Organic light emitting diode display and method of manufacturing the same
    2.
    发明授权
    Organic light emitting diode display and method of manufacturing the same 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号:US08796671B2

    公开(公告)日:2014-08-05

    申请号:US12413842

    申请日:2009-03-30

    IPC分类号: H01L51/52

    摘要: An organic light emitting diode display including a substrate; a light blocking layer disposed on the substrate and having a semiconductor opening; a first semiconductor pattern disposed in the semiconductor opening; a gate insulating layer disposed on the light blocking layer and the first semiconductor pattern; a first gate electrode disposed on the gate insulating layer; a first source electrode electrically connected to the first semiconductor pattern; a first drain electrode spaced apart from the first source electrode; a protective insulating layer disposed on the first source electrode and the first drain electrode, the protective insulating layer having a contact portion; a pixel electrode disposed on the protective insulating layer contacting the first drain electrode through the contact portion; an emitting layer disposed on the pixel electrode; and a common electrode disposed on the emitting layer.

    摘要翻译: 一种有机发光二极管显示器,包括基板; 遮光层,设置在所述基板上并具有半导体开口; 设置在半导体开口中的第一半导体图案; 设置在所述遮光层和所述第一半导体图案上的栅极绝缘层; 设置在所述栅极绝缘层上的第一栅电极; 电连接到第一半导体图案的第一源电极; 与所述第一源电极间隔开的第一漏电极; 保护绝缘层,设置在所述第一源电极和所述第一漏电极上,所述保护绝缘层具有接触部分; 设置在所述保护绝缘层上的像素电极,所述保护绝缘层通过所述接触部分接触所述第一漏电极; 设置在像素电极上的发光层; 以及设置在发光层上的公共电极。

    Organic light emitting diode display and manufacturing method thereof
    3.
    发明授权
    Organic light emitting diode display and manufacturing method thereof 失效
    有机发光二极管显示及其制造方法

    公开(公告)号:US08610123B2

    公开(公告)日:2013-12-17

    申请号:US13064864

    申请日:2011-04-21

    IPC分类号: H01L29/08 H01L35/24

    摘要: An organic light emitting diode (OLED) display includes: a substrate; a semiconductor layer on the substrate; a gate insulating layer covering the semiconductor layer; a gate electrode formed in the gate insulating layer and overlapping the semiconductor layer; a pixel electrode formed in a pixel area over the gate insulating layer; an interlayer insulating layer covering the gate electrode and the gate insulating layer, and exposing the pixel electrode through a pixel opening; a source electrode and a drain electrode formed in the interlayer insulating layer and connected to the semiconductor layer; and a barrier rib covering the interlayer insulating layer, the source electrode, and the drain electrode, and the drain electrode contacts a side wall of the pixel opening and is connected to the pixel electrode. Such an OLED display may have an improved aperture ratio.

    摘要翻译: 有机发光二极管(OLED)显示器包括:基板; 衬底上的半导体层; 覆盖半导体层的栅极绝缘层; 形成在所述栅极绝缘层中且与所述半导体层重叠的栅电极; 形成在所述栅绝缘层上的像素区域中的像素电极; 覆盖所述栅电极和所述栅极绝缘层的层间绝缘层,并且使所述像素电极通过像素开口曝光; 源电极和漏电极,形成在层间绝缘层中并连接到半导体层; 并且覆盖层间绝缘层,源电极和漏电极的阻挡肋,漏电极接触像素开口的侧壁并连接到像素电极。 这样的OLED显示器可以具有改善的开口率。

    Ion implanting system
    4.
    发明授权
    Ion implanting system 有权
    离子注入系统

    公开(公告)号:US08575574B2

    公开(公告)日:2013-11-05

    申请号:US12962829

    申请日:2010-12-08

    IPC分类号: G21G5/00

    摘要: An ion implanting system includes an ion generating system that generates ion beams and an ion implanting chamber in which a work-piece that is irradiated with the ion beams generated from the ion generating system is provided and into which the ion beams generated from the ion generating unit are directed. The ion generating system includes a first ion generating unit that irradiates ions to an upper portion of the work-piece and a second ion generating unit irradiating ions to a lower portion of the work-piece. The ion implanting system a can implant ions into a large work-piece through one ion implantation process with ion generating units arranged alternately with respect to each other in the transfer direction of the work-piece.

    摘要翻译: 离子注入系统包括产生离子束的离子产生系统和离子注入室,在该离子注入室中,设置有从离子产生系统产生的离子束照射的工件,并且从离子产生系统产生的离子束 单位被指示。 离子产生系统包括将离子照射到工件的上部的第一离子产生单元和将离子照射到工件的下部的第二离子产生单元。 离子注入系统a可以通过一个离子注入工艺将离子注入到大的工件中,其中离子发生单元在工件的传送方向上彼此交替排列。

    Thin-film transistor array substrate, organic light-emitting display including the same and method of manufacturing the same
    5.
    发明授权
    Thin-film transistor array substrate, organic light-emitting display including the same and method of manufacturing the same 失效
    薄膜晶体管阵列基板,包括其的有机发光显示器及其制造方法

    公开(公告)号:US08552430B2

    公开(公告)日:2013-10-08

    申请号:US13349440

    申请日:2012-01-12

    IPC分类号: H01L29/04 H01L31/20

    摘要: A thin-film transistor array substrate is disclosed. In one embodiment, the transistor includes a capacitor including a lower electrode disposed on the same layer as an active layer and an upper electrode disposed on the same layer as a gate electrode. The transistor may also include a first insulating layer disposed between the active layer and the gate electrode and between the lower and upper electrodes, the first insulating layer not being disposed on a perimeter of the lower electrode. The transistor may further include a second insulating layer between the first insulating layer and the source and drain electrodes, the second insulating layer not being disposed on perimeters of the upper and lower electrodes.

    摘要翻译: 公开了一种薄膜晶体管阵列基板。 在一个实施例中,晶体管包括电容器,其包括设置在与有源层相同的层上的下电极和设置在与栅电极相同的层上的上电极。 晶体管还可以包括设置在有源层和栅电极之间以及下电极和上电极之间的第一绝缘层,第一绝缘层不设置在下电极的周边上。 晶体管还可以包括在第一绝缘层和源极和漏极之间的第二绝缘层,第二绝缘层不设置在上电极和下电极的周边上。

    Organic light emitting diode display and manufacturing method thereof
    6.
    发明授权
    Organic light emitting diode display and manufacturing method thereof 有权
    有机发光二极管显示及其制造方法

    公开(公告)号:US08436357B2

    公开(公告)日:2013-05-07

    申请号:US13067025

    申请日:2011-05-03

    IPC分类号: H01L29/04

    摘要: Making an OLED display, includes forming a first storage plate and a gate insulating layer covering the first storage plate on a substrate; sequentially forming a second storage plate covering the first storage plate and a capacitor intermediate in the gate insulating layer; forming a first doping region by injecting an impurity to a part that is not covered by the capacitor intermediate in the first storage plate; forming an interlayer insulating layer having a capacitor opening exposing the capacitor intermediate, and a plurality of erosion preventing layers on an edge of the capacitor intermediate toward the first doping region in the capacitor opening; removing the capacitor intermediate including the erosion preventing layer and a lower region of the erosion preventing layer, and injecting an impurity in the first storage plate through the second storage plate to form a second doping region contacting the first doping region.

    摘要翻译: 制造OLED显示器包括在基板上形成覆盖第一存储板的第一存储板和栅极绝缘层; 顺序地形成覆盖第一存储板的第二存储板和在栅极绝缘层中间的电容器; 通过向第一存储板中未被电容器中间体覆盖的部分注入杂质而形成第一掺杂区; 形成具有使所述电容器中间露出的电容器开口的层间绝缘层,以及在所述电容器开口中的朝向所述第一掺杂区域的电容器的边缘上的多个防蚀蚀层; 去除包括侵蚀防止层的电容器中间件和侵蚀防止层的下部区域,以及通过第二存储板在第一存储板中注入杂质以形成与第一掺杂区域接触的第二掺杂区域。

    Organic light emitting device and manufacturing method thereof
    7.
    发明授权
    Organic light emitting device and manufacturing method thereof 有权
    有机发光器件及其制造方法

    公开(公告)号:US08193695B2

    公开(公告)日:2012-06-05

    申请号:US12468597

    申请日:2009-05-19

    IPC分类号: H01J1/64

    摘要: The present invention relates to an organic light emitting device and a manufacturing method thereof. A method of manufacturing an organic light emitting device according to an exemplary embodiment of the present invention includes: respectively forming first, second, and third driving transistors in a first region, a second region, and a third region on a substrate; forming an insulating layer on the first to third driving transistors; respectively forming first, second, and third pixel electrodes on the insulating layer, the first, second, and third pixel electrodes being formed in the first, second, and third regions, respectively; forming an auxiliary electrode on a side surface of each of the first, second, and third pixel electrodes; forming an organic light emitting member on the first to third pixel electrodes; and forming a common electrode on the organic light emitting member.

    摘要翻译: 本发明涉及一种有机发光器件及其制造方法。 根据本发明的示例性实施例的制造有机发光器件的方法包括:在衬底上的第一区域,第二区域和第三区域中分别形成第一,第二和第三驱动晶体管; 在第一至第三驱动晶体管上形成绝缘层; 分别在所述绝缘层上形成第一,第二和第三像素电极,所述第一,第二和第三像素电极分别形成在所述第一,第二和第三区域中; 在所述第一,第二和第三像素电极中的每一个的侧表面上形成辅助电极; 在所述第一至第三像素电极上形成有机发光部件; 以及在有机发光部件上形成公共电极。

    Thin film transitor, fabrication method of the same, and display device having the same
    8.
    发明申请
    Thin film transitor, fabrication method of the same, and display device having the same 有权
    薄膜转换器及其制造方法以及具有该薄膜晶体管的显示装置

    公开(公告)号:US20110248279A1

    公开(公告)日:2011-10-13

    申请号:US12929733

    申请日:2011-02-11

    IPC分类号: H01L29/786 H01L21/336

    摘要: A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

    摘要翻译: 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置,所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案,所述金属图案与所述半导体层绝缘,其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界,并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。

    Flat panel display device and method of manufacturing the same
    9.
    发明申请
    Flat panel display device and method of manufacturing the same 有权
    平板显示装置及其制造方法

    公开(公告)号:US20110140107A1

    公开(公告)日:2011-06-16

    申请号:US12923599

    申请日:2010-09-29

    IPC分类号: H01L33/18 H01L21/336

    摘要: A flat panel display device including a substrate including first and second regions; an active layer on the first region of the substrate including a semiconductor material; a lower electrode on the second region of the substrate including the semiconductor material; a first insulating layer on the substrate including the active layer and the lower electrode thereon; a gate electrode on the first insulating layer overlying the active layer and including a first conductive layer pattern and a second conductive layer pattern; an upper electrode on the first insulating layer overlying the lower electrode and including the first conductive layer pattern and the second conductive layer pattern; a second insulating layer on the gate electrode and the upper electrode exposing portions of the active layer and portions of the upper electrode; and a source electrode and a drain electrode connected to the exposed portions of the active layer.

    摘要翻译: 一种平板显示装置,包括:包括第一和第二区域的基板; 在包括半导体材料的衬底的第一区域上的有源层; 在包括半导体材料的基板的第二区域上的下电极; 在其上的包括有源层和下电极的基板上的第一绝缘层; 覆盖有源层的第一绝缘层上的栅电极,包括第一导电层图案和第二导电层图案; 所述第一绝缘层上的上电极覆盖所述下电极并且包括所述第一导电层图案和所述第二导电层图案; 栅电极上的第二绝缘层和暴露有源层的部分和上电极的部分的上电极; 以及连接到有源层的暴露部分的源电极和漏电极。

    FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    平板显示装置及其制造方法

    公开(公告)号:US20110128490A1

    公开(公告)日:2011-06-02

    申请号:US12957246

    申请日:2010-11-30

    摘要: A flat panel display device and a method of manufacturing the flat panel display device are disclosed. In one embodiment, the flat panel display device includes: i) a first substrate, ii) an active layer formed over the first substrate, wherein the active layer comprises a source region, a drain region, and a channel region, iii) a gate insulating layer formed on the active layer, iv) a gate electrode formed on the gate insulating layer and over the channel region of the active layer and v) a first interlayer insulating film formed on the gate insulating layer and the gate electrode. The device may further includes 1) a source electrode and a drain electrode electrically connected to the source region and the drain region of the active layer, respectively, through a contact hole, wherein the contact hole is formed in the first interlayer insulating film and the gate insulating layer, 2) a second interlayer insulating film interposed substantially only between i) the first interlayer insulating film and ii) the source electrode and the drain electrode, 3) a passivation layer formed on the first interlayer insulating film and the source electrode and the drain electrode and 4) a pixel electrode electrically connected to the source electrode or the drain electrode through a via-hole formed in the passivation layer.

    摘要翻译: 公开了一种平板显示装置及其制造方法。 在一个实施例中,平板显示装置包括:i)第一衬底,ii)形成在第一衬底上的有源层,其中有源层包括源极区,漏极区和沟道区,iii)栅极 形成在有源层上的绝缘层,iv)形成在栅极绝缘层上并在有源层的沟道区上方的栅极,以及v)形成在栅极绝缘层和栅电极上的第一层间绝缘膜。 该器件还可以包括:1)源电极和漏极,分别通过接触孔与有源层的源极区域和漏极区域电连接,其中接触孔形成在第一层间绝缘膜和 栅绝缘层,2)基本上仅介于i)第一层间绝缘膜和ii)源电极和漏电极之间的第二层间绝缘膜,3)形成在第一层间绝缘膜和源电极上的钝化层,以及 漏极电极和4)通过形成在钝化层中的通孔电连接到源电极或漏电极的像素电极。