forming a silicon layer and a gate insulating film over a substrate having a transistor region and a capacitor region; forming a halftone photoresist over the substrate; patterning the silicon layer and the gate insulating film; forming a residual photoresist by subjecting the halftone photoresist to an ashing process to leave part of the halftone photoresist over the transistor region; and doping at least a portion of the silicon layer with impurities by applying the impurities over an entire region of the substrate.
摘要:
An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion.
摘要:
A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.
摘要:
In an organic light-emitting display apparatus and a method of manufacturing the same, the organic light-emitting display apparatus comprises: at least one transistor, each including a semiconductor layer, a gate electrode, and source and drain electrodes; a first capacitor including a first electrode formed on the same plane as the semiconductor layer, a second electrode formed on the same plane as the gate electrode, and a third electrode formed on the same plane as the source and drain electrodes; a second capacitor including a first electrode formed on the same plane as the semiconductor layer and comprising ion impurities, and a second electrode formed on the same plane as the gate electrode; a pixel electrode formed on the same plane as the gate electrode and electrically connected to the transistor; a light-emitting layer disposed on the pixel electrode; and an opposite electrode disposed on the light-emitting layer and facing the pixel electrode.
摘要:
An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor in a thick area of the buffer layer, a pixel electrode in a thin area of the buffer layer, a gate electrode of the thin film transistor on the active layer and source and drain electrodes of the thin film transistor connected to the active layer, and a gate insulating layer between the gate electrode and the source and drain electrodes. The device also includes an emission layer on the pixel electrode, an opposite electrode facing the pixel electrode, and the emission layer is between the opposite electrode and the pixel electrode.
摘要:
Disclosed is an organic light emitting display. In the organic light emitting display, a substrate is divided into a display region, in which an image is displayed, and a non-display region surrounding the display region. The organic light emitting display includes a plurality of pixels provided on the display region. At least one thin film transistor is formed on the non-display region. The display region includes a first electrode connected to the thin film transistor, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer to apply voltage to the organic light emitting layer with the first electrode. A light blocking layer having an opening formed below the semiconductor layer is formed on the non-display region.