Longitudinal bias structure having stability with minimal effect on output
    51.
    发明授权
    Longitudinal bias structure having stability with minimal effect on output 失效
    纵向偏置结构具有稳定性,对输出影响最小

    公开(公告)号:US07123454B2

    公开(公告)日:2006-10-17

    申请号:US10460087

    申请日:2003-06-12

    申请人: Kenichi Takano

    发明人: Kenichi Takano

    IPC分类号: G11B5/39

    摘要: It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the output signal. This problem has been overcome by adding an additional, compensatory, bias layer. This layer is permanently magnetized in the same direction as the main bias magnet. Through control of the magnetization strength and location of the compensatory bias layer, cancellation of the field induced in the free layer, by the main bias layers, is achieved. A process for manufacturing the devices is also described.

    摘要翻译: 需要通过提供纵向偏置场来稳定GMR或TMR器件的自由层。 随着读取轨迹变得非常窄,该领域可以显着降低输出信号的强度。 通过添加额外的补偿性偏置层已经克服了这个问题。 该层在与主偏置磁铁相同的方向上永久磁化。 通过控制补偿偏置层的磁化强度和位置,实现由主偏压层在自由层中感应的场的消除。 还描述了用于制造器件的工艺。

    Novel abutted exchange bias design for sensor stabilization

    公开(公告)号:US20060198059A1

    公开(公告)日:2006-09-07

    申请号:US11074270

    申请日:2005-03-04

    IPC分类号: G11B5/127 G11B5/33

    CPC分类号: G11B5/3932

    摘要: A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

    Yoke structure with a step
    53.
    发明授权
    Yoke structure with a step 有权
    轭结构有一步

    公开(公告)号:US07102852B2

    公开(公告)日:2006-09-05

    申请号:US10776813

    申请日:2004-02-11

    申请人: Kenichi Takano

    发明人: Kenichi Takano

    IPC分类号: G11B5/23

    CPC分类号: G11B5/147 G11B5/33

    摘要: A planar top yoke in a magnetic write head is disclosed. The top yoke includes a backside region and a second pole tip region that is thinner than the backside region and forms a step at the ABS. Alternatively, a front section of the backside region includes a step with a thickness greater than the second pole tip region. Therefore, flux is directed from a thicker backside region toward the gap side of the second pole tip layer near the ABS. A lower flux density is formed at the top of the step at the ABS which reduces the flank field/gap field ratio and prevents unwanted erasure of adjacent data tracks. A high gap field is achieved while maintaining a low flank field during high write current conditions. The step recess from the ABS toward the backside region is about 0.2 to 2 microns.

    摘要翻译: 公开了磁写头中的平面顶轭。 顶部磁轭包括背面区域和比背面区域薄的第二极尖端区域,并在ABS处形成台阶。 或者,背侧区域的前部包括具有大于第二极尖端区域的厚度的台阶。 因此,焊剂从较厚的背面区域朝向ABS附近的第二极尖端层的间隙侧引导。 在ABS的台阶顶部形成较低的通量密度,其降低了侧面场/间隙场比,并且防止相邻数据轨道的不必要的擦除。 在高写入电流条件期间,在保持低侧面场的同时实现高间隙场。 从ABS向后侧区域的台阶凹槽为约0.2至2微米。

    Low distortion variable gain and rooting amplifier with solid state relay
    54.
    发明申请
    Low distortion variable gain and rooting amplifier with solid state relay 有权
    低失真可变增益和固态继电器生根放大器

    公开(公告)号:US20050052230A1

    公开(公告)日:2005-03-10

    申请号:US10918904

    申请日:2004-08-16

    IPC分类号: H03G3/12 H03G1/00 H03F1/14

    CPC分类号: H03G1/0088

    摘要: An amplifier which comprises an operational amplifier, a semiconductor switch that selectively connects at least one circuit to an input terminal of the operational amplifier, and a device for virtual shorting of both terminals of the semiconductor switch in an isolated state.

    摘要翻译: 一种放大器,包括运算放大器,选择性地将至少一个电路连接到运算放大器的输入端的半导体开关,以及用于在隔离状态下虚拟短路半导体开关的两个端子的装置。

    Double layer longitudinal bias structure
    55.
    发明申请
    Double layer longitudinal bias structure 有权
    双层纵向偏置结构

    公开(公告)号:US20050002130A1

    公开(公告)日:2005-01-06

    申请号:US10613598

    申请日:2003-07-03

    申请人: Kenichi Takano

    发明人: Kenichi Takano

    IPC分类号: G11B5/39

    CPC分类号: G11B5/3932

    摘要: It is necessary to stabilize the free layer of GMR or TMR devices by providing a longitudinal bias field. As read tracks become very narrow, this field can drastically reduce the strength of the output signal. This problem has been overcome by adding an additional bias layer. This layer, which may be located either above or below the conventional bias layer, is permanently magnetized in the opposite direction to that of the permanent magnets used to achieve longitudinal stability. Through control of the magnetization strength and location of this additional bias layer, cancellation of much of the field induced in the free layer by the conventional bias layers is achieved.

    摘要翻译: 需要通过提供纵向偏置场来稳定GMR或TMR器件的自由层。 随着读取轨迹变得非常窄,该领域可以显着降低输出信号的强度。 通过添加额外的偏置层已经克服了这个问题。 可以位于常规偏置层上方或下方的该层可以与用于实现纵向稳定性的永磁体的方向相反的方向被永久磁化。 通过控制该附加偏置层的磁化强度和位置,实现了由常规偏置层在自由层中感应的大部分场的消除。

    Perpendicular magnetic recoding head with a laminated pole
    59.
    发明授权
    Perpendicular magnetic recoding head with a laminated pole 有权
    垂直磁记录头与层叠极

    公开(公告)号:US08559132B2

    公开(公告)日:2013-10-15

    申请号:US13373251

    申请日:2011-11-09

    IPC分类号: G11B5/127 G11B5/147

    摘要: A laminated write pole layer for a PMR write head is disclosed in which a plurality of “n” magnetic layers and “n−1” non-magnetic spacers are formed in an alternating fashion on a substrate. The non-magnetic spacers promote exchange decoupling or antiferromagnetic coupling between adjacent magnetic layers. Writability is improved when the trailing magnetic layer has a thickness greater than the thickness of other magnetic layers and preferably >25% of the total thickness of the magnetic layers. The thicknesses of the other magnetic layers may be equal or may become progressively smaller with increasing distance from the trailing magnetic layer. In another embodiment, the non-magnetic spacer between the trailing magnetic layer and the nearest magnetic layer is replaced by a magnetic spacer made of a soft magnetic material to promote magnetic coupling and effectively increase the thickness of the trailing magnetic layer.

    摘要翻译: 公开了一种用于PMR写入头的层叠写入极层,其中在衬底上以交替的方式形成多个“n”个磁性层和“n-1”个非磁性间隔物。 非磁性间隔物促进相邻磁性层之间的交换去耦或反铁磁耦合。 当后磁性层的厚度大于其它磁性层的厚度,优选磁性层的总厚度的25%时,写入性能得到改善。 其他磁性层的厚度可以相等或随着与后磁性层的距离的增加而逐渐变小。 在另一个实施例中,后磁性层和最近的磁性层之间的非磁性间隔物被由软磁材料制成的磁性隔离层代替,以促进磁耦合并有效地增加后磁层的厚度。