Organic light-emitting display device and method of manufacturing the same

    公开(公告)号:US10424627B2

    公开(公告)日:2019-09-24

    申请号:US15834108

    申请日:2017-12-07

    Abstract: An organic light-emitting display device includes a first pixel electrode, a second pixel electrode, a pixel-defining layer disposed on the first pixel electrode and the second pixel electrode and exposing at least portions of the first pixel electrode and the second pixel electrode, a first stack disposed on the exposed portion of the first pixel electrode, a first protective layer, a second stack disposed on the exposed portion of the second pixel electrode, and a first inorganic conductive layer. The first stack includes a first intermediate layer including an emission layer and a first opposite electrode on the first intermediate layer. The first protective layer is disposed on the first stack. The second stack includes a second intermediate layer including an emission layer and a second opposite electrode on the second intermediate layer. The first inorganic conductive layer is disposed between the second pixel electrode and the second stack.

    Thin film transistor substrate and organic light-emitting diode (OLED) display having the same
    56.
    发明授权
    Thin film transistor substrate and organic light-emitting diode (OLED) display having the same 有权
    薄膜晶体管基板和具有相同的有机发光二极管(OLED)显示器

    公开(公告)号:US09425251B2

    公开(公告)日:2016-08-23

    申请号:US14278235

    申请日:2014-05-15

    Abstract: A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor substrate. The thin film transistor substrate includes a substrate, a source electrode formed over the substrate, a drain electrode formed over the substrate and spaced apart from the source electrode, an oxide semiconductor layer, and a gate electrode. The oxide semiconductor layer includes a source area at least partially overlapping the source electrode, a drain area at least partially overlapping the drain electrode, and a channel area formed between the source area and the drain area. The gate electrode, which is insulated from the oxide semiconductor layer, has a first width at a first end thereof, a second width at a second end opposite to the first end thereof and the first width is different from the second width.

    Abstract translation: 公开了薄膜晶体管基板和有机发光二极管(OLED)显示器。 在一个方面,OLED包括薄膜晶体管衬底。 薄膜晶体管基板包括基板,形成在基板上的源电极,形成在基板上并与源电极间隔开的漏电极,氧化物半导体层和栅电极。 氧化物半导体层包括至少部分地与源电极重叠的源极区域,至少部分地与漏极电极重叠的漏极区域和在源极区域和漏极区域之间形成的沟道区域。 与氧化物半导体层绝缘的栅电极在其第一端具有第一宽度,在与其第一端相对的第二端处具有第二宽度,并且第一宽度不同于第二宽度。

    THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY HAVING THE SAME
    57.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY HAVING THE SAME 有权
    薄膜晶体管基板和有机发光二极管(OLED)显示器

    公开(公告)号:US20150129844A1

    公开(公告)日:2015-05-14

    申请号:US14278235

    申请日:2014-05-15

    Abstract: A thin film transistor substrate and an organic light-emitting diode (OLED) display are disclosed. In one aspect, the OLED includes a thin film transistor substrate. The thin film transistor substrate includes a substrate, a source electrode formed over the substrate, a drain electrode formed over the substrate and spaced apart from the source electrode, an oxide semiconductor layer, and a gate electrode. The oxide semiconductor layer includes a source area at least partially overlapping the source electrode, a drain area at least partially overlapping the drain electrode, and a channel area formed between the source area and the drain area. The gate electrode, which is insulated from the oxide semiconductor layer, has a first width at a first end thereof, a second width at a second end opposite to the first end thereof and the first width is different from the second width.

    Abstract translation: 公开了薄膜晶体管基板和有机发光二极管(OLED)显示器。 在一个方面,OLED包括薄膜晶体管衬底。 薄膜晶体管基板包括基板,形成在基板上的源电极,形成在基板上并与源电极间隔开的漏电极,氧化物半导体层和栅电极。 氧化物半导体层包括至少部分地与源电极重叠的源极区域,至少部分地与漏极电极重叠的漏极区域和在源极区域和漏极区域之间形成的沟道区域。 与氧化物半导体层绝缘的栅电极在其第一端具有第一宽度,在与其第一端相对的第二端处具有第二宽度,并且第一宽度不同于第二宽度。

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