-
公开(公告)号：US08912544B2
公开(公告)日：2014-12-16
申请号：US14173878
申请日：2014-02-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kaoru Hatano
IPC: H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/01 , H01L27/12 , H01L31/0392 , H01L27/32
CPC classification number: H01L27/3262 , H01L27/1225 , H01L27/3248 , H01L27/3258 , H01L2227/323 , H01L2227/326 , H01L2251/5338
Abstract: Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
-
公开(公告)号：US20140017834A1
公开(公告)日：2014-01-16
申请号：US14023515
申请日：2013-09-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kaoru Hatano
IPC: H01L27/12
CPC classification number: H01L27/124 , G02F1/1333 , G02F1/1343 , G02F1/136213 , G02F1/136227 , G02F2001/136231 , G02F2201/50 , H01L27/1225 , H01L27/1259 , H01L29/24 , H01L29/78618 , H01L29/7869 , H01L29/78696
Abstract: Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
Abstract translation: 提供一种制造液晶显示装置的方法，其中同时形成用于像素电极的电连接的接触孔和晶体管的源极和漏极之一以及用于半导体层的处理的接触孔。 该方法有助于减少摄影步骤。 晶体管包括其中形成沟道形成区的氧化物半导体层。
-
公开(公告)号：US12199107B2
公开(公告)日：2025-01-14
申请号：US18197805
申请日：2023-05-16
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kaoru Hatano
IPC: G02F1/1362 , G02F1/1333 , G02F1/1343 , H01L27/12 , H01L29/24 , H01L29/786
Abstract: Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
-
公开(公告)号：US12191312B2
公开(公告)日：2025-01-07
申请号：US18131905
申请日：2023-04-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Satoshi Seo , Kaoru Hatano
IPC: H01L27/12 , H01L33/50 , H01L33/58 , H10K59/124 , H10K59/38 , H01L29/786 , H10K50/125 , H10K50/13 , H10K50/80 , H10K59/12 , H10K71/80 , H10K102/00
Abstract: A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.
-
公开(公告)号：US11930668B2
公开(公告)日：2024-03-12
申请号：US17532302
申请日：2021-11-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kaoru Hatano , Satoshi Seo , Takaaki Nagata , Tatsuya Okano
IPC: H10K59/12 , H01L27/12 , H01L29/786 , H01L33/48 , H10K50/84 , H10K50/842 , H10K50/844 , H10K59/124 , H10K59/38 , H10K77/10 , G02F1/1362 , G06F1/16 , H01L33/42 , H10K50/125 , H10K50/828 , H10K50/86 , H10K59/30 , H10K71/80 , H10K101/00 , H10K102/00
CPC classification number: H10K59/124 , H01L27/1214 , H01L27/1266 , H01L29/78678 , H01L33/48 , H10K50/84 , H10K50/8423 , H10K50/8426 , H10K50/844 , H10K59/38 , H10K77/111 , G02F1/136209 , G02F1/136222 , G06F1/1641 , H01L27/1225 , H01L33/42 , H05K999/99 , H10K50/125 , H10K50/828 , H10K50/865 , H10K59/12 , H10K59/1201 , H10K59/30 , H10K71/80 , H10K2101/27 , H10K2102/311 , H10K2102/351 , Y02E10/549 , Y02P70/50
Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided.
-
Patent Agency Ranking
公开(公告)号：US11818925B2
公开(公告)日：2023-11-14
申请号：US17562085
申请日：2021-12-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Kaoru Hatano , Satoshi Seo , Shunpei Yamazaki
IPC: H04M1/02 , H10K59/127 , H10K50/84 , H10K59/122 , H10K59/124 , H10K71/50 , H10K77/10 , H10K59/12 , H10K102/00
CPC classification number: H10K59/127 , H04M1/0269 , H10K50/841 , H10K50/846 , H10K59/122 , H10K59/124 , H10K59/1275 , H10K71/50 , H10K77/111 , H10K59/1201 , H10K2102/311 , Y02E10/549 , Y02P70/50
Abstract: The invention relates to: a light-emitting device which includes a first flexible substrate having a first electrode, a light-emitting layer over the first electrode, and a second electrode with a projecting portion over the light-emitting layer and a second flexible substrate having a semiconductor circuit and a third electrode electrically connected to the semiconductor circuit, in which the projecting portion of the second electrode and the third electrode are electrically connected to each other; a method for manufacturing the light-emitting device; and a cellular phone which includes a housing incorporating the light-emitting device and having a longitudinal direction and a lateral direction, in which the light-emitting device is disposed on a horn side and in an upper portion in the longitudinal direction of the housing.
-
公开(公告)号：US11682678B2
公开(公告)日：2023-06-20
申请号：US17859054
申请日：2022-07-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kaoru Hatano
IPC: G02F1/1362 , H01L27/12 , G02F1/1333 , G02F1/1343 , H01L29/24 , H01L29/786
CPC classification number: H01L27/124 , G02F1/1333 , G02F1/1343 , G02F1/136213 , H01L27/1225 , H01L27/1259 , H01L29/24 , H01L29/7869 , H01L29/78618 , H01L29/78696 , G02F1/136227 , G02F1/136231 , G02F2201/50
Abstract: Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
-
公开(公告)号：US11417688B2
公开(公告)日：2022-08-16
申请号：US17331826
申请日：2021-05-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kaoru Hatano
IPC: G02F1/1362 , H01L27/12 , G02F1/1333 , G02F1/1343 , H01L29/24 , H01L29/786
Abstract: Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
-
公开(公告)号：US11024655B2
公开(公告)日：2021-06-01
申请号：US16724666
申请日：2019-12-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kaoru Hatano
IPC: G02F1/1362 , H01L27/12 , G02F1/1333 , G02F1/1343 , H01L29/24 , H01L29/786
Abstract: Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
-
公开(公告)号：US10910597B2
公开(公告)日：2021-02-02
申请号：US16925781
申请日：2020-07-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Kaoru Hatano
Abstract: An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.
-
-
-
-
-
-
-
-
-
Search Results
67
records
(took 0.039 seconds)
