公开(公告)号：US20230327095A1

公开(公告)日：2023-10-12

申请号：US18204451

申请日：2023-06-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Masahiro TAKAHASHI

IPC: H01M4/46 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/36 ,  C01G51/00 ,  H01M4/525 ,  H01M4/131 ,  H01M10/0525

CPC classification number: H01M4/466 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/366 ,  C01G51/42 ,  H01M4/525 ,  H01M4/625 ,  H01M4/131 ,  H01M10/0525 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2006/40 ,  C01P2002/00 ,  G01N23/2273

Abstract: Provided is a positive electrode active material for a lithium ion secondary battery having favorable cycle characteristics and high capacity. A covering layer containing aluminum and a covering layer containing magnesium are provided on a superficial portion of the positive electrode active material. The covering layer containing magnesium exists in a region closer to a particle surface than the covering layer containing aluminum is. The covering layer containing aluminum can be formed by a sol-gel method using an aluminum alkoxide. The covering layer containing magnesium can be formed as follows: magnesium and fluorine are mixed as a starting material and then subjected to heating after the sol-gel step, so that magnesium is segregated.

公开(公告)号：US20230327075A1

公开(公告)日：2023-10-12

申请号：US18204432

申请日：2023-06-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Ayae TSURUTA

IPC: H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/13915 ,  H01M4/134 ,  H01M4/36 ,  H01M4/525 ,  H01M4/86

CPC classification number: H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/625 ,  H01M2004/021 ,  H01M4/134 ,  H01M4/366 ,  H01M4/525 ,  H01M4/8657 ,  H01M4/13915

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US20230216079A1

公开(公告)日：2023-07-06

申请号：US18121065

申请日：2023-03-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Ayae TSURUTA ,  Masahiro TAKAHASHI

IPC: H01M4/583 ,  H01M10/0525 ,  H01M4/58 ,  H01M10/0568 ,  H01M10/0569

CPC classification number: H01M4/583 ,  H01M10/0525 ,  H01M4/5825 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2004/021

Abstract: Positive electrode active material particles that inhibit a decrease in capacity due to charge and discharge cycles are provided. A high-capacity secondary battery, a secondary battery with excellent charge and discharge characteristics, or a highly-safe or highly-reliable secondary battery is provided. A novel material, active material particles, and a storage device are provided. The positive electrode active material particle includes a first region and a second region in contact with the outside of the first region. The first region contains lithium, oxygen, and an element M that is one or more elements selected from cobalt, manganese, and nickel. The second region contains the element M, oxygen, magnesium, and fluorine. The atomic ratio of lithium to the element M (Li/M) measured by X-ray photoelectron spectroscopy is 0.5 or more and 0.85 or less. The atomic ratio of magnesium to the element M (Mg/M) is 0.2 or more and 0.5 or less.

公开(公告)号：US20230051128A1

公开(公告)日：2023-02-16

申请号：US17976925

申请日：2022-10-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Teruaki OCHIAI ,  Yohei MOMMA ,  Ayae TSURUTA

IPC: H01M4/36 ,  H01M4/505 ,  H01M4/525

Abstract: A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

公开(公告)号：US20220285681A1

公开(公告)日：2022-09-08

申请号：US17750436

申请日：2022-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi MIKAMI ,  Aya UCHIDA ,  Yumiko YONEDA ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Teruaki OCHIAI

IPC: H01M4/525 ,  C01G53/00 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/139 ,  H01M4/36 ,  H01M4/505 ,  H01M10/0525 ,  H01M6/16

Abstract: A positive electrode active material having high capacity and excellent cycle performance is provided. The positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charge and discharge as compared with those of a known positive electrode active material.

公开(公告)号：US20220285560A1

公开(公告)日：2022-09-08

申请号：US17679413

申请日：2022-02-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi KUNITAKE ,  Yasuhiro JINBO ,  Naoki OKUNO ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA

IPC: H01L29/786 ,  G09G3/32

Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

公开(公告)号：US20220285556A1

公开(公告)日：2022-09-08

申请号：US17749363

申请日：2022-05-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA ,  Junpei SUGAO ,  Hideki UOCHI ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L21/768 ,  H01L27/12 ,  H01L29/45 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324 ,  H01L29/24 ,  H01L29/423

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US20220200041A1

公开(公告)日：2022-06-23

申请号：US17689450

申请日：2022-03-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Ayae TSURUTA ,  Masahiro TAKAHASHI

IPC: H01M10/0525 ,  H01M4/505 ,  H01M4/485 ,  H01M4/02 ,  H01M4/525

Abstract: Positive electrode active material particles that inhibit a decrease in capacity due to charge and discharge cycles are provided. A high-capacity secondary battery, a secondary battery with excellent charge and discharge characteristics, or a highly-safe or highly-reliable secondary battery is provided. A novel material, active material particles, and a storage device are provided. The positive electrode active material particle includes a first region and a second region in contact with the outside of the first region. The first region contains lithium, oxygen, and an element M that is one or more elements selected from cobalt, manganese, and nickel. The second region contains the element M, oxygen, magnesium, and fluorine. The atomic ratio of lithium to the element M (Li/M) measured by X-ray photoelectron spectroscopy is 0.5 or more and 0.85 or less. The atomic ratio of magnesium to the element M (Mg/M) is 0.2 or more and 0.5 or less.

公开(公告)号：US20220131010A1

公开(公告)日：2022-04-28

申请号：US17430332

申请日：2020-02-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/24

Abstract: To provide a novel metal oxide. The metal oxide includes a first region and a second region. A third region is included between the first region and the second region. An interface of the first region is covered with the third region. The crystallinity of the third region is lower than the crystallinity of the first region. The crystallinity of the second region is lower than the crystallinity of the third region. The size of the first region measured from an image observed with a transmission electron microscope is greater than or equal to 1 nm and less than or equal to 3 nm.

公开(公告)号：US20220127713A1

公开(公告)日：2022-04-28

申请号：US17431275

申请日：2020-02-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA ,  Tomosato KANAGAWA ,  Shunpei YAMAZAKI

IPC: C23C14/34 ,  C23C14/08 ,  H01L21/66

Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.