公开(公告)号：US07579630B2

公开(公告)日：2009-08-25

申请号：US11716682

申请日：2007-03-12

申请人： Jun-ichi Hashimoto

发明人： Jun-ichi Hashimoto

IPC分类号： H01L33/00

CPC分类号： H01S5/3235 ,  B82Y20/00 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/32366 ,  H01S5/34306

摘要： A semiconductor optical device includes a GaAs substrate of a first conductivity type; a III-V compound semiconductor layer provided on the GaAs substrate; an active layer provided on the III-V compound semiconductor layer; and a cladding layer of a second conductivity type provided on the active layer, wherein the band gap energy of the III-V compound semiconductor layer is larger than the band gap energy of the GaAs substrate, wherein the band gap energy of the active layer is smaller than the band gap energy of the GaAs substrate, and wherein the thickness of the III-V compound semiconductor layer is not more than 0.2 μm.

摘要翻译： 半导体光学器件包括第一导电类型的GaAs衬底; 设置在GaAs衬底上的III-V族化合物半导体层; 设置在III-V族化合物半导体层上的有源层; 以及设置在所述有源层上的第二导电类型的覆层，其中所述III-V族化合物半导体层的带隙能量大于所述GaAs衬底的带隙能量，其中所述有源层的带隙能量为 小于GaAs衬底的带隙能量，并且其中III-V族化合物半导体层的厚度不大于0.2μm。

公开(公告)号：US20080049804A1

公开(公告)日：2008-02-28

申请号：US11889613

申请日：2007-08-15

申请人： Jun-ichi Hashimoto

发明人： Jun-ichi Hashimoto

IPC分类号： H01S5/227 ,  H01L33/00

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/20 ,  H01S5/0014 ,  H01S5/2209 ,  H01S5/2224 ,  H01S5/3211 ,  H01S5/34306 ,  H01S2304/00

摘要： The present invention provides a semiconductor laser diode that has the buried mesa stripe and a current blocking layer without involving any pn-junction. The laser diode includes a lower cladding layer, an active region and an upper cladding layer on the GaAs substrate in this order. The mesa stripe, buried with the current blocking layer, includes the first portion of the upper cladding layer in addition to the active region. The current blocking layer of the invention is made of one of un-doped GaInP and un-doped AlGaInP grown at a relatively low temperature below 600° C. and shows high resistivity greater than 105 Ω·cm for the bias voltage below 5 V.

摘要翻译： 本发明提供一种半导体激光二极管，其具有埋入的台面条纹和电流阻挡层，而不涉及任何pn结。 该激光二极管依次包括在GaAs衬底上的下包层，有源区和上覆层。 与电流阻挡层一起埋设的台面条带除了有源区域之外还包括上覆层的第一部分。 本发明的电流阻挡层由在低于600℃的较低温度下生长的未掺杂的GaInP和未掺杂的AlGaInP中的一种制成，并且显示出大于10Ω·cm的高电阻率 偏置电压低于5 V.

公开(公告)号：US20060245463A1

公开(公告)日：2006-11-02

申请号：US11390466

申请日：2006-03-28

申请人： Jun-ichi Hashimoto

发明人： Jun-ichi Hashimoto

IPC分类号： H01S3/08

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/34 ,  H01S5/50 ,  H01S5/5045 ,  H01S2301/02

摘要： A semiconductor optical amplifier according to the present invention comprises a lower cladding layer of a first conductive type, an upper cladding layer of a second conductive type, an active layer, and a diffraction grating layer. The lower cladding layer includes first and second regions. The first and second regions are arranged in a predetermined direction, and the upper cladding layer is supported by the first region. The active layer is provided between the first region of the lower cladding layer and the upper cladding layer, and the diffraction grating layer has a diffraction grating. The diffraction grating extends in the predetermined direction. The diffraction grating layer is supported by the second region, and the diffraction grating layer is optically coupled to the active layer.

摘要翻译： 根据本发明的半导体光放大器包括第一导电类型的下包层，第二导电类型的上包层，有源层和衍射光栅层。 下包层包括第一和第二区域。 第一和第二区域沿预定方向布置，并且上部包层由第一区域支撑。 有源层设置在下包层的第一区域和上包层之间，衍射光栅层具有衍射光栅。 衍射光栅沿预定方向延伸。 衍射光栅层由第二区域支撑，衍射光栅层与有源层光耦合。