公开(公告)号：US20250040250A1

公开(公告)日：2025-01-30

申请号：US18790447

申请日：2024-07-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US20250008818A1

公开(公告)日：2025-01-02

申请号：US18711284

申请日：2022-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukinori SHIMA ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Yasutaka NAKAZAWA ,  Naoto GOTO ,  Saki EGUCHI ,  Sachiko KATANIWA

IPC: H10K59/80 ,  H10K39/00 ,  H10K59/12 ,  H10K59/95

Abstract: A display apparatus with extremely high resolution is provided. A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting element and a second light-emitting element over a first insulating layer, a second insulating layer, and a third insulating layer. The first light-emitting element includes a first pixel electrode and a first organic layer. The second light-emitting element includes a second pixel electrode and a second organic layer. The first insulating layer includes a groove-like region provided along a side of the first pixel electrode in a plan view. The groove-like region includes a first region overlapping with the first pixel electrode and a second region overlapping with the second pixel electrode. The first region and the second region each have a width greater than or equal to 20 nm and less than or equal to 500 nm. The second insulating layer includes a region in contact with a top surface of the first organic layer, a region in contact with a side surface of the first organic layer, and a region located below the first pixel electrode. The third insulating layer includes a region in contact with a top surface of the second organic layer, a region in contact with a side surface of the second organic layer, and a region located below the second pixel electrode.

公开(公告)号：US20240292697A1

公开(公告)日：2024-08-29

申请号：US18689899

申请日：2022-09-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro KATAYAMA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Shingo EGUCHI ,  Daiki NAKAMURA ,  Koji KUSUNOKI

IPC: H10K59/32 ,  G09G3/3233 ,  H10K59/131 ,  H10K59/38 ,  H10K59/80

CPC classification number: H10K59/32 ,  H10K59/131 ,  H10K59/38 ,  H10K59/805 ,  G09G3/3233 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2320/0223

Abstract: A display device in which a voltage drop is inhibited adequately is provided. The display device includes a first light-emitting device including a first light-emitting layer, a first charge-generation layer over the first light-emitting layer, and a second light-emitting layer over the first charge-generation layer; a first color filter overlapping with the first light-emitting device; a second light-emitting device including a third light-emitting layer, a second charge-generation layer over the third light-emitting layer, and a fourth light-emitting layer over the second charge-generation layer; a second color filter overlapping with the second light-emitting device; a common electrode included in the first light-emitting device and the second light-emitting device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring includes a first wiring layer and a second wiring layer, the second wiring layer is electrically connected to the first wiring layer through a contact hole of an insulating layer, and the second wiring layer has a lattice shape in a top view.

公开(公告)号：US20240224676A1

公开(公告)日：2024-07-04

申请号：US18607654

申请日：2024-03-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hisao IKEDA ,  Masataka NAKADA ,  Tomoya AOYAMA

IPC: H10K59/131 ,  H10K59/00 ,  H10K59/121

CPC classification number: H10K59/131 ,  H10K59/00 ,  H10K59/121

Abstract: A display panel is provided. The display panel includes a display region, a functional layer, a first insulating film, and a first conductive film; the display region includes a pixel; the pixel includes a display element and a pixel circuit; the display element includes a first electrode and a second electrode; the second electrode includes a first opening portion; the functional layer includes the pixel circuit, a second opening portion, and an auxiliary wiring; the pixel circuit is electrically connected to the display element in the second opening portion; the auxiliary wiring includes a region overlapping with the first opening portion; the first insulating film includes a third opening portion; the third opening portion includes a region overlapping with the first opening portion; and the first conductive film is electrically connected to the second electrode and the auxiliary wiring in the third opening portion.

公开(公告)号：US20230343875A1

公开(公告)日：2023-10-26

申请号：US18208101

申请日：2023-06-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L29/786 ,  H01L27/146 ,  H10K59/121 ,  H01L27/12 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/78645 ,  H01L29/78696 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14634 ,  H10K59/1216 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78648

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US20220320340A1

公开(公告)日：2022-10-06

申请号：US17629802

申请日：2020-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoto GOTO ,  Naoki IKEZAWA ,  Masataka NAKADA ,  Ami SATO ,  Chieko MISAWA

IPC: H01L29/786 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer over the semiconductor layer, and a conductive layer over the first insulating layer. The semiconductor layer includes a first region, a pair of second regions, a pair of third regions, and a pair of fourth regions. The second regions sandwich the first region, the third regions sandwich the first region and the second regions, and the fourth regions sandwich the first region, the second regions, and the third regions. The first region includes a region overlapping with the first insulating layer and the conductive layer, the second regions and the third regions each include a region overlapping with the first insulating layer and not overlapping with the conductive layer, and the fourth regions overlap with neither the first insulating layer nor the conductive layer. A thickness of the first insulating layer in regions overlapping with the second regions is substantially equal to a thickness of the first insulating layer in a region overlapping with the first region. A thickness of the first insulating layer in regions overlapping with the third regions is smaller than the thickness of the first insulating layer in the regions overlapping with the second regions.

公开(公告)号：US20220293641A1

公开(公告)日：2022-09-15

申请号：US17830546

申请日：2022-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Daisuke KUROSAKI ,  Masataka NAKADA ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786

Abstract: A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor provided in a driver circuit portion and a second transistor provided in a pixel portion; the first transistor and the second transistor have different structures. Furthermore, the first transistor and the second transistor are transistors having a top-gate structure. In an oxide semiconductor film of each of the transistors, an impurity element is contained in regions which do not overlap with a gate electrode. The regions of the oxide semiconductor film which contain the impurity element function as low-resistance regions. Furthermore, the regions of the oxide semiconductor film which contain the impurity element are in contact with a film containing hydrogen. The first transistor provided in the driver circuit portion includes two gate electrodes between which the oxide semiconductor film is provided.

公开(公告)号：US20220020781A1

公开(公告)日：2022-01-20

申请号：US17392766

申请日：2021-08-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L27/146 ,  H01L29/49

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulting film is provided between the first and the second conductive films.

公开(公告)号：US20210384314A1

公开(公告)日：2021-12-09

申请号：US17286530

申请日：2019-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yukinori SHIMA ,  Masataka NAKADA ,  Takumi SHIGENOBU

IPC: H01L29/49 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device capable of high-voltage driving is provided. A semiconductor device in which a large amount of current can flow is provided. The semiconductor device has a structure including a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, a conductive layer, and an insulating region. The metal oxide layer is positioned between the first insulating layer and the conductive layer. The insulating region is adjacent to the metal oxide layer and is positioned between the first insulating layer and the conductive layer. The semiconductor layer includes a first region in contact with the first insulating layer and overlapping with the metal oxide layer and the conductive layer with the first insulating layer therebetween, a second region in contact with the first insulating layer and overlapping with the insulating region and the conductive layer with the first insulating layer therebetween, a third region in contact with the first insulating layer, and a fourth region in contact with the second insulating layer. The insulating region shows a different permittivity from the first insulating layer.

公开(公告)号：US20210183990A1

公开(公告)日：2021-06-17

申请号：US17269042

申请日：2019-08-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hisao IKEDA ,  Masataka NAKADA ,  Tomoya AOYAMA

IPC: H01L27/32

Abstract: A display panel is provided. In addition, a display device is provided. Furthermore, an input/output device is provided. Furthermore, a data processing device is provided. The display panel includes a display region, a functional layer, a first insulating film, and a first conductive film; the display region includes a pixel; the pixel includes a display element and a pixel circuit; the display element includes a region sandwiched between the first insulating film and the functional layer; the display element includes a first electrode and a second electrode; the first electrode includes a region sandwiched between the second electrode and the functional layer; the second electrode includes a first opening portion; the functional layer includes the pixel circuit, a second opening portion, and an auxiliary wiring; the pixel circuit is electrically connected to the display element in the second opening portion; the auxiliary wiring includes a region overlapping with the first opening portion; the first insulating film includes a third opening portion; the third opening portion includes a region overlapping with the first opening portion; and the first conductive film is electrically connected to the second electrode and the auxiliary wiring in the third opening portion.