公开(公告)号：US07264909B2

公开(公告)日：2007-09-04

申请号：US11268526

申请日：2005-11-08

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： G03C5/00 ,  G03F9/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  Y10S430/143

摘要： An exposure parameter obtaining method comprising forming a charged reference pattern and a plurality of charged exposure patterns at a surface region of a to-be-exposed insulation substrate by projecting a charged beam with a first incident energy using a reference pattern whose exposure parameter has been known beforehand and all of selected exposure patterns to be corrected, forming electron signal images for the charged reference pattern and the plurality of charged exposure patterns on the basis of charged particles including secondary electrons by scanning the surface of the insulation substrate with a charged beam with a second incident energy lower than the first incident energy, and creating, on the basis of the electron signal images, the exposure parameters including at least one of position, focal point, astigmatism, rotation, and magnification for all of the selected exposure patterns to be corrected.

摘要翻译： 一种曝光参数获取方法，包括使用曝光参数已经被使用的参考图案，通过以第一入射能量投射带电光束，在待曝光绝缘基板的表面区域处形成带电参考图案和多个带电曝光图案 预先知道的所有选择的曝光图案和所有要校正的所选择的曝光图案，基于包含二次电子的带电粒子，通过用带电束扫描绝缘基板的表面，形成用于带电参考图案的电子信号图像和多个带电曝光图案， 第二入射能量低于第一入射能量，并且基于电子信号图像创建曝光参数，其包括用于所有所选曝光图案的位置，焦点，像散，旋转和放大率中的至少一个， 被纠正

公开(公告)号：US20070114463A1

公开(公告)日：2007-05-24

申请号：US11583114

申请日：2006-10-19

申请人： Tetsuro Nakasugi ,  Ryoichi Inanami ,  Takumi Ota ,  Takeshi Koshiba

发明人： Tetsuro Nakasugi ,  Ryoichi Inanami ,  Takumi Ota ,  Takeshi Koshiba

IPC分类号： G21K5/10

CPC分类号： G03F1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

摘要翻译： 公开了一种带电粒子束曝光方法，其包括制备具有字符孔的孔径掩模，考虑至少一个因素，校正设计数据中设计图案的尺寸，例如带电粒子的前向散射距离，向后散射距离 带电粒子的模糊，带电粒子束的模糊，由于当使用抗蚀剂作为掩模时在底层被处理时引起的设计图案的致密度/粗糙度差造成的设计图案的尺寸转换差，以及 类似地，将孔径掩模的多个字符孔径的指定字符孔径的至少一部分分配给经校正的设计图案以产生写入数据，并将抗蚀剂暴露于穿过至少一部分的带电粒子的束 基于写入数据的指定字符孔径。

公开(公告)号：US07011915B2

公开(公告)日：2006-03-14

申请号：US10122393

申请日：2002-04-16

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： G03F9/00 ,  G06F15/46

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174 ,  Y10S430/143

摘要： An exposure parameter obtaining method comprising forming a charged reference pattern and a plurality of charged exposure patterns at a surface region of a to-be-exposed insulation substrate by projecting a charged beam with a first incident energy using a reference pattern whose exposure parameter has been known beforehand and all of selected exposure patterns to be corrected, forming electron signal images for the charged reference pattern and the plurality of charged exposure patterns on the basis of charged particles including secondary electrons by scanning the surface of the insulation substrate with a charged beam with a second incident energy lower than the first incident energy, and creating, on the basis of the electron signal images, the exposure parameters including at least one of position, focal point, astigmatism, rotation, and magnification for all of the selected exposure patterns to be corrected.

公开(公告)号：US06762421B2

公开(公告)日：2004-07-13

申请号：US10092161

申请日：2002-03-07

申请人： Tetsuro Nakasugi

发明人： Tetsuro Nakasugi

IPC分类号： H01J37304

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3045 ,  H01J2237/3175 ,  Y10S430/143

摘要： A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.

公开(公告)号：US6140654A

公开(公告)日：2000-10-31

申请号：US326631

申请日：1999-06-07

申请人： Tetsuro Nakasugi ,  Yumi Watanabe

发明人： Tetsuro Nakasugi ,  Yumi Watanabe

IPC分类号： G21K5/04 ,  G01Q60/00 ,  G03F7/20 ,  H01J37/04 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01J37/30 ,  H01J37/244

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/31774

摘要： A charged beam lithography method simultaneously uses multiple charged beams to irradiate a workpiece. In specific embodiments, collimators are employed to assist in aligning the multiple charged beams by eliminating "noise" from reflections of other beams. Each collimator is positioned to correspond with respective of the charged beams and detectors for detecting reflected particles from the charged beams. The particles are reflected from particular marks used in the alignment process. Each collimator helps to prevent particles from adjacent charged beams from entering a detector that corresponds with a specific charged beam

摘要翻译： 带电光束光刻法同时使用多个带电光束照射工件。 在具体实施例中，准直仪用于通过从其他光束的反射中消除“噪声”来帮助对准多个带电波束。 每个准直器被定位成对应于相应的带电束和检测器，用于检测来自带电束的反射粒子。 颗粒从对准过程中使用的特定标记反射。 每个准直器有助于防止相邻带电光束的粒子进入与特定带电束对应的检测器

公开(公告)号：US5989759A

公开(公告)日：1999-11-23

申请号：US30886

申请日：1998-02-26

申请人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

发明人： Atsushi Ando ,  Kazuyoshi Sugihara ,  Katsuya Okumura ,  Tetsuro Nakasugi

IPC分类号： G03F7/20 ,  H01J37/304 ,  H01J37/317 ,  H01L21/027 ,  G03F9/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/7045 ,  G03F7/70675 ,  H01J37/3045 ,  H01J37/3174 ,  Y10S430/143

摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.

摘要翻译： 为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。 在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。 根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。 结果，粗图案和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

公开(公告)号：US08202463B2

公开(公告)日：2012-06-19

申请号：US12426527

申请日：2009-04-20

申请人： Ikuo Yoneda ,  Tetsuro Nakasugi ,  Shinji Mikami

发明人： Ikuo Yoneda ,  Tetsuro Nakasugi ,  Shinji Mikami

IPC分类号： B29C59/00

CPC分类号： B29C37/006 ,  B29C35/0888 ,  B29C37/0053 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： An imprint method includes contacting a template on a first substrate. The template includes a pattern to be transferred on the first substrate. The first substrate includes a first semiconductor substrate, and a first light curable resin coated on the first semiconductor substrate. The method further includes separating the template from the first substrate, and removing particles adhered on the template. The particle removal includes: pressing the template on an adhesive member which is distinct from the first substrate. The adhesive member includes a dummy substrate, a particle removing film formed on the dummy substrate and configured to remove the particles, and a second light curable resin coated on the particle removing film. The second light curable resin is thicker than the first light curable resin.

摘要翻译： 压印方法包括在第一衬底上接触模板。 模板包括要在第一基板上转印的图案。 第一基板包括第一半导体基板和涂覆在第一半导体基板上的第一光固化树脂。 该方法还包括从第一基底分离模板，以及除去附着在模板上的颗粒。 颗粒去除包括：将模板压在与第一基板不同的粘合剂构件上。 所述粘合部件包括虚拟基板，形成在所述虚设基板上并构成为除去所述粒子的除粒膜，以及涂覆在所述除粒膜上的第二光固化树脂。 第二光固化树脂比第一光固化树脂厚。

公开(公告)号：US07889910B2

公开(公告)日：2011-02-15

申请号：US11797531

申请日：2007-05-04

申请人： Tetsuro Nakasugi ,  Takumi Ota ,  Takeshi Koshiba ,  Noriaki Sasaki

发明人： Tetsuro Nakasugi ,  Takumi Ota ,  Takeshi Koshiba ,  Noriaki Sasaki

IPC分类号： G06K9/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.

摘要翻译： 字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案，提取数量小于最大值的第一提取图案 以大量的读取字符图案的数量以参考时间数字的降序排列，将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案，从候选图案中选择多个候选图案， 数字对应于从最大数量提取的图案的数量之间的差异，以及创建所选择的候选图案的组合，以及提取包括在候选图案的组合中的组合中的第二提取图案，其中半导体器件的制造时间 最缩短。

公开(公告)号：US20100075443A1

公开(公告)日：2010-03-25

申请号：US12553906

申请日：2009-09-03

申请人： Ikuo YONEDA ,  Tetsuro Nakasugi ,  Masamitsu Itoh ,  Ryoichi Inanami

发明人： Ikuo YONEDA ,  Tetsuro Nakasugi ,  Masamitsu Itoh ,  Ryoichi Inanami

IPC分类号： H01L21/66 ,  G06K9/00

CPC分类号： G01N21/956 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

摘要： A template inspection method for performing defect inspection of a template, by bringing a pattern formation surface of a template used to form a pattern close to a first fluid coated on a flat substrate, filling the first fluid into a pattern of the template, and by performing optical observation of the template in a state that the first fluid is sandwiched between the template and the substrate, wherein a difference between an optical constant of the first fluid and an optical constant of the template is larger than a difference between an optical constant of air and the optical constant of the template.

摘要翻译： 一种用于对模板进行缺陷检查的模板检查方法，通过将用于形成图案的模板的图案形成表面靠近涂覆在平坦基板上的第一流体，将第一流体填充到模板的图案中，以及通过 在第一流体夹在模板和基板之间的状态下进行模板的光学观察，其中第一流体的光学常数与模板的光学常数之间的差异大于模板的光学常数之间的差异 空气和模板的光学常数。

公开(公告)号：US20090315223A1

公开(公告)日：2009-12-24

申请号：US12483705

申请日：2009-06-12

申请人： Ikuo Yoneda ,  Shinji Mikami ,  Takumi Ota ,  Tetsuro Nakasugi

发明人： Ikuo Yoneda ,  Shinji Mikami ,  Takumi Ota ,  Tetsuro Nakasugi

IPC分类号： B29C35/08 ,  B29C59/02

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

摘要： A template includes a substrate, an element pattern formed on a surface of the substrate, and a light absorbing portion formed on or inside the substrate.

摘要翻译： 模板包括基板，形成在基板的表面上的元件图案，以及形成在基板上或内部的光吸收部。