Method and apparatus for base station controller relocation in wireless communication system
    51.
    发明申请
    Method and apparatus for base station controller relocation in wireless communication system 审中-公开
    无线通信系统中基站控制器重定位的方法和装置

    公开(公告)号:US20060252421A1

    公开(公告)日:2006-11-09

    申请号:US11429220

    申请日:2006-05-08

    申请人: Sang Lee

    发明人: Sang Lee

    IPC分类号: H04Q7/20

    CPC分类号: H04W36/12

    摘要: A method and apparatus for base station controller relocation in a wireless communication system are disclosed. The apparatus for relocating a serving base station controller according to the present invention comprises a switching function part and a signaling function part. The signaling function part executes a change through a connection procedure in response to a base station controller relocation request from a source base station controller. The switching function part creates a termination 3 (T3) for the target base station controller and performs simplex switching to the terminations to connect the termination 3 (T3) to a termination 2(T2) initially maintaining connection with the source base station controller, thereby relocating the target base station controller as a serving base station controller.

    摘要翻译: 公开了一种用于无线通信系统中的基站控制器重定位的方法和装置。 根据本发明的用于重定位服务基站控制器的装置包括切换功能部分和信令功能部分。 响应于来自基站控制器的基站控制器重定位请求,信令功能部分通过连接过程执行改变。 交换功能部分为目标基站控制器创建终端3(T 3),并且执行到终端的单工切换以将终端3(T 3)连接到最初维护与源基站的连接的终端2(T 2) 从而将目标基站控制器重新定位为服务基站控制器。

    Internal power supply voltage generating circuit with reduced leakage current in standby mode
    53.
    发明申请
    Internal power supply voltage generating circuit with reduced leakage current in standby mode 有权
    内部电源电压发生电路在待机模式下具有降低的漏电流

    公开(公告)号:US20060250179A1

    公开(公告)日:2006-11-09

    申请号:US11304621

    申请日:2005-12-16

    申请人: Sang Lee

    发明人: Sang Lee

    IPC分类号: G05F1/10

    CPC分类号: G05F1/465 G11C11/417

    摘要: An internal power supply voltage generating circuit of semiconductor memory devices configured such that only a predetermined internal power driver is driven but the remaining internal power drivers are not driven, in a standby mode so that the leakage current in standby mode is reduced and the standby current is thus reduced. Furthermore, the leakage current of an internal power driver that does not operate in the standby mode is reduced using a high voltage as a back bias of the internal power driver.

    摘要翻译: 半导体存储器件的内部电源电压产生电路被配置成在待机模式下仅驱动预定的内部功率驱动器而不驱动剩余的内部电源驱动器,使得待机模式下的漏电流降低,并且待机电流 因此减少。 此外,使用高电压作为内部功率驱动器的反向偏压来减小不工作在待机模式的内部功率驱动器的漏电流。

    Apparatus for cooling computer parts and method of manufacturing the same
    54.
    发明申请
    Apparatus for cooling computer parts and method of manufacturing the same 审中-公开
    用于冷却计算机部件的装置及其制造方法

    公开(公告)号:US20060227506A1

    公开(公告)日:2006-10-12

    申请号:US11390293

    申请日:2006-03-27

    IPC分类号: H05K7/20

    摘要: Provided is an apparatus for cooling a computer part that generates heat installed in a computer. The apparatus includes a heat transferring block thermally coupled to the heat generating parts to receive the heat generated by the heat dissipating parts; at least one heat pipe including a heat transferring block coupling portion thermally coupled to the heat transferring block and a heat dissipating fin coupling portion bent into a curved shape; and a plurality of heat dissipating fins coupled to the heat dissipating fin coupling portion of the heat pipe and spaced apart from each other along to the heat dissipating fin coupling portion.

    摘要翻译: 提供一种用于冷却产生安装在计算机中的热量的计算机部件的装置。 该装置包括热耦合到发热部分以接收由散热部产生的热量的传热块; 至少一个热管,其包括热耦合到所述传热块的传热块联接部分和弯曲成弯曲形状的散热翅片联接部; 以及耦合到所述热管的所述散热翅片联接部分并且沿着所述散热翅片联接部分彼此间隔开的多个散热翅片。

    Information system for metabolic flux analysis using extensible markup language and operating method thereof
    55.
    发明申请
    Information system for metabolic flux analysis using extensible markup language and operating method thereof 失效
    使用可扩展标记语言进行代谢通量分析的信息系统及其操作方法

    公开(公告)号:US20060224371A1

    公开(公告)日:2006-10-05

    申请号:US11148907

    申请日:2005-06-09

    IPC分类号: G06G7/48 G06G7/58

    CPC分类号: G06F19/26 G06F19/12

    摘要: The present invention relates to an MFA (Metabolic Flux Analysis) information system using an XML (eXtensible Markup Language) and an operating method thereof. More specifically, the invention relates to an MFA information system and an operating method thereof, which generates, edits, stores and visualizes an MFA model feature and an MFA object using XML, and edits, stores and visualizes the result obtained by performing MFA based on the object. The present invention provides the MFA information system and method capable of generating, editing, storing and visualizing MFA model features and MFA objects using XML. Accordingly, MFA can be easily performed by utilizing advantages of XML, such as transplantation, reusability, deciphering, scalability, flexibility and effective data exchange, and thus the present invention can be applied to cell improvement using metabolic engineering.

    摘要翻译: 本发明涉及使用XML(可扩展标记语言)的MFA(代谢通量分析)信息系统及其操作方法。 更具体地,本发明涉及一种MFA信息系统及其操作方法,其使用XML生成,编辑,存储和可视化MFA模型特征和MFA对象,并且通过执行MFA获得的结果进行编辑,存储和可视化 物体。 本发明提供了能够使用XML来生成,编辑,存储和可视化MFA模型特征和MFA对象的MFA信息系统和方法。 因此,通过利用移植,可重用性,解密,可扩展性,灵活性和有效的数据交换等XML的优点,可以容易地实现MFA,因此本发明可以应用于使用代谢工程的细胞改良。

    Method for fabricating organic thin film transistor by application of electric field
    57.
    发明申请
    Method for fabricating organic thin film transistor by application of electric field 有权
    通过施加电场制造有机薄膜晶体管的方法

    公开(公告)号:US20060177961A1

    公开(公告)日:2006-08-10

    申请号:US11196382

    申请日:2005-08-04

    IPC分类号: H01L51/40

    摘要: A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.

    摘要翻译: 一种通过施加电场来制造有机薄膜晶体管的方法。 该方法包括以下步骤:制造包括栅电极,栅极绝缘层,有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管,以及在源极之间施加直流(DC)电压 和漏电极,并向栅电极施加交流(AC)电压。 通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。 因此,通过该方法制造的OTFT具有低阈值电压,低驱动电压,高电荷载流子迁移率和高I / O比较的高电荷载流子迁移率。

    Common use pedal device for automotive vehicles
    58.
    发明申请
    Common use pedal device for automotive vehicles 有权
    汽车用通用踏板装置

    公开(公告)号:US20060157028A1

    公开(公告)日:2006-07-20

    申请号:US11334872

    申请日:2005-12-23

    申请人: Sang Lee Kwang Choi

    发明人: Sang Lee Kwang Choi

    IPC分类号: F02D11/04 F02D11/10

    摘要: A common use pedal device for automotive vehicles comprises a base plate and a pedal pivotably attached to the base plate and having a push rod extending downwards from an underneath surface of the pedal. A rotating member is mounted to the base plate in such a manner that the rotating member can be depressed and rotated by the push rod of the pedal, the rotating member having a pulling arm adapted to pull a manual operating cable in response to rotation of the rotating member. A rotation detecting sensor is provided on one side of the base plate for detecting the degree of rotation of the rotating member and then notifying an electronic control unit of the degree of rotation thus detected. This pedal device can be employed in common in a manually controlled pedal type vehicle and an electronically controlled pedal type vehicle.

    摘要翻译: 用于机动车辆的常用踏板装置包括基座和可枢转地附接到基板的踏板,并且具有从踏板的下表面向下延伸的推杆。 旋转构件以这样的方式安装到基板上,使得旋转构件可以被踏板的推杆按压并旋转,旋转构件具有拉臂,该拉臂适于响应于旋转构件的旋转而拉动手动操作缆索 旋转构件。 旋转检测传感器设置在基板的一侧,用于检测旋转构件的旋转程度,然后通知电子控制单元检测到的旋转程度。 该踏板装置可以在手动控制的踏板式车辆和电子控制踏板式车辆中共同使用。

    Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same
    59.
    发明申请
    Organic thin film transistor including fluorine-based polymer thin film and method of fabricating the same 有权
    包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法

    公开(公告)号:US20060151781A1

    公开(公告)日:2006-07-13

    申请号:US11296704

    申请日:2005-12-08

    IPC分类号: H01L29/08

    摘要: An organic thin film transistor including a fluorine-based polymer thin film and method of fabricating the same. The organic thin film transistor may include a gate electrode, a gate insulating layer, an organic semiconductor layer, source electrode, and a drain electrode formed on a substrate wherein a fluorine-based polymer thin film may be formed (or deposited) at the interface between the gate insulating layer and the organic semiconductor layer. The organic thin film transistor may have higher charge carrier mobility and/or higher on/off current ratio (Ion/Ioff). In addition, a polymer organic semiconductor may be used to form the insulating layer and the organic semiconductor layer by wet processes, so the organic thin film transistor may be fabricated by simplified procedure(s) at reduced costs.

    摘要翻译: 包含氟基聚合物薄膜的有机薄膜晶体管及其制造方法。 有机薄膜晶体管可以包括形成在基板上的栅电极,栅极绝缘层,有机半导体层,源电极和漏电极,其中可以在界面处形成(或沉积)氟基聚合物薄膜 在栅绝缘层和有机半导体层之间。 有机薄膜晶体管可具有较高的电荷载流子迁移率和/或较高的导通/截止电流比(I />)。 此外,可以使用聚合物有机半导体通过湿法形成绝缘层和有机半导体层,因此有机薄膜晶体管可以通过简化的程序以降低的成本制造。

    Flash memory device and fabricating method thereof

    公开(公告)号:US20060145236A1

    公开(公告)日:2006-07-06

    申请号:US11320626

    申请日:2005-12-30

    申请人: Sang Lee

    发明人: Sang Lee

    IPC分类号: H01L29/76

    CPC分类号: H01L27/11521 H01L27/115

    摘要: A flash memory device includes a floating gate formed on a substrate, sidewall gates formed on sidewalls of the floating gate, an interlayer insulating layer formed the floating gate and the sidewall gates, and a control gate formed on the interlayer insulating layer. The fabricating method of a flash memory device includes forming a floating gate on a substrate, forming sidewall gates at sidewalls of the floating gate, forming an interlayer insulating layer on the floating gate and the sidewall gates, and forming a control gate on the interlayer insulating layer.