公开(公告)号：US07529050B2

公开(公告)日：2009-05-05

申请号：US11708941

申请日：2007-02-20

申请人： Yong Shen ,  Mike X. Wang ,  Jing Zhang

发明人： Yong Shen ,  Mike X. Wang ,  Jing Zhang

IPC分类号： G11B5/455 ,  G11B27/36

CPC分类号： G11B5/455 ,  G11B5/4555

摘要： One embodiment in accordance with the invention is a method for measuring a track width for a magnetic recording head comprising writing a first track and a second track on a disk at two different positions. Note that the first track is written at a frequency plus a frequency shift value while the second track is written at the frequency minus the frequency shift value.

摘要翻译： 根据本发明的一个实施例是一种用于测量磁记录头的轨道宽度的方法，包括在两个不同位置在盘上写入第一轨道和第二轨道。 注意，第一磁道以频率加上频移值写入，而第二磁道被写入频率减去频移值。

公开(公告)号：US20080019057A1

公开(公告)日：2008-01-24

申请号：US11821825

申请日：2007-06-26

申请人： Yong Shen ,  Kwok Leung ,  Hiroshi Kiyono ,  Tetsuo Miyazaki

发明人： Yong Shen ,  Kwok Leung ,  Hiroshi Kiyono ,  Tetsuo Miyazaki

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/0016 ,  G11B2005/3996

摘要： A magnetic reading head comprising: a bottom shield; a top shield; an AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic reading heads with GMR device free of electric-pop noise also are disclosed.

摘要翻译： 一种磁读头，包括：底屏蔽; 顶层盾牌 具有通过薄绝缘层分离的MR和SAL的AMR器件; 所述底屏蔽和所述AMR之间的第一绝缘间隙层; 所述AMR和所述顶部屏蔽之间的第二绝缘间隙层; 在所述MR和SAL的一个端部区域处的导电层接触。 此外，还公开了具有没有电流噪声的GMR装置的磁读头。

公开(公告)号：US07292401B2

公开(公告)日：2007-11-06

申请号：US11376660

申请日：2006-03-14

申请人： Yong Shen ,  Jing Zhang

发明人： Yong Shen ,  Jing Zhang

IPC分类号： G11B15/18

CPC分类号： G11B5/60 ,  G11B5/3948 ,  G11B5/6029

摘要： A system and method for determining head-disk contact (HDC) in a disk drive uses the signal from the magnetoresistive (MR) read head and does not require the presence of magnetic transitions on the disk. The method thus has application in head-disk testers or “spin stands” to facilitate the design and testing of slider-suspension assemblies and fly-height actuators, as well as in disk drives to take corrective action before HDC and/or to control fly-height actuators. The invention is also a magnetic recording disk drive that has a fly-height actuator and a low-pass filter and comparator circuit for the MR signal. When the output of the filter exceeds a threshold the comparator circuit output indicates the onset of HDC. The comparator circuit output is input to a digital processor or controller. When the controller determines the onset of HDC or that HDC has occurred, it generates a control signal that can be used to cause the disk drive to take corrective action.

公开(公告)号：US07158356B2

公开(公告)日：2007-01-02

申请号：US10792078

申请日：2004-03-03

申请人： Yong Shen ,  Kwok Kam Leung ,  Hiroshi Kiyono ,  Tetsuo Miyazaki

发明人： Yong Shen ,  Kwok Kam Leung ,  Hiroshi Kiyono ,  Tetsuo Miyazaki

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/0016 ,  G11B2005/3996

摘要： The invention relates to a magnetic recording head comprising: a bottom shield; a top shield; and AMR device with MR and SAL separated by a thin insulating layer; a first insulting gap layer between said bottom shield and said AMR; a second insulating gap layer between said AMR and said top shield; a conductive layer contact at one end region of said MR and SAL. Furthermore, magnetic recording heads with GMR device free of electric-pop noise also are disclosed.

摘要翻译： 磁记录头技术领域本发明涉及一种磁记录头，包括：底屏蔽; 顶层盾牌 和具有由绝缘层薄的MR和SAL分隔的AMR器件; 所述底屏蔽和所述AMR之间的第一绝缘间隙层; 所述AMR和所述顶部屏蔽之间的第二绝缘间隙层; 在所述MR和SAL的一个端部区域处的导电层接触。 此外，还公开了具有没有电流噪声的GMR装置的磁记录头。

公开(公告)号：US07130153B2

公开(公告)日：2006-10-31

申请号：US10675736

申请日：2003-09-29

申请人： Yong Shen ,  Sue S. Zhang

发明人： Yong Shen ,  Sue S. Zhang

IPC分类号： G11B5/147

CPC分类号： G11B5/3116 ,  Y10T29/49032

摘要： A magnetic write head assembly has a head surface and a track width at the head surface wherein the head surface forms a first vertical plane and wherein the head assembly includes first and second pole pieces, a write gap located between the first and second pole pieces, the second pole piece having first and second components wherein the first component is located between the write gap and the second component and each of the first and second components has a height into the head which extends from and which is oriented perpendicular to said head surface, the first component having a uniform thickness throughout its height into the head with the height into the head forming a zero throat (ZTH) which lies in a second vertical plane that is parallel to said first vertical plane, the height into the head of the second component being greater than the height into the head of the first component, and each of the first and second components having said track width at the head surface.

摘要翻译： 磁头组件具有头表面和头表面处的轨道宽度，其中头表面形成第一垂直平面，并且其中头组件包括第一和第二极片，位于第一和第二极片之间的写入间隙， 所述第二极靴具有第一和第二部件，其中所述第一部件位于所述写入间隙和所述第二部件之间，并且所述第一和第二部件中的每一个具有从所述头部延伸并垂直于所述头部表面定向的头部的高度， 所述第一部件在其整个高度上具有均匀的厚度到头部中，其中头部的高度形成零喉部（ZTH），所述零喉部位于平行于所述第一垂直平面的第二垂直平面中， 分量大于进入第一部件的头部的高度，并且第一和第二部件中的每一个在头部表面具有所述轨道宽度。

公开(公告)号：US06445536B1

公开(公告)日：2002-09-03

申请号：US09140903

申请日：1998-08-27

申请人： Steven C. Rudy ,  Hugh C. Hiner ,  Lien-Chang Wang ,  Yong Shen ,  Ut Tran ,  Yunju Ra ,  Durga Ravipati

发明人： Steven C. Rudy ,  Hugh C. Hiner ,  Lien-Chang Wang ,  Yong Shen ,  Ut Tran ,  Yunju Ra ,  Durga Ravipati

IPC分类号： G11B533

CPC分类号： G11B5/3163 ,  G11B5/3109 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3967

摘要： A thin film head apparatus and method for forming such a thin film head. In one approach, the present invention recites forming a cavity in a dielectric layer. Next, a layer of high magnetic field saturation (HBsat) material is sputter-deposited over the dielectric layer such that the HBsat material is deposited into the cavity formed in the dielectric layer. The cavity in the dielectric layer functions as a mold or “stencil” for the HBsat material. The HBsat material deposited into the cavity is used to form the first core of a thin film head. After the formation of the first core of the thin film head, a gap layer of material is deposited above the dielectric layer and above the first core. Next, a layer of HBsat material is sputter-deposited above the gap layer of material and above the first core of the thin film head. The layer of HBsat material disposed above the gap layer of material and above the first core is used to form the second core of the thin film head. Hence, this invention forms first and second cores of a thin film head using sputter deposition processes. As a result, selected HBsat materials which were not well suited to conventional thin film head formation methods can now be used to form the cores of thin film head structures.

摘要翻译： 一种用于形成这种薄膜头的薄膜头装置和方法。 在一种方法中，本发明阐述了在电介质层中形成空腔。 接下来，将一层高磁场饱和（HBsat）材料溅射沉积在电介质层上，使得HBsat材料沉积到形成在电介质层中的空腔中。 电介质层中的空腔用作HBsat材料的模具或“模板”。 沉积到腔中的HBsat材料用于形成薄膜头的第一芯。 在形成薄膜头的第一芯之后，材料的间隙层沉积在介电层上方并在第一芯上方。 接下来，将一层HBsat材料溅射沉积在材料的间隙层的上方并位于薄膜头的第一芯上方。 设置在材料的间隙层之上和第一芯之上的HBsat材料层用于形成薄膜头的第二芯。 因此，本发明使用溅射沉积工艺形成薄膜头的第一和第二芯。 结果，现在可以使用非常适合于常规薄膜头形成方法的所选HBsat材料来形成薄膜头结构的芯。

公开(公告)号：US5646805A

公开(公告)日：1997-07-08

申请号：US711301

申请日：1996-09-03

申请人： Yong Shen ,  Steven Clark Rudy

发明人： Yong Shen ,  Steven Clark Rudy

IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33

CPC分类号： G11B5/399 ,  G11B5/3903

摘要： A magnetoresistive transducer is formed with a trilayer structure including a soft adjacent magnetic layer (SAL), a spacer layer and a magnetoresistive (MR) sensor element. The SAL and part of the spacer layer extend continuously across the transducer structure. The MR sensor element has end portions that partially abut hard permanent magnetic (PM) films and partially abut conductive leads formed over the PM films. The transducer structure minimizes the problem of electrical shorting and achieves significant improvements in magnetic performance of the active MR region and signal readout.

摘要翻译： 形成具有包括软相邻磁性层（SAL），间隔层和磁阻（MR）传感器元件的三层结构的磁阻换能器。 间隔层的SAL和一部分连续延伸穿过换能器结构。 MR传感器元件具有部分地邻接硬永磁（PM）膜并且部分地邻接形成在PM膜上的导电引线的端部。 换能器结构最小化电短路的问题，并且实现有源MR区域和信号读出的磁性能的显着改进。