公开(公告)号：US09315609B2

公开(公告)日：2016-04-19

申请号：US14104304

申请日：2013-12-12

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: C08F299/02 ,  C08F299/04 ,  H01L21/311 ,  B81C1/00 ,  B82Y30/00 ,  H01L21/033 ,  G03F7/00

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了使用自组装嵌段共聚物制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20140308776A1

公开(公告)日：2014-10-16

申请号：US14313850

申请日：2014-06-24

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L45/00

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

Abstract translation: 形成其中具有锗和碲的相变材料的方法包括在基底上沉积含锗材料。 这种材料包括元素形式的锗。 将含气态碲前驱体流入含锗材料，并从气态前驱体中除去碲以与含锗材料中的元素形式的锗反应，形成含锗和碲化合物的相变材料 在基板上。 公开了其他实现。

公开(公告)号：US08716060B2

公开(公告)日：2014-05-06

申请号：US13894059

申请日：2013-05-14

Applicant: Micron Technology, Inc.

Inventor： Brenda D. Kraus ,  Eugene P. Marsh ,  Timothy A. Quick

IPC: H01L21/00

CPC classification number: H01L45/1616 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148

Abstract: Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in the via by performing a process that includes providing a germanium amidinate precursor and a first reactant to a process chamber having the memory cell structure therein and providing an antimony ethoxide precursor and a second reactant to the process chamber subsequent to removing excess germanium.

Abstract translation: 本文描述了限制性电阻变量存储单元结构和方法。 形成限制电阻可变存储单元结构的一种或多种方法包括在存储单元结构中形成通孔，并在通孔中形成电阻可变材料，通过执行包括向处理室提供锗酰脒前体和第一反应物的方法 在其中具有记忆单元结构并且在除去过量的锗之后向处理室提供锑乙醇前体和第二反应物。

公开(公告)号：US20140073084A1

公开(公告)日：2014-03-13

申请号：US14083084

申请日：2013-11-18

Applicant: Micron Technology, Inc.

Inventor： Eugene P. Marsh ,  Timothy A. Quick ,  Stefan Uhlenbrock

IPC: H01L45/00

CPC classification number: H01L45/144 ,  C23C16/28 ,  C23C16/305 ,  C23C16/45523 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1616 ,  H01L45/1683

Abstract: A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

公开(公告)号：US20130295717A1

公开(公告)日：2013-11-07

申请号：US13936957

申请日：2013-07-08

Applicant: Micron Technology, Inc.

Inventor： Timothy A. Quick ,  Eugene P. Marsh

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  C23C14/30 ,  C23C16/305 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148

Abstract: A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.

Abstract translation: 将包含锑的相变材料沉积到衬底上的方法包括向衬底提供还原剂和蒸发的Sb（OR）3，其中R是烷基，并且在衬底上形成来自含锑相变材料的衬底。 相变材料的氧含量不大于10原子％，除了锑之外，还包含另外的金属。