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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210384314A1

    公开(公告)日：2021-12-09

    申请号：US17286530

    申请日：2019-10-28

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Yukinori SHIMA ,  Masataka NAKADA ,  Takumi SHIGENOBU

    IPC: H01L29/49 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device capable of high-voltage driving is provided. A semiconductor device in which a large amount of current can flow is provided. The semiconductor device has a structure including a semiconductor layer, a first insulating layer, a second insulating layer, a metal oxide layer, a conductive layer, and an insulating region. The metal oxide layer is positioned between the first insulating layer and the conductive layer. The insulating region is adjacent to the metal oxide layer and is positioned between the first insulating layer and the conductive layer. The semiconductor layer includes a first region in contact with the first insulating layer and overlapping with the metal oxide layer and the conductive layer with the first insulating layer therebetween, a second region in contact with the first insulating layer and overlapping with the insulating region and the conductive layer with the first insulating layer therebetween, a third region in contact with the first insulating layer, and a fourth region in contact with the second insulating layer. The insulating region shows a different permittivity from the first insulating layer.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220013667A1

    公开(公告)日：2022-01-13

    申请号：US17288675

    申请日：2019-10-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masataka NAKADA ,  Takahiro IGUCHI ,  Yasuharu HOSAKA ,  Takumi SHIGENOBU

    IPC: H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/66

    Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a metal oxide layer, a conductive layer, and an insulating region. The first insulating layer covers a top surface and a side surface of the semiconductor layer, and the conductive layer is positioned over the first insulating layer. The metal oxide layer is positioned between the first insulating layer and the conductive layer, and an end portion of the metal oxide layer is positioned on an inner side than an end portion of the conductive layer. The insulating region is positioned adjacent to the metal oxide layer and positioned between the first insulating layer and the conductive layer. Furthermore, the semiconductor layer includes a first region, a pair of second regions, and a pair of third regions. The first region overlaps with the metal oxide layer and the conductive layer. The second regions are positioned to put the first region sandwiched therebetween and to overlap with the insulating region and the conductive layer. The third regions are positioned to the first region and the pair of second regions sandwiched therebetween and not to overlap with the conductive layer. The third regions preferably include a portion having lower resistance than the first region. The second regions preferably include a portion having higher resistance than the third regions.

    SEMICONDUCTOR DEVICE
    4.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230420571A1

    公开(公告)日：2023-12-28

    申请号：US18367700

    申请日：2023-09-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yukinori SHIMA ,  Masakatsu OHNO ,  Takumi SHIGENOBU

    IPC: H01L29/786 ,  H01L29/51 ,  H01L21/02

    CPC classification number: H01L29/7869 ,  H01L29/78618 ,  H01L29/513 ,  H01L21/02164

    Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220093802A1

    公开(公告)日：2022-03-24

    申请号：US17536526

    申请日：2021-11-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yukinori SHIMA ,  Masakatsu OHNO ,  Takumi SHIGENOBU

    IPC: H01L29/786 ,  H01L29/51 ,  H01L21/02

    Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210020782A1

    公开(公告)日：2021-01-21

    申请号：US16916228

    申请日：2020-06-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yukinori SHIMA ,  Masakatsu OHNO ,  Takumi SHIGENOBU

    IPC: H01L29/786 ,  H01L21/02 ,  H01L29/51

    Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The first insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The second insulating layer includes an oxide. The third insulating film includes a part in contact with the semiconductor layer. The first insulating film includes silicon and nitrogen. The second insulating film includes silicon, nitrogen, and oxygen. The third insulating film includes silicon and oxygen. The semiconductor layer includes indium and oxygen.

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