公开(公告)号：US06744608B1

公开(公告)日：2004-06-01

申请号：US10146517

申请日：2002-05-14

Applicant: Kyusik Sin ,  Kristian M. Bjelland ,  Benjamin Chen ,  Hugh C. Hiner ,  Xizeng Shi

Inventor： Kyusik Sin ,  Kristian M. Bjelland ,  Benjamin Chen ,  Hugh C. Hiner ,  Xizeng Shi

IPC: G11B5127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996

Abstract: A method and system for providing a tunneling magnetoresistive sensor is disclosed. The method and system include providing a pinned layer, a free layer and an insulating layer between the pinned and free layers. The pinned and free layers are ferromagnetic. The method and system also include providing a hard mask layer to be used in defining the sensor at the top of the tunneling magnetoresistive sensor. The method and system also include using the hard mask layer to define the tunneling magnetoresistive sensor. Thus, the pinned layer, the free layer and the insulating layer are capable of having a minimum dimension of less than 0.2 &mgr;m.

Abstract translation: 公开了一种用于提供隧道磁阻传感器的方法和系统。 该方法和系统包括在钉扎层和自由层之间提供钉扎层，自由层和绝缘层。 固定和自由层是铁磁性的。 该方法和系统还包括提供用于在隧道磁阻传感器的顶部限定传感器的硬掩模层。 该方法和系统还包括使用硬掩模层来定义隧道磁阻传感器。 因此，被钉扎层，自由层和绝缘层能够具有小于0.2μm的最小尺寸。

公开(公告)号：US08081403B1

公开(公告)日：2011-12-20

申请号：US12170619

申请日：2008-07-10

Applicant: Benjamin Chen ,  Hongping Yuan ,  Danning Yang ,  Wei Zhang ,  Hugh C. Hiner ,  Lei Wang ,  Yingjian Chen ,  Brant Nease

Inventor： Benjamin Chen ,  Hongping Yuan ,  Danning Yang ,  Wei Zhang ,  Hugh C. Hiner ,  Lei Wang ,  Yingjian Chen ,  Brant Nease

IPC: G11B5/39

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909

Abstract: A magnetic element includes a pinned layer, a nonferromagnetic spacer layer, and a free layer. The nonferromagnetic spacer layer resides between the pinned layer and the free layer. The free layer has a track width of not more than 0.08 micron.

Abstract translation: 磁性元件包括钉扎层，非铁磁隔离层和自由层。 非铁磁间隔层位于被钉扎层和自由层之间。 自由层的轨道宽度不大于0.08微米。

公开(公告)号：US07819979B1

公开(公告)日：2010-10-26

申请号：US11046972

申请日：2005-01-31

Applicant: Benjamin Chen ,  Yun-Fei Li ,  Hugh C. Hiner ,  Wei Zhang ,  Yingjian Chen

Inventor： Benjamin Chen ,  Yun-Fei Li ,  Hugh C. Hiner ,  Wei Zhang ,  Yingjian Chen

IPC: B08B7/00 ,  B08B7/04

CPC classification number: G01R33/098 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/84 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3268 ,  H01F41/308 ,  H01F41/32

Abstract: A method and system for providing a magnetic structure that includes at least one magnetic material is disclosed. The method and system include defining the magnetic structure. The magnetic structure also includes a top layer that is insensitive to an istroropic carbonyl reactive ion etch. The defining of the magnetic structure results in at least one artifact. The method and system further includes cleaning the at least one artifact using at least one isotropic carbonyl reactive ion etch.

Abstract translation: 公开了一种用于提供包括至少一种磁性材料的磁性结构的方法和系统。 该方法和系统包括限定磁结构。 磁性结构还包括对异构羰基反应离子蚀刻不敏感的顶层。 磁结构的定义导致至少一个假象。 所述方法和系统还包括使用至少一种各向同性的羰基反应离子蚀刻来清洁所述至少一个假象。

公开(公告)号：US06707083B1

公开(公告)日：2004-03-16

申请号：US10192458

申请日：2002-07-09

Applicant: Hugh C. Hiner ,  Kyusik Sin ,  Matthew Gibbons ,  Xizeng Shi

Inventor： Hugh C. Hiner ,  Kyusik Sin ,  Matthew Gibbons ,  Xizeng Shi

IPC: H01L31119

CPC classification number: G11C11/16 ,  H01L27/222

Abstract: A method and system for providing a magnetic tunneling junction is disclosed. The method and system includes providing a free layer, a pinned layer, and a barrier between the free layer and the pinned layer. The free layer and the pinned layer are ferromagnetic. The barrier layer is an insulator. The magnetic tunneling junction is coupled to a bit line. The bit line includes a ferromagnetic liner and a nonmagnetic core. The nonmagnetic core includes a top, a bottom and sides. The ferromagnetic liner includes at least one tab and is adjacent to the sides and a portion of the bottom of the nonmagnetic core. The at least one tab is adjacent to the portion of the bottom of the nonmagnetic core.

Abstract translation: 公开了一种用于提供磁隧道结的方法和系统。 该方法和系统包括在自由层和被钉扎层之间提供自由层，钉扎层和阻挡层。 自由层和钉扎层是铁磁性的。 阻挡层是绝缘体。 磁隧道结耦合到位线。 位线包括铁磁衬垫和非磁性芯。 非磁性芯包括顶部，底部和侧面。 铁磁衬垫包括至少一个突片，并且与非磁性芯的侧面和底部的一部分相邻。 至少一个突片邻近非磁性芯的底部的部分。

公开(公告)号：US06683763B1

公开(公告)日：2004-01-27

申请号：US09990738

申请日：2001-11-21

Applicant: Hugh C. Hiner ,  Kyusik Sin ,  William Jensen ,  Xizeng Shi

Inventor： Hugh C. Hiner ,  Kyusik Sin ,  William Jensen ,  Xizeng Shi

IPC: G11B5127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/06 ,  G11B5/3909 ,  H01F10/3254 ,  H01F41/308 ,  H01L43/12

Abstract: A method and structure for providing a tunneling magnetoresistive (TMR) element is disclosed. The method and structure include providing a TMR layer that includes a first magnetic layer, a second magnetic layer and a first insulating layer disposed between the first magnetic layer and the second magnetic layer. The method and structure also include providing a first material and a protective layer. The first material allows electrical contact to be made to the tunneling magnetoresistive layer and is disposed above the tunneling magnetoresistive layer. The first material is capable of being undercut by an plasma etch without exposing a portion of the tunneling magnetoresistive layer under a remaining portion of the first material. The second protective layer covers a portion of the tunneling magnetoresistive sensor and a portion of the first material. In one aspect, the method and structure also include providing a second material disposed between the tunneling magnetoresistive layer and the first material. The second material allows electrical contact to be made to the tunneling magnetoresistive layer and is resistant to removal by the plasma etch.

Abstract translation: 公开了一种用于提供隧道磁阻（TMR）元件的方法和结构。 该方法和结构包括提供包括第一磁性层，第二磁性层和设置在第一磁性层和第二磁性层之间的第一绝缘层的TMR层。 该方法和结构还包括提供第一材料和保护层。 第一材料允许对隧道磁阻层进行电接触并且设置在隧道磁阻层之上。 第一种材料能够通过等离子体蚀刻而被切割，而不会在隧道磁阻层的一部分暴露在第一材料的剩余部分之下。 第二保护层覆盖隧道磁阻传感器的一部分和第一材料的一部分。 一方面，该方法和结构还包括提供设置在隧道磁阻层和第一材料之间的第二材料。 第二种材料允许对隧道磁阻层进行电接触，并且耐受等离子体蚀刻的去除。

公开(公告)号：US6032353A

公开(公告)日：2000-03-07

申请号：US857138

申请日：1997-05-15

Applicant: Hugh C. Hiner ,  Billy Wayne Crue ,  William D. Jensen ,  Lein-Chang Wang ,  Durga P. Ravipati

Inventor： Hugh C. Hiner ,  Billy Wayne Crue ,  William D. Jensen ,  Lein-Chang Wang ,  Durga P. Ravipati

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/127

CPC classification number: G11B5/3967 ,  G11B5/31 ,  G11B5/3106 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T29/49044

Abstract: A magnetic head includes pole tips with aligned sidewalls and a low head profile. The aligned sidewalls are formed by depositing a stack of pole tip layers on a substrate. The stack of layers are etched through a common overlying mask. The stack of layers is covered over and around with a protective layer which is then planarized such that the stack of layers is exposed. The protective layer is etched to a predetermined thickness above the substrate, which is thinner than the thickness of the stack of layers. An inductive coil layer is deposited on the etched protective layer and covered with an overlying magnetic yoke layer which is dielectrically separated from the coil layer. The yoke layer thus formed assumes a low profile curvature due to the thin structure of the protective layer on the substrate. As a consequence, the overall stack height of the magnetic head is reduced, thereby reducing the inductance of the overlying yoke layer and further alleviating the step coverage problem of the magnetic head during fabrication.

公开(公告)号：US06418048B1

公开(公告)日：2002-07-09

申请号：US09969315

申请日：2001-10-02

Applicant: Kyusik Sin ,  Shin Funada ,  Hugh C. Hiner ,  Xizeng Shi

Inventor： Kyusik Sin ,  Shin Funada ,  Hugh C. Hiner ,  Xizeng Shi

IPC: G11C1115

CPC classification number: G11C11/15

Abstract: A method and system for providing a top pinned spin-dependent tunneling sensor is disclosed. The method and system include providing a free layer, a tunneling barrier, a synthetic pinned layer and an antiferromagnetic layer. The free layer is ferromagnetic. The tunneling barrier is an insulator. The tunneling barrier is disposed between the free layer and the synthetic pinned layer. The synthetic pinned layer is ferromagnetic and includes a ferromagnetic top layer. The synthetic pinned layer is between the tunneling barrier and the antiferromagnetic layer. The ferromagnetic top layer acts as a seed layer for the antiferromagnetic layer.

Abstract translation: 公开了一种用于提供顶部钉扎自旋相关隧道传感器的方法和系统。 该方法和系统包括提供自由层，隧道势垒，合成钉扎层和反铁磁层。 自由层是铁磁性的。 隧道屏障是绝缘体。 隧道势垒设置在自由层和合成钉扎层之间。 合成钉扎层是铁磁性的并且包括铁磁顶层。 合成钉扎层位于隧道势垒和反铁磁层之间。 铁磁顶层用作反铁磁层的种子层。

公开(公告)号：US06504676B1

公开(公告)日：2003-01-07

申请号：US09458975

申请日：1999-12-10

Applicant: Hugh C. Hiner ,  Billy Wayne Crue ,  William D. Jensen ,  Lien-Chang Wang ,  Durga P. Ravipati

Inventor： Hugh C. Hiner ,  Billy Wayne Crue ,  William D. Jensen ,  Lien-Chang Wang ,  Durga P. Ravipati

IPC: G11B5187

CPC classification number: G11B5/3967 ,  G11B5/31 ,  G11B5/3106 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T29/49044

Abstract: A magnetic head includes pole tips with aligned sidewalls and a low head profile. The aligned sidewalls are formed by depositing a stack of pole tip layers on a substrate. The stack of layers are etched through a common overlying mask. The stack of layers is covered over and around with a protective layer which is then planarized such that the stack of layers is exposed. The protective layer is etched to a predetermined thickness above the substrate, which is thinner than the thickness of the stack of layers. An inductive coil layer is deposited on the etched protective layer and covered with an overlying magnetic yoke layer which is dielectrically separated from the coil layer. The yoke layer thus formed assumes a low profile curvature due to the thin structure of the protective layer on the substrate. As a consequence, the overall stack height of the magnetic head is reduced, thereby reducing the inductance of the overlying yoke layer and further alleviating the step coverage problem of the magnetic head during fabrication.

Abstract translation: 磁头包括具有对准侧壁和低头部轮廓的极尖。 排列的侧壁通过在基板上沉积极尖端层叠而形成。 通过共同的覆盖掩模蚀刻层叠层。 层叠层被保护层覆盖并围绕，然后将其平坦化，使得层的一层被暴露。 将保护层蚀刻到衬底上方的预定厚度，其比层叠层的厚度薄。 感应线圈层沉积在蚀刻的保护层上并用覆盖的磁轭层覆盖，该磁轭层与线圈层介电地分离。 由此形成的轭层由于衬底上的保护层的薄结构而呈现低曲率的曲率。 结果，磁头的整体堆叠高度减小，从而降低了上覆磁轭层的电感，并进一步减轻了制造过程中磁头的台阶覆盖问题。

公开(公告)号：US06445536B1

公开(公告)日：2002-09-03

申请号：US09140903

申请日：1998-08-27

Applicant: Steven C. Rudy ,  Hugh C. Hiner ,  Lien-Chang Wang ,  Yong Shen ,  Ut Tran ,  Yunju Ra ,  Durga Ravipati

Inventor： Steven C. Rudy ,  Hugh C. Hiner ,  Lien-Chang Wang ,  Yong Shen ,  Ut Tran ,  Yunju Ra ,  Durga Ravipati

IPC: G11B533

CPC classification number: G11B5/3163 ,  G11B5/3109 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3967

Abstract: A thin film head apparatus and method for forming such a thin film head. In one approach, the present invention recites forming a cavity in a dielectric layer. Next, a layer of high magnetic field saturation (HBsat) material is sputter-deposited over the dielectric layer such that the HBsat material is deposited into the cavity formed in the dielectric layer. The cavity in the dielectric layer functions as a mold or “stencil” for the HBsat material. The HBsat material deposited into the cavity is used to form the first core of a thin film head. After the formation of the first core of the thin film head, a gap layer of material is deposited above the dielectric layer and above the first core. Next, a layer of HBsat material is sputter-deposited above the gap layer of material and above the first core of the thin film head. The layer of HBsat material disposed above the gap layer of material and above the first core is used to form the second core of the thin film head. Hence, this invention forms first and second cores of a thin film head using sputter deposition processes. As a result, selected HBsat materials which were not well suited to conventional thin film head formation methods can now be used to form the cores of thin film head structures.

Abstract translation: 一种用于形成这种薄膜头的薄膜头装置和方法。 在一种方法中，本发明阐述了在电介质层中形成空腔。 接下来，将一层高磁场饱和（HBsat）材料溅射沉积在电介质层上，使得HBsat材料沉积到形成在电介质层中的空腔中。 电介质层中的空腔用作HBsat材料的模具或“模板”。 沉积到腔中的HBsat材料用于形成薄膜头的第一芯。 在形成薄膜头的第一芯之后，材料的间隙层沉积在介电层上方并在第一芯上方。 接下来，将一层HBsat材料溅射沉积在材料的间隙层的上方并位于薄膜头的第一芯上方。 设置在材料的间隙层之上和第一芯之上的HBsat材料层用于形成薄膜头的第二芯。 因此，本发明使用溅射沉积工艺形成薄膜头的第一和第二芯。 结果，现在可以使用非常适合于常规薄膜头形成方法的所选HBsat材料来形成薄膜头结构的芯。

公开(公告)号：US06173486B1

公开(公告)日：2001-01-16

申请号：US08810862

申请日：1997-03-04

Applicant: Yun-Lin Hsiao ,  Lien-Chang Wang ,  Durga I. Ravipati ,  Hugh C. Hiner ,  William D. Jensen

Inventor： Yun-Lin Hsiao ,  Lien-Chang Wang ,  Durga I. Ravipati ,  Hugh C. Hiner ,  William D. Jensen

IPC: G11B5127

CPC classification number: G11B5/3116 ,  G11B5/3106 ,  G11B5/3163 ,  Y10T29/49044

Abstract: A magnetic head includes first and second pole tips separated by a nonmagnetic gap layer. The right side walls of the first and second pole tips are vertically aligned. Similarly, the left side walls of the first and second pole tips are vertically aligned. The side fringing flux is substantially reduced resulting in a magnetic head capable of writing data tracks with well defined boundaries. The fabrication of the magnetic head begins with forming a stack of layers on a substrate. The stack of layers includes a nonmagnetic layer sandwiched between the first pole tip layer and a sacrificial layer which is preferably made of a metal. A protective layer, such as alumina, is then deposited over and around the stack of layers. After planarization and ion milling, the sacrificial layer is exposed. The sacrificial layer is then etched away leaving a volume of space in the protective layer and above the gap layer. An inductive coil with associated dielectric layers are then deposited above the first pole layer. The second pole layer is thereafter deposited over the inductive coil and into the volume of space resulting in the first and second pole tips having vertically aligned side walls.

Abstract translation: 磁头包括由非磁性间隙层分开的第一和第二极尖。 第一和第二极尖的右侧壁垂直对准。 类似地，第一和第二极尖的左侧壁垂直对齐。 侧面通量大大减小，导致能够以良好界定的边界写入数据轨迹的磁头。 磁头的制造开始于在衬底上形成一叠层。 层叠层包括夹在第一极尖端层和优选由金属制成的牺牲层之间的非磁性层。 然后将保护层（例如氧化铝）沉积在层叠层上和周围。 在平坦化和离子研磨之后，牺牲层被暴露。 然后蚀刻牺牲层，留下保护层中的空间的体积并且在间隙层上方。 然后在第一极层上方沉积具有相关电介质层的感应线圈。 然后，第二极层沉积在感应线圈上并进入空间体积，从而产生第一和第二极尖具有垂直排列的侧壁。