Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
    51.
    发明授权
    Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material 有权
    制造具有改善基板材料用途的含镓和氮的轴承激光器件的方法

    公开(公告)号:US09362715B2

    公开(公告)日:2016-06-07

    申请号:US14176403

    申请日:2014-02-10

    Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.

    Abstract translation: 在一个实例中,本发明提供一种制造含镓和氮的激光二极管器件的方法。 该方法包括提供具有表面区域并形成覆盖在表面区域上的外延材料的含镓和氮的衬底,所述外延材料包括n型包层区域,有源区域包括覆盖在n型包层上的至少一个有源层 区域和覆盖有源层区域的p型覆层区域。 该方法包括图案化外延材料以形成多个骰子,每个骰子对应于至少一个激光装置,其特征在于一对骰子之间的第一间距,第一间距小于设计宽度。 该方法包括将多个骰子中的每一个转移到载体晶片,使得每对骰子在每对骰子之间配置有第二间距,第二间距大于对应于设计宽度的第一间距。

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