摘要:
A template includes a substrate, an element pattern formed on a surface of the substrate, and a light absorbing portion formed on or inside the substrate.
摘要:
An imprint method includes contacting a template on a first substrate. The template includes a pattern to be transferred on the first substrate. The first substrate includes a first semiconductor substrate, and a first light curable resin coated on the first semiconductor substrate. The method further includes separating the template from the first substrate, and removing particles adhered on the template. The particle removal includes: pressing the template on an adhesive member which is distinct from the first substrate. The adhesive member includes a dummy substrate, a particle removing film formed on the dummy substrate and configured to remove the particles, and a second light curable resin coated on the particle removing film. The second light curable resin is thicker than the first light curable resin.
摘要:
An imprint method includes contacting a template on a substrate, the template including a pattern to be transferred on the substrate, separating the template from the substrate, and removing particle adhered on the template before contacting the template on the substrate, the removing the particle including pressing the template on an adhesive member and separating the pressed template from the adhesive member, wherein adhesiveness of the adhesive member to the template is higher than adhesiveness of the adhesive member to the substrate.
摘要:
According to one embodiment, a mold includes a base material, a pedestal portion and a pattern portion. The base material includes a first surface and a second surface. The pedestal portion protruded from the first surface of the base material and includes a side surface. The pattern portion is provided in the pedestal portion and includes an concave-convex pattern. The pedestal portion includes a first region and a second region. The first region is provided with the concave-convex pattern. The second region is provided between the first region and the side surface. The second region has maximum height equal to maximum height of the first region. The second region has a first height of the second region on the side surface side and a second height of the second region on the first region side. The first height is lower than the second height.
摘要:
According to one embodiment, an imprint method is disclosed. The method can include forming a liquid droplet of a transfer material with a volume greater than a predetermined reference volume by dropping the transfer material onto a major surface of a processing substrate. The method can include reducing the volume of the liquid droplet to be less than the reference volume by volatilizing the liquid droplet. In addition, the method can include filling the transfer material into a recess provided in a transfer surface of a template by bringing the liquid droplet having the volume reduced to be less than the reference volume into contact with the transfer surface of the template.
摘要:
An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.
摘要:
A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.
摘要:
A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.
摘要:
A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.
摘要:
A pattern forming method includes determining an amount of curable resin to be formed on a substrate, the curable resin having volatility, the amount of the curable resin being determined by a calculation considering volatile loss of the curable resin, the calculation being performed for each of a plurality of regions of the substrate, forming the curable resin having the determined amount on the substrate, the forming the curable resin being performed for each of the plurality of regions of the substrate, contacting the curable resin formed on the substrate with a template, the template including a pattern to be filled with the curable resin by the contacting, and curing the curable resin under a condition where the curable resin is in contact with the template.