公开(公告)号：US20170194503A1

公开(公告)日：2017-07-06

申请号：US15462229

申请日：2017-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro KATAYAMA ,  Chieko MISAWA ,  Yuka YOKOYAMA ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606

Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

公开(公告)号：US20170018578A1

公开(公告)日：2017-01-19

申请号：US15281165

申请日：2016-09-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro KATAYAMA ,  Ami SATO ,  Yukinori SHIMA

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/786

CPC classification number: H01L27/1255 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2201/121 ,  G02F2201/123 ,  G06F3/0412 ,  H01L27/0629 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device includes a transistor including a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, and a pixel electrode electrically connected to the transistor. In the capacitor, a conductive film formed on the same surface as the light-transmitting semiconductor film in the transistor serves as one electrode, the pixel electrode serves as the other electrode, and a nitride insulating film and a second oxide insulating film which are provided between the light-transmitting semiconductor film and the pixel electrode serve as the a dielectric film.

Abstract translation: 提供了一种包括具有增加的充电容量而不减小开口率的电容器的半导体器件。 半导体器件包括晶体管，其包括透光半导体膜，在一对电极之间设置电介质膜的电容器和与该晶体管电连接的像素电极。 在电容器中，与晶体管中的透光半导体膜形成在同一表面上的导电膜用作一个电极，像素电极用作另一个电极，并且提供氮化物绝缘膜和第二氧化物绝缘膜 在透光半导体膜和像素电极之间用作电介质膜。

公开(公告)号：US20150221679A1

公开(公告)日：2015-08-06

申请号：US14612817

申请日：2015-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Masahiro KATAYAMA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L28/60 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.

Abstract translation: 半导体器件包括晶体管和电容器。 晶体管包括第一导电膜; 包括含有氢的膜的第一绝缘膜; 包括氧化物绝缘膜的第二绝缘膜; 包括第一区域和一对第二区域的氧化物半导体膜; 一对电极; 栅极绝缘膜; 和第二导电膜。 电容器包括下电极，电极间绝缘膜和上电极。 下电极含有与第一导电膜相同的材料。 电极间绝缘膜包括含有与第一绝缘膜相同的材料的第三绝缘膜和含有与栅极绝缘膜相同的材料的第四绝缘膜。 上部电极含有与第二导电膜相同的材料。 在晶体管上提供包含氢的第五绝缘膜。

公开(公告)号：US20140306219A1

公开(公告)日：2014-10-16

申请号：US14246418

申请日：2014-04-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Takashi HAMOCHI

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255

Abstract: Provided is a semiconductor device including a resistor having an oxide semiconductor and a transistor having an oxide semiconductor over the same substrate. The semiconductor device includes the resistor and the transistor over the same substrate. The resistor includes at least a first oxide semiconductor layer. The transistor includes at least a second oxide semiconductor layer. The first oxide semiconductor layer and the second oxide semiconductor layer have the same composition, and the carrier density of the first oxide semiconductor layer is higher than the carrier density of the second oxide semiconductor layer. The carrier density of the first oxide semiconductor layer is higher than the carrier density of the second oxide semiconductor layer because the first oxide semiconductor layer is subjected to treatment for increasing oxygen vacancies and/or impurity concentration in the first oxide semiconductor layer.

Abstract translation: 提供了一种半导体器件，其包括在同一衬底上具有氧化物半导体的电阻器和具有氧化物半导体的晶体管。 半导体器件在同一衬底上包括电阻器和晶体管。 电阻器至少包括第一氧化物半导体层。 晶体管至少包括第二氧化物半导体层。 第一氧化物半导体层和第二氧化物半导体层具有相同的组成，并且第一氧化物半导体层的载流子密度高于第二氧化物半导体层的载流子密度。 由于第一氧化物半导体层经受用于增加第一氧化物半导体层中的氧空位和/或杂质浓度的处理，所以第一氧化物半导体层的载流子密度高于第二氧化物半导体层的载流子密度。

公开(公告)号：US20250017050A1

公开(公告)日：2025-01-09

申请号：US18709968

申请日：2022-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro KATAYAMA ,  Naoto GOTO ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K50/13 ,  H10K59/80

Abstract: A display device in which crosstalk is inhibited is provided. The display device includes a first insulating layer including a first region and a second region having a lower top surface level than the first region, a second insulating layer including a region overlapping with the first region, a light-emitting device including a region overlapping with the first region with the second insulating layer therebetween, a stack including a region overlapping with the second region, and a third insulating layer including a region overlapping with the stack; the second insulating layer includes a protruding portion overlapping with the second region; the light-emitting device includes at least a light-emitting layer, a first upper electrode over the light-emitting layer, and a second upper electrode over the first upper electrode; the second upper electrode includes a region overlapping with the third insulating layer; and the stack contains the same material as the light-emitting layer.

公开(公告)号：US20240292697A1

公开(公告)日：2024-08-29

申请号：US18689899

申请日：2022-09-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro KATAYAMA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Shingo EGUCHI ,  Daiki NAKAMURA ,  Koji KUSUNOKI

IPC: H10K59/32 ,  G09G3/3233 ,  H10K59/131 ,  H10K59/38 ,  H10K59/80

CPC classification number: H10K59/32 ,  H10K59/131 ,  H10K59/38 ,  H10K59/805 ,  G09G3/3233 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2320/0223

Abstract: A display device in which a voltage drop is inhibited adequately is provided. The display device includes a first light-emitting device including a first light-emitting layer, a first charge-generation layer over the first light-emitting layer, and a second light-emitting layer over the first charge-generation layer; a first color filter overlapping with the first light-emitting device; a second light-emitting device including a third light-emitting layer, a second charge-generation layer over the third light-emitting layer, and a fourth light-emitting layer over the second charge-generation layer; a second color filter overlapping with the second light-emitting device; a common electrode included in the first light-emitting device and the second light-emitting device; and an auxiliary wiring electrically connected to the common electrode. The auxiliary wiring includes a first wiring layer and a second wiring layer, the second wiring layer is electrically connected to the first wiring layer through a contact hole of an insulating layer, and the second wiring layer has a lattice shape in a top view.

公开(公告)号：US20230343875A1

公开(公告)日：2023-10-26

申请号：US18208101

申请日：2023-06-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L29/786 ,  H01L27/146 ,  H10K59/121 ,  H01L27/12 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/78645 ,  H01L29/78696 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14634 ,  H10K59/1216 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78648

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US20220020781A1

公开(公告)日：2022-01-20

申请号：US17392766

申请日：2021-08-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L27/146 ,  H01L29/49

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulting film is provided between the first and the second conductive films.

公开(公告)号：US20210013239A1

公开(公告)日：2021-01-14

申请号：US17028014

申请日：2020-09-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L29/49

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US20180102086A1

公开(公告)日：2018-04-12

申请号：US15725468

申请日：2017-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Daisuke KUROSAKI ,  Kenichi OKAZAKI ,  Junichi KOEZUKA

IPC: G09G3/30 ,  H01L27/32 ,  H01L29/786 ,  H01L29/417

CPC classification number: G09G3/30 ,  G09G3/3659 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2330/021 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2227/323

Abstract: The number of lithography processes is reduced and a high-definition display device is provided. The display device includes a pixel portion and a driver circuit for driving the pixel portion. The pixel portion includes a first transistor and a pixel electrode electrically connected to the first transistor. The driver circuit includes a second transistor and a connection portion. The second transistor includes a metal oxide film, first and second gate electrodes that face each other with the metal oxide film positioned therebetween, source and drain electrodes over and in contact with the metal oxide film, and a first wiring connecting the first and second gate electrodes. The connection portion includes a second wiring on the same surface as the first gate electrode, a third wiring on the same surface as the source electrode and the drain electrode, and a fourth wiring connecting the second wiring and the third wiring. The pixel electrode, the first wiring, and the fourth wiring are formed using the same layer.