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228 条记录 (耗时 0.061 秒)

    Voltage-controlled oscillator robust against power noise and communication apparatus using the same
    51.
    发明授权
    Voltage-controlled oscillator robust against power noise and communication apparatus using the same 有权
    电压控制振荡器对抗功率噪声和使用其的通信设备

    公开(公告)号：US08228132B2

    公开(公告)日：2012-07-24

    申请号：US12779145

    申请日：2010-05-13

    申请人： Young-Ho Kim ,  Je-Hoon Yun

    发明人： Young-Ho Kim ,  Je-Hoon Yun

    IPC分类号： H03L1/00

    CPC分类号： H03B5/1228 ,  H03B5/1212 ,  H03B5/1243

    摘要： A voltage-controlled oscillator robust against power supply includes: a regulating unit configured to maintain a virtual power supply of a VCO core circuit in a stable condition with regard to a reference voltage; and a power supply removal unit including second transistors configured to correspond to respective first transistors of the regulating unit, the power supply removal unit being configured to remove power noise of the virtual power supply by using negative feedback through a closed-circuit loop formed by each of the first and second transistors.

    摘要翻译： 稳定抵抗电源的压控振荡器包括：调节单元，被配置成将VCO核心电路的虚拟电源相对于参考电压保持在稳定状态; 以及电源去除单元，包括被配置为对应于所述调节单元的各个第一晶体管的第二晶体管，所述电源去除单元被配置为通过使用由每个所形成的闭环回路的负反馈来消除所述虚拟电源的功率噪声 的第一和第二晶体管。

    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF DRIVING THE SAME
    52.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF DRIVING THE SAME 有权
    液晶显示装置及其驱动方法

    公开(公告)号：US20120146967A1

    公开(公告)日：2012-06-14

    申请号：US13314698

    申请日：2011-12-08

    申请人： Min-Kyu Kim ,  Young-Ho Kim ,  Sung-Jo Koo

    发明人： Min-Kyu Kim ,  Young-Ho Kim ,  Sung-Jo Koo

    IPC分类号： G06F3/038

    CPC分类号： G09G3/3614 ,  G09G3/3688 ,  G09G2310/0283 ,  G09G2310/0286

    摘要： The liquid crystal display device includes a display panel for displaying a picture thereon, first to (n)th upper data drive ICs for supplying pixel voltages to one side of each data line in the display panel, first to (n)th bottom data drive ICs for supplying pixel voltages to the other side of each data line, a first timing controller for generating an upper data control signal and for controlling operation of the upper data drive ICs, and a second timing controller for generating a bottom data control signal and for controlling operation of the bottom data drive ICs wherein at least one of the first and second timing controllers analyzes the picture data applied thereto and controls the polarities of the pixel voltages to be forwarded from the upper data drive ICs and the bottom data drive ICs with reference to the result of the analysis.

    摘要翻译： 液晶显示装置包括用于在其上显示图像的显示面板，第一至第（n）个用于向显示面板中的每条数据线的一侧提供像素电压的上部数据驱动IC，第一至第（n）个底部数据驱动 用于将像素电压提供给每条数据线的另一侧的IC，用于产生上数据控制信号并用于控制上数据驱动IC的操作的第一定时控制器，以及用于产生下数据控制信号的第二定时控制器， 控制底部数据驱动IC的操作，其中第一和第二定时控制器中的至少一个分析施加到其上的图像数据，并且以参考的方式控制要从上部数据驱动IC和底部数据驱动IC转发的像素电压的极性 分析结果。

    Variable gain amplifier and receiver including the same
    54.
    发明授权
    Variable gain amplifier and receiver including the same 有权
    可变增益放大器和接收器包括相同的

    公开(公告)号：US08050642B2

    公开(公告)日：2011-11-01

    申请号：US12111913

    申请日：2008-04-29

    申请人： Young-Ho Kim ,  Seok-Bong Hyun

    发明人： Young-Ho Kim ,  Seok-Bong Hyun

    IPC分类号： H04B1/06 ,  H04B7/00

    CPC分类号： H03G3/3052 ,  H03F3/45475 ,  H03F3/45968 ,  H03F2203/45134 ,  H03F2203/45138 ,  H03F2203/45212 ,  H03H11/1291

    摘要： Provided are a variable gain amplifier and a receiver including the same. The variable gain amplifier includes: a gain controller generating a gain control voltage; a variable gain amplifier amplifying an input signal and a feedback signal by using a voltage gain that is linearly proportional to the gain control voltage, and converting the amplified signal into a predetermined magnitude of a signal; and an offset canceller removing an offset from an output signal of the variable gain amplifier and outputting the offset removed result as the feedback signal. The variable gain amplifier includes a plurality of operational transconductance amplifiers.

    摘要翻译： 提供一种可变增益放大器和包括该可变增益放大器的接收器。 可变增益放大器包括：增益控制器，产生增益控制电压; 可变增益放大器，通过使用与增益控制电压成线性比例的电压增益来放大输入信号和反馈信号，并将放大的信号转换成预定幅度的信号; 以及偏移消除器，其从所述可变增益放大器的输出信号中移除偏移并输出所述偏移去除结果作为所述反馈信号。 可变增益放大器包括多个运算跨导放大器。

    MASK ROM DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE MASK ROM DEVICE, AND METHODS OF FABRICATING MASK ROM DEVICE AND SEMICONDUCTOR DEVICE
    56.
    发明申请
    MASK ROM DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE MASK ROM DEVICE, AND METHODS OF FABRICATING MASK ROM DEVICE AND SEMICONDUCTOR DEVICE 失效
    掩蔽ROM器件，包括掩模ROM器件的半导体器件，以及制造掩模ROM器件和半导体器件的方法

    公开(公告)号：US20100285641A1

    公开(公告)日：2010-11-11

    申请号：US12836066

    申请日：2010-07-14

    申请人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young-Ho Kim ,  Myung-Jo Chun ,  Jung-Ho Moon

    发明人： Yong-Kyu Lee ,  Jeong-Uk Han ,  Hee-Seog Jeon ,  Young-Ho Kim ,  Myung-Jo Chun ,  Jung-Ho Moon

    IPC分类号： H01L21/8238 ,  H01L21/8234

    CPC分类号： H01L27/105 ,  H01L21/26586 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/1052 ,  H01L27/11266 ,  H01L27/11293

    摘要： A mask read-only memory (ROM) device, which can stably output data, includes an on-cell and an off-cell. The on-cell includes an on-cell gate structure on a substrate and an on-cell junction structure within the substrate. The off-cell includes an off-cell gate structure on the substrate and an off-cell junction structure within the substrate. The on-cell gate structure includes an on-cell gate insulating film, an on-cell gate electrode and an on-cell gate spacer. The on-cell junction structure includes first and second on-cell ion implantation regions of a first polarity and third and fourth on-cell ion implantation regions of a second polarity. The off-cell gate structure includes an off-cell gate insulating film, an off-cell gate electrode and an off-cell gate spacer. The off-cell junction structure includes first and second off-cell ion implantation regions of the first polarity and a third off-cell ion implantation region of the second polarity.

    摘要翻译： 可以稳定地输出数据的掩模只读存储器（ROM）装置包括接通电池和截止电池。 开放单元包括衬底上的孔上栅极结构和衬底内的电池单元结结构。 离子电池包括在衬底上的离子电池栅极结构和衬底内的细胞外结合结构。 单体栅极结构包括单元间栅极绝缘膜，单晶体栅极电极和单元间栅极间隔物。 该单电池结结构包括具有第一极性的第一和第二开孔离子注入区和第二极性的第三和第四接通电离子注入区。 离群栅极结构包括离子栅极绝缘膜，离子阱栅极电极和非电池栅极间隔物。 离电池结结构包括具有第一极性的第一和第二离子外离子注入区域和第二极性的第三离子间离子注入区域。

    Semiconductor device and method of fabricating the same
    58.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07785990B2

    公开(公告)日：2010-08-31

    申请号：US12409052

    申请日：2009-03-23

    申请人： Young-Ho Kim

    发明人： Young-Ho Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L21/78

    摘要： A method of forming a semiconductor device includes forming a first chip region, a second chip region, and a scribe lane region between the first and second chip regions in a wafer, the wafer having a first surface and a second surface facing the first surface, and forming a penetrating extension hole and a scribe connector in the scribe lane region, the penetrating extension hole penetrating the wafer from the first surface to the second surface and extending along the scribe lane region, wherein the scribe connector connects the first and second chip regions spaced apart from each other by the penetrating extension hole.

    摘要翻译： 一种形成半导体器件的方法包括在晶片中的第一和第二芯片区域之间形成第一芯片区域，第二芯片区域和划线路区域，晶片具有面向第一表面的第一表面和第二表面， 在划线路区域形成穿透延伸孔和划线连接器，穿透延伸孔从第一表面穿过晶片延伸到第二表面并沿着划线路区域延伸，其中划线连接器将第一和第二芯片区域 通过穿透延伸孔彼此间隔开。

    Mask ROM and method of fabricating the same
    60.
    发明申请
    Mask ROM and method of fabricating the same 审中-公开
    掩模ROM及其制造方法

    公开(公告)号：US20100059888A1

    公开(公告)日：2010-03-11

    申请号：US12590482

    申请日：2009-11-09

    申请人： Yong-Kyu Lee ,  Hee-Seog JEON ,  Jeong-Uk HAN ,  Young-Ho Kim ,  Myung-Jo Chun

    发明人： Yong-Kyu Lee ,  Hee-Seog JEON ,  Jeong-Uk HAN ,  Young-Ho Kim ,  Myung-Jo Chun

    IPC分类号： H01L23/532 ,  H01L23/48

    CPC分类号： H01L27/1021

    摘要： A mask read-only memory (ROM) includes a dielectric layer formed on a substrate and a plurality of first conductive lines formed on the dielectric layer. A plurality of diodes are formed in the first conductive lines, and a plurality of final vias are formed for a first set of the diodes each representing a first type of memory cell, with no final via being formed for a second set of diodes each representing a second type of memory cell. Each of a plurality of second conductive lines is formed over a column of the diodes.

    摘要翻译： 掩模只读存储器（ROM）包括形成在基板上的电介质层和形成在电介质层上的多个第一导电线。 在第一导线中形成多个二极管，并且为第一组二极管形成多个最终通孔，每个二极管表示第一类型的存储单元，没有形成用于第二组二极管的最终通孔，每个二极管表示 第二种类型的存储单元。 多个第二导电线中的每一个形成在二极管的列上。