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公开(公告)号：US08976578B2
公开(公告)日：2015-03-10
申请号：US13675725
申请日：2012-11-13
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
CPC classification number: G11C11/161 , Y10S977/933 , Y10S977/935
Abstract: A memory element has a layered configuration, including a memory layer in which a magnetization direction is changed corresponding to information; the magnetization direction being changed by applying a current in a lamination direction of the layered configuration to record the information in the memory layer, a magnetization-fixed layer in which a magnetization direction is fixed, an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, and a perpendicular magnetic anisotropy inducing layer, the memory layer including a first ferromagnetic layer, a first bonding layer, a second ferromagnetic layer, a second bonding layer and a third ferromagnetic layer laminated in the stated order.
Abstract translation: 存储元件具有分层结构，包括其中磁化方向根据信息而改变的存储层; 通过在分层结构的叠层方向上施加电流来改变磁化方向，以将信息记录在存储层中，磁化方向固定的磁化固定层，由非磁性材料形成的中间层 材料，并且设置在存储层和磁化固定层之间，以及垂直磁各向异性诱导层，所述存储层包括第一铁磁层，第一结合层，第二铁磁层，第二结合层和第三铁磁性层 层以所述顺序层压。
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公开(公告)号：US20140346626A1
公开(公告)日：2014-11-27
申请号：US14456429
申请日：2014-08-11
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: H01L43/10
CPC classification number: G11C11/161 , G11C11/15 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.
Abstract translation: 根据一些方面，分层结构包括存储层，磁化固定层和隧道绝缘层。 存储层具有垂直于膜面的磁化，其中通过在分层结构的层叠方向上施加电流，磁化方向被配置为根据信息而被改变。 磁化固定层具有与存储层的磁化方向平行或反平行的磁化，并且包括包括多个铁磁层和一个或多个非磁性层的层叠铁极化结构，并且包括包含反铁磁性材料的层 位于第一铁磁层和非磁性层之间的多个铁磁层的第一铁磁层。 隧道绝缘层位于存储层和磁化固定层之间。
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公开(公告)号：US20140225207A1
公开(公告)日：2014-08-14
申请号：US14256413
申请日：2014-04-18
Applicant: Sony Corporation
Inventor： Kuzutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
CPC classification number: H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L27/224 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: Disclosed herein is a magnetic storage element including: a reference layer configured to have a magnetization direction fixed to a predetermined direction; a recording layer configured to have a magnetization direction that changes due to spin injection in a direction corresponding to recording information; an intermediate layer configured to separate the recording layer from the reference layer; and a heat generator configured to heat the recording layer. A material of the recording layer is such a magnetic material that magnetization at 150° C. is at least 50% of magnetization at a room temperature and magnetization at a temperature in a range from 150° C. to 200° C. is in a range from 10% to 80% of magnetization at a room temperature.
Abstract translation: 这里公开了一种磁存储元件，包括：参考层，其被配置为具有固定到预定方向的磁化方向; 记录层，被配置为具有在与记录信息相对应的方向上由于自旋注入而改变的磁化方向; 中间层，被配置为将记录层与参考层分离; 以及被配置为加热记录层的发热体。 记录层的材料是这样一种磁性材料，其在150℃下的磁化是在室温下的磁化强度至少为50％，并且在150℃至200℃范围内的温度下的磁化处于 在室温下磁化强度为10％至80％。
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公开(公告)号：US08699264B2
公开(公告)日：2014-04-15
申请号：US13680558
申请日：2012-11-19
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: G11C11/00
CPC classification number: H01L43/08 , G11C11/15 , G11C11/16 , G11C11/161 , H01L27/228 , H01L43/02
Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.
Abstract translation: 存储元件具有分层结构，包括具有垂直于磁化方向根据信息而变化的膜面的磁化的存储层，并且包括Co-Fe-B磁性层，通过施加磁化方向来改变磁化方向 分层结构的层叠方向上的电流以将信息记录在存储层中，具有垂直于成为存储在存储层中的信息的基底的膜面的磁化的磁化固定层和形成的中间层 并且设置在存储层和磁化固定层之间，第一氧化物层和第二氧化物层。
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公开(公告)号：US20130307100A1
公开(公告)日：2013-11-21
申请号：US13950370
申请日：2013-07-25
Applicant: Sony Corporation
Inventor： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane , Hiroyuki Uchida
CPC classification number: H01L43/02 , G11C11/161 , G11C11/1675 , H01L27/228 , H01L29/66007 , H01L29/82 , H01L43/08 , H01L43/12
Abstract: A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof.
Abstract translation: 一种磁存储器件，包括在层表面上具有垂直磁化的存储层，其磁化方向根据信息而改变; 以及对存储层提供的参考层，并且是在层表面上具有垂直磁化的信息的基础，其中存储器件通过在电流流动时产生的自旋转矩反转存储层的磁化来存储信息 在由记忆层，非磁化层和参考层制成的层之间，存储层在记忆温度下的矫顽力为室温下的矫顽力的0.7倍以下，导热系数为 在层表面方向上形成在存储层的一侧的电极低于其周围的导热率。
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Patent Agency Ranking
公开(公告)号：US11527261B2
公开(公告)日：2022-12-13
申请号：US17181052
申请日：2021-02-22
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: G11B5/31 , H01F10/32 , G11B5/39 , G11C11/16 , H01L43/10 , H01L43/08 , H01L43/02 , G11B5/127 , H01L23/528 , H01L27/22 , H01F10/12 , B82Y25/00
Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.
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公开(公告)号：US11430497B2
公开(公告)日：2022-08-30
申请号：US16836063
申请日：2020-03-31
Applicant: SONY CORPORATION
Inventor： Hiroyuki Ohmori , Masanori Hosomi , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
Abstract: There is provided a magnetic storage element including: a storage layer; a reference layer provided at least one surface side of the storage layer with a non-magnetic layer in between; a magnetization fixation layer provided at a surface side opposite to a surface of the reference layer at which the storage layer is provided, with a non-magnetic layer in between; and a magnetization assist layer provided at a surface side opposite to a surface of the magnetization fixation layer at which the reference layer is provided, with a non-magnetic layer in between, in which change in a magnetization direction is easier than in the storage layer.
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公开(公告)号：US20210057010A1
公开(公告)日：2021-02-25
申请号：US17090321
申请日：2020-11-05
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
Abstract: A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.
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公开(公告)号：US20200251651A1
公开(公告)日：2020-08-06
申请号：US16853157
申请日：2020-04-20
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida , Tetsuya Asayama
Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.
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公开(公告)号：US10692521B2
公开(公告)日：2020-06-23
申请号：US16593687
申请日：2019-10-04
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
IPC: G11B5/31 , H01F10/32 , G11B5/39 , G11C11/16 , H01L43/10 , H01L43/08 , H01L43/02 , G11B5/127 , H01L23/528 , H01L27/22 , H01F10/12 , B82Y25/00
Abstract: A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.
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