摘要:
A semiconductor device includes a first group III-V nitride semiconductor layer, a second group III-V nitride semiconductor layer having a larger band gap than the first group Ill-V nitride semiconductor layer and at least one ohmic electrode successively formed on a substrate. The ohmic electrode is formed so as to have a base portion penetrating the second group III-V nitride semiconductor layer and reaching a portion of the first group III-V nitride semiconductor layer disposed beneath a two-dimensional electron gas layer. An impurity doped layer is formed in portions of the first group III-V nitride semiconductor layer and the second group III-V nitride semiconductor layer in contact with the ohmic electrode.
摘要:
Data is read out from a disk in which the data is recorded in the perpendicular magnetic recording system by a head, amplified by a head preamplifier, and signal-processed by a read channel LSI. A read-out processing unit of a HDD controller sends out signals processed by the read channel LSI as an output of the perpendicular magnetic recording system. Further, a cut-off frequency controlling unit of the HDD controller determines a cut-off frequency of a high-pass filter of the head preamplifier based on a data transfer rate read out by the read-out processing unit, controls a cut-off frequency changing unit, and changes the value of the cut-off frequency.
摘要:
Data is read out from a disk in which the data is recorded in the perpendicular magnetic recording system by a head, amplified by a head preamplifier, and signal-processed by a read channel LSI. A read-out processing unit of a HDD controller sends out signals processed by the read channel LSI as an output of the perpendicular magnetic recording system. Further, a cut-off frequency controlling unit of the HDD controller determines a cut-off frequency of a high-pass filter of the head preamplifier based on a data transfer rate read out by the read-out processing unit, controls a cut-off frequency changing unit, and changes the value of the cut-off frequency.
摘要:
In a hot-dip zinc-coated steel sheet exhibiting excellent press die sliding characteristics and obtained by performing a molten galvanization and then skin pass rolling on a surface of the steel sheet, a galvanized layer has a three-dimensional average surface roughness ranging from 0.7 .mu.m to 1.4 .mu.m, and a skewness (S) of the amplitude probability distribution of the surface roughness, which is defined by the following equation (1), ranging from 0.1 to -0.3:S=.mu..sub.3 /.sigma..sup.3 (1)where.mu..sub.3 : Three-dimensional moment of the amplitude probability density.sigma.: Standard deviation of the amplitude probability density.
摘要翻译:在通过在钢板表面进行熔融镀锌,然后进行表皮轧制而获得的优异的压模滑动特性的热镀锌钢板中,镀锌层的三维平均表面粗糙度为0.7 (1)定义的表面粗糙度的振幅概率分布的偏度(S)为0.1〜-0.3:S = mu 3 / sigma 3(1) )其中mu 3:三维力矩的振幅概率密度σ:振幅概率密度的标准偏差。
摘要:
Novel corticoid 17.alpha.-alkoxycarbonyl carboxylate derivatives are disclosed. These derivatives have strong topical anti-inflammatory activity and extremely weak systemic adverse reactions and are useful for the treatment of acute and chronic eczema, eczema seborrhoicorum, contact dermatitis, atopic dermatitis, asthma, etc.
摘要:
A secondary battery pack of the present invention includes a secondary battery block 3 in which a plurality of unit blocks 2 are connected in series; battery adjustment sections 5 that are each provided for each of the unit blocks 2 and have a function of monitoring the voltage of secondary batteries and a function of adjusting the balance; a charge switch 8; and a discharge switch 9. The secondary battery pack includes transmission sections 17 that receive information from the corresponding battery adjustment sections 5. The transmission sections are connected to the preceding or subsequent transmission sections and are so set that at least either information input from the preceding transmission sections or information input from the battery adjustment sections 5 is output to the subsequent transmission sections. The transmission sections are equipped with a constant current transmission section that transmits with a constant value of current; and a current detection section that can detect the value of the constant current.
摘要:
A first calculation device is provided that calculates a ratio of a target torque equivalent value of an engine to a maximum torque equivalent value of the engine, as a pressure ratio equivalent value. A second calculation device is also provided that calculates a flow velocity of air to flowing through a throttle valve in the engine, based on the pressure ratio equivalent value calculated by the first calculation device. A third calculation device is further provided that calculates a target throttle valve opening, based on the flow velocity calculated by the second calculation device. With this configuration, the target opening of a throttle valve corresponding to the requested engine torque, without using the pressures before and after the throttle valve section.
摘要:
A secondary battery pack of the present invention includes a secondary battery block 3 in which a plurality of unit blocks 2 are connected in series; battery adjustment sections 5 that are each provided for each of the unit blocks 2 and have a function of monitoring the voltage of secondary batteries and a function of adjusting the balance; a charge switch 8; and a discharge switch 9. The secondary battery pack includes transmission sections 17 that receive information from the corresponding battery adjustment sections 5. The transmission sections are connected to the preceding or subsequent transmission sections and are so set that at least either information input from the preceding transmission sections or information input from the battery adjustment sections 5 is output to the subsequent transmission sections. The transmission sections are equipped with a constant current transmission section that transmits with a constant value of current; and a current detection section that can detect the value of the constant current.
摘要:
A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.