公开(公告)号：US06797982B2

公开(公告)日：2004-09-28

申请号：US09939479

申请日：2001-08-24

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L2904

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线都插入绝缘膜，与所有栅极线交叉。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

公开(公告)号：US06284576B1

公开(公告)日：2001-09-04

申请号：US09196229

申请日：1998-11-20

申请人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

发明人： Atsushi Ban ,  Hisataka Suzuki ,  Masaya Okamoto

IPC分类号： H01L2100

CPC分类号： H01L29/66765

摘要： A thin-film transistor of the reversed stagger type is provided with a gate electrode, first and second gate insulating films, a semiconductor layer, separated contact layers, and source electrodes and drain electrodes, all of which are stacked on a substrate. Upon manufacturing the thin-film transistor of this type, a gap section is pattered in a single contact-material layer. In this case, the contact-material layer is patterned by a dry etching with etching gases including HCl+SF6 or CF4+O2+HCl by the use of the source electrode and drain electrode as direct masks. Upon patterning a gap section in the contact-material layer between the source electrode and the drain electrode, no dedicated resist pattern is required; therefore, it is possible to reduce the number of the processes as compared with conventional manufacturing methods. Consequently, it becomes possible to reduce the production cost of thin-film transistors and also to improve the yield of desired products.

摘要翻译： 反向交错型薄膜晶体管设置有栅电极，第一和第二栅极绝缘膜，半导体层，分离的接触层以及源极和漏极，所有这些都堆叠在基板上。 在制造这种类型的薄膜晶体管时，在单个接触材料层中将间隙部分图案化。 在这种情况下，通过使用源电极和漏电极作为直接掩模的蚀刻气体，包括HCl + SF6或CF4 + O2 + HCl的干法蚀刻来对接触材料层进行构图。 在图案化源电极和漏电极之间的接触材料层中的间隙部分时，不需要专用抗蚀剂图案; 因此，与传统的制造方法相比，可以减少处理次数。 因此，可以降低薄膜晶体管的生产成本，并且还可以提高所需产品的产量。

公开(公告)号：US08711296B2

公开(公告)日：2014-04-29

申请号：US12671801

申请日：2008-08-04

申请人： Tetsunori Tanaka ,  Atsushi Ban ,  Tohru Senoo ,  Wataru Nakamura ,  Yukimine Shimada

发明人： Tetsunori Tanaka ,  Atsushi Ban ,  Tohru Senoo ,  Wataru Nakamura ,  Yukimine Shimada

IPC分类号： G02F1/136

CPC分类号： G02F1/1345 ,  H01L27/1244 ,  H01L27/1288

摘要： An active matrix substrate (30) of the present invention includes a substrate, a gate line (50) formed on the substrate, and an interlayer insulating layer (90) for insulating a layer formed on the gate line (50) from the gate line (50). In a region of the substrate, the interlayer insulating layer (90) is not provided on an upper surface of the gate line (50), and therefore, the upper surface is exposed. On the other hand, the insulating layer (90) is provided on the substrate so as to have contact with at least an edge face of the gate line (50) which edge face is on an extension of a longitudinal direction of the gate line (50).

摘要翻译： 本发明的有源矩阵基板（30）包括基板，形成在基板上的栅极线（50），以及用于使形成在栅极线（50）上的与栅极线（50）形成的层绝缘的层间绝缘层（90） （50）。 在基板的区域中，层间绝缘层（90）不设置在栅极线（50）的上表面上，因此露出上表面。 另一方面，绝缘层（90）设置在基板上，以便与栅极线（50）的至少边缘面接触，该边缘面在栅极线的纵向方向上的延伸部 50）。

公开(公告)号：US20120249610A1

公开(公告)日：2012-10-04

申请号：US13498149

申请日：2010-05-19

申请人： Masayuki Katagami ,  Atsushi Ban ,  Toshihide Tsubata ,  Takehisa Yoshida

发明人： Masayuki Katagami ,  Atsushi Ban ,  Toshihide Tsubata ,  Takehisa Yoshida

IPC分类号： G09G5/10

CPC分类号： G09G3/3648 ,  G02F1/133514 ,  G02F2201/52 ,  G09G3/3426 ,  G09G2320/0242 ,  G09G2320/0271 ,  G09G2320/0646

摘要： In the present display device with each pixel being composed of subpixels of four or more colors, a backlight data processing portion sets a backlight source luminance to be high enough to compensate for a display luminance reduction caused by a maximum luminance adjustment portion (332) multiplying input pixel data for G by an adjustment gain, such that the value of the input pixel data for G does not exceed the maximum pixel value, after a G correction portion (331) corrects the input pixel data for G to compensate for a display luminance reduction due to the area of (subpixel) G being half of others. Thus, it is possible to realize high color reproducibility and a high luminance as realized by conventional liquid crystal display devices with a three-color, RGB, pixel configuration.

摘要翻译： 在本显示装置中，每个像素由四个或更多个颜色的子像素组成，背光数据处理部分将背光源亮度设置得足够高以补偿由最大亮度调节部分（332）乘以的显示亮度降低 通过调整增益输入G的像素数据，使得在G校正部分（331）校正G的输入像素数据以补偿显示亮度之后，用于G的输入像素数据的值不超过最大像素值 （子像素）G的面积减少是其他的一半。 因此，可以实现具有三色，RGB像素构造的常规液晶显示装置实现的高色彩再现性和高亮度。

公开(公告)号：US20110003417A1

公开(公告)日：2011-01-06

申请号：US12807215

申请日：2010-08-31

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L21/336 ,  H01L33/02

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

摘要翻译： 有源矩阵基板包括基底，栅线，数据线，薄膜晶体管和像素电极。 栅极线形成在基底基板上。 数据线形成在栅极线上。 每条数据线与绝缘膜相交，跨越所有栅极线。 薄膜晶体管形成在基底基板上。 每个薄膜晶体管与一条栅极线路相关联，并且响应于相关联的栅极线上的信号而工作。 每个像素电极与数据线之一和薄膜晶体管中的一个相关联，并且可通过相关联的薄膜晶体管电连接到相关联的数据线。 每个像素电极和相关联的薄膜晶体管通过导电构件连接在一起。 每个像素电极与一条栅极线交叉，而用于像素电极的导电构件与另一条与前一栅极线相邻的栅极线交叉。

公开(公告)号：US07864281B2

公开(公告)日：2011-01-04

申请号：US11574087

申请日：2005-08-23

申请人： Wataru Nakamura ,  Atsushi Ban ,  Shoji Okazaki ,  Hiromitsu Katsui ,  Yoshihiro Okada

发明人： Wataru Nakamura ,  Atsushi Ban ,  Shoji Okazaki ,  Hiromitsu Katsui ,  Yoshihiro Okada

IPC分类号： G02F1/1333

CPC分类号： G02F1/136227 ,  G02F1/136286

摘要： An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.

摘要翻译： 有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件，每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。 绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。 第一绝缘层由含有有机成分的绝缘材料形成，并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域，第一绝缘层不形成在低电压 堆栈区域。 有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容，而不会导致布线电阻的增加或开关元件的驱动能力的劣化。

公开(公告)号：US20100214490A1

公开(公告)日：2010-08-26

申请号：US12095938

申请日：2006-07-28

申请人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

发明人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

IPC分类号： H04N5/44 ,  G09G3/20 ,  G02F1/1333

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/41733

摘要： An active matrix substrate includes a transistor, a pixel electrode, a drain lead electrode connected with the drain electrode of the transistor, and a contact hole connecting the drain lead electrode and the pixel electrode. A non-electrode through-bore portion is created on the drain lead electrode, and an opening of the contact hole crosses the through-bore portion. As a result, any changes or decreases in the contact area between the drain lead electrode and the pixel electrode may be prevented or reduced significantly, while the open area ratio can be improved.

摘要翻译： 有源矩阵基板包括晶体管，像素电极，与晶体管的漏极连接的漏极引线电极以及连接漏极引线电极和像素电极的接触孔。 在漏极引线电极上形成非电极通孔部分，并且接触孔的开口穿过通孔部分。 结果，可以显着地防止或降低漏极引线电极和像素电极之间的接触面积的任何变化或减小，同时可以提高开口面积比。

公开(公告)号：US20100167443A1

公开(公告)日：2010-07-01

申请号：US12658555

申请日：2010-02-11

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L33/00

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

公开(公告)号：US07696516B2

公开(公告)日：2010-04-13

申请号：US12283893

申请日：2008-09-16

申请人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

发明人： Yoshihiro Okada ,  Yuichi Saito ,  Shinya Yamakawa ,  Atsushi Ban ,  Masaya Okamoto ,  Hiroyuki Ohgami

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/1362 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： An active matrix substrate includes base substrate, gate lines, data lines, thin-film transistors and pixel electrodes. The gate lines are formed on the base substrate. The data lines are formed over the gate lines. Each of the data lines crosses all of the gate lines with an insulating film interposed therebetween. The thin-film transistors are formed over the base substrate. Each of the thin-film transistors is associated with one of the gate lines and operates responsive to a signal on the associated gate line. Each of the pixel electrodes is associated with one of the data lines and one of the thin-film transistors and is electrically connectable to the associated data line by way of the associated thin-film transistor. Each of the pixel electrodes and the associated thin-film transistor are connected together by way of a conductive member. Each of the pixel electrodes crosses one of the gate lines, while the conductive member for the pixel electrode crosses another one of the gate lines that is adjacent to the former gate line.

公开(公告)号：US20090153758A1

公开(公告)日：2009-06-18

申请号：US12097796

申请日：2006-07-28

申请人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

发明人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

IPC分类号： G02F1/133

CPC分类号： G02F1/136259 ,  G02F1/133707 ,  G02F2001/136263 ,  G02F2001/136268 ,  H01L27/124 ,  H01L27/1255 ,  H01L2924/19041

摘要： An active matrix substrate includes a transistor, a pixel electrode connected with one of the current-flowing electrodes of the transistor; a storage capacitor wiring; a lead wiring extending from one of the current-flowing electrodes of the transistor; and a repair wiring extending from the storage capacitor wiring. The repair wiring overlaps a portion of the lead wiring with an insulating layer interposed therebetween. As a result, TFT defects (for example, a short circuit between a source electrode and a drain electrode) can be repaired, and performance of fast display and reduction in electric power consumption can be realized.

摘要翻译： 有源矩阵基板包括晶体管，与晶体管的电流流动电极之一连接的像素电极; 存储电容器配线; 从晶体管的电流流动电极之一延伸的引线; 以及从保持电容配线延伸的修补布线。 修补布线与引线之间的绝缘层与引线的一部分重叠。 结果，可以修复TFT缺陷（例如，源电极和漏电极之间的短路），并且可以实现快速显示和降低功耗。