POWER AMPLIFIER MODULE
    51.
    发明申请

    公开(公告)号:US20190158039A1

    公开(公告)日:2019-05-23

    申请号:US16190861

    申请日:2018-11-14

    Abstract: A power amplifier module includes a first amplifier circuit that amplifies a radio frequency signal with a first gain corresponding to a first control signal to generate a first amplified signal; a second amplifier circuit that amplifies the first amplified signal with a second gain corresponding to a second control signal to generate a second amplified signal; and a control unit that generates the first control signal and the second control signal. The second control signal is a control signal for increasing a power-supply voltage for the second amplifier circuit as a peak-to-average power ratio of the radio frequency signal increases. The first control signal is a control signal for controlling the first gain of the first amplifier circuit so that a variation in the second gain involved in a variation in the power-supply voltage for the second amplifier circuit is compensated for.

    Compound semiconductor substrate and power amplifier module

    公开(公告)号:US10163829B2

    公开(公告)日:2018-12-25

    申请号:US15833098

    申请日:2017-12-06

    Abstract: A compound semiconductor substrate has a first main surface parallel to a first direction and a second direction perpendicular to the first direction, a second main surface located on a side opposite to the first main surface, and a recess. The recess has an opening, a bottom surface facing the opening, and a plurality of side surfaces located between the opening and the bottom surface. The side surfaces include at least one first side surface forming an angle of about θ degrees with the bottom surface in the recess and at least one second side surface forming an angle of about ϕ degrees with the bottom surface in the recess. The total length of edge lines between the first main surface and the at least one first side surface is larger than that of edge lines between the first main surface and the at least one second side surface.

    Heterojunction bipolar transistor with two base layers
    54.
    发明授权
    Heterojunction bipolar transistor with two base layers 有权
    具有两个基极层的异质结双极晶体管

    公开(公告)号:US09397204B2

    公开(公告)日:2016-07-19

    申请号:US14848090

    申请日:2015-09-08

    Abstract: A heterojunction bipolar transistor includes a collector layer composed of a semiconductor containing GaAs as a main component; a base layer including a first base layer and a second base layer the first base layer forming a heterojunction with the collector layer and being composed of a semiconductor containing a material as a main component, the material being lattice-mismatched to the main component of the collector layer, the first base layer having a film thickness less than a critical thickness at which a misfit dislocation is introduced, the second base layer being joined to the first base layer and composed of a semiconductor containing a material as a main component, and the material being lattice-matched to the main component of the collector layer; and an emitter layer that forms a heterojunction with the second base layer.

    Abstract translation: 异质结双极晶体管包括由包含GaAs作为主要成分的半导体构成的集电极层; 基底层,包括第一基底层和第二基底层,所述第一基底层与所述集电体层形成异质结,并且由包含材料作为主要成分的半导体构成,所述材料与所述第一基底层的主要成分晶格错配 所述第一基底层的膜厚小于引入失配位错的临界厚度,所述第二基底层被接合到所述第一基底层并且由包含材料作为主要成分的半导体构成, 材料与集电极层的主要成分晶格匹配; 以及与第二基极层形成异质结的发射极层。

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