公开(公告)号：US20060231527A1

公开(公告)日：2006-10-19

申请号：US11452987

申请日：2006-06-15

申请人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

发明人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

IPC分类号： B44C1/22 ,  C03C25/68

CPC分类号： H01L27/1266 ,  H01L21/02672 ,  H01L21/2007 ,  H01L21/2022 ,  H01L21/76251 ,  H01L27/124 ,  H01L29/41733 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01021 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.

摘要翻译： 提供了一种以高产率分离层压体而不损坏层压体的方法。 此外，提供了总体薄的制造轻量，柔性半导体器件的方法。 半导体器件的制造方法包括：在第一基板上层叠金属层，氧化物层，不含氢元素的层和层叠体的第一工序; 在透明基板上形成光催化层的第二步骤; 以及第三步骤，通过在第一和第二步骤之后使用第一粘合剂材料将光催化层附着到层压体的表面，将金属层与氧化物层分离，并且从透明基板的侧面照射光，使得 分离光催化层和第一粘合剂材料之间的界面以除去第一粘合剂材料。

公开(公告)号：US07084045B2

公开(公告)日：2006-08-01

申请号：US11007308

申请日：2004-12-09

申请人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

发明人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L27/1266 ,  H01L21/02672 ,  H01L21/2007 ,  H01L21/2022 ,  H01L21/76251 ,  H01L27/124 ,  H01L29/41733 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01021 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.

公开(公告)号：US20050214688A1

公开(公告)日：2005-09-29

申请号：US11087829

申请日：2005-03-24

申请人： Yoshiaki Yamamoto ,  Hiroko Yamamoto ,  Yukie Suzuki

发明人： Yoshiaki Yamamoto ,  Hiroko Yamamoto ,  Yukie Suzuki

IPC分类号： G03F1/14 ,  G03F7/20 ,  G03F9/00 ,  H01L21/336 ,  H01L21/768 ,  H01L21/77

CPC分类号： H01L29/66765 ,  G03F7/00 ,  G03F7/2041 ,  H01L21/76823 ,  H01L21/76825 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1292 ,  H01L29/66757

摘要： An object of the invention is to provide a method for manufacturing a semiconductor device having a semiconductor element with a minute structure, which can reduce a cost and improve throughput due to a small number of steps and reduction in a material. One feature of the invention is to form a first film pattern over a substrate, form a second film pattern which is curved on the surface of the first film pattern or the substrate, and form a film pattern by irradiating the first film pattern with light with the second film pattern therebetween and modifying part of the second film pattern.

摘要翻译： 本发明的目的是提供一种具有微结构的半导体元件的半导体器件的制造方法，由于少量的步骤和材料的减少，能够降低成本并提高生产率。 本发明的一个特征是在衬底上形成第一膜图案，形成在第一膜图案或衬底的表面上弯曲的第二膜图案，并通过用第一膜图案照射第一膜图案形成膜图案， 其间的第二胶片图案和修改第二胶片图案的部分。

公开(公告)号：US08148259B2

公开(公告)日：2012-04-03

申请号：US11843745

申请日：2007-08-23

申请人： Yasuyuki Arai ,  Koichiro Tanaka ,  Yukie Suzuki

发明人： Yasuyuki Arai ,  Koichiro Tanaka ,  Yukie Suzuki

IPC分类号： H01L21/4763

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： The present invention offers a method for forming an opening portion by a simple process without using a photomask or a resist. Further, the present invention proposes a method for manufacturing a semiconductor device at low cost. A plurality of light absorbing layers is formed over a substrate, an interlayer insulating layer is formed over the plurality of light absorbing layers, the plurality of light absorbing layers is irradiated with a linear or rectangular laser beam from the interlayer insulating layer side, and at least the interlayer insulating layer which is over the plurality of light absorbing layers is removed and an opening portion is formed; and accordingly, a plurality of opening portions can be formed by removing the plurality of light absorbing layers and an insulating film formed over the plurality of light absorbing layers.

摘要翻译： 本发明提供一种通过简单的工艺形成开口部分的方法，而不使用光掩模或抗蚀剂。 此外，本发明提供一种以低成本制造半导体器件的方法。 在衬底上形成多个光吸收层，在多个光吸收层上形成层间绝缘层，多层光吸收层用来自层间绝缘层侧的直线或矩形激光束照射，并且在 除去多个光吸收层之上的层间绝缘层的最小值，形成开口部; 因此，可以通过去除多个光吸收层和形成在多个光吸收层上的绝缘膜来形成多个开口部。

公开(公告)号：US07341924B2

公开(公告)日：2008-03-11

申请号：US11452987

申请日：2006-06-15

申请人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

发明人： Toru Takayama ,  Yasuyuki Arai ,  Yukie Suzuki

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L27/1266 ,  H01L21/02672 ,  H01L21/2007 ,  H01L21/2022 ,  H01L21/76251 ,  H01L27/124 ,  H01L29/41733 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05572 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01021 ,  H01L2924/01055 ,  H01L2924/01068 ,  H01L2924/07811 ,  H01L2924/12044 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method of separating a lamination body with high yield without damaging the lamination body is provided. Further, a method of manufacturing a lightweight, flexible semiconductor device, which is thin in total is provided. The method of manufacturing the semiconductor device includes: a first step of laminating a metal layer, an oxide layer, a layer containing no hydrogen element, and a lamination body on a first substrate; a second step of forming a photocatalytic layer on a transparent substrate; and a third step of attaching the photocatalytic layer to the surface of the lamination body by using a first adhesive material after the first and second steps, separating the metal layer from the oxide layer, and irradiating light from a side of the transparent substrate so that an interface between the photocatalytic layer and the first adhesive material is separated to remove the first adhesive material.

摘要翻译： 提供了一种以高产率分离层压体而不损坏层压体的方法。 此外，提供了总体薄的制造轻量，柔性半导体器件的方法。 半导体器件的制造方法包括：在第一基板上层叠金属层，氧化物层，不含氢元素的层和层叠体的第一工序; 在透明基板上形成光催化层的第二步骤; 以及第三步骤，通过在第一和第二步骤之后使用第一粘合剂材料将光催化层附着到层压体的表面，将金属层与氧化物层分离，并且从透明基板的侧面照射光，使得 分离光催化层和第一粘合剂材料之间的界面以除去第一粘合剂材料。