摘要:
The present invention is directed to an organic optoelectronic device, such as an OLED device, provided with a vacuum deposited conformal composite coating for protecting the device from environmental elements such as moisture and oxygen. The present invention is also directed to a method for vacuum depositing a conformal composite coating directly onto an organic optoelectronic device, such as an OLED device, on a substrate. According to one embodiment, the invention provides a protected OLED device comprising a substrate; an active region positioned on said substrate; a first protective layer disposed over the active region; and a second protective layer disposed over the first protective layer, wherein said second protective layer comprises multiple sub-layers that further comprise an alternating series of two or more first polymeric sub-layers and two or more first high density sub-layers.
摘要:
The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters for the efficient utilization of all of the electrically generated excitons.
摘要:
A method for forming an electronic device such as a passive color OLED display. Bottom electrodes are patterned onto a substrate in rows. Raised posts formed by photoresist are patterned into columns oriented orthogonally to the bottom row electrodes. One or more organic layers, such as R, G, B organic emissive layers are patterned over the raised posts and bottom electrodes using organic vapor jet printing (OVJP). An upper electrode layer is applied over the entire device and forms electrically isolated columnar electrodes due to discontinuities in the upper electrode layer created by the raised columnar posts. This permits patterning of the upper electrodes over the organic layers without using photolithography. A device formed by this method is also described.
摘要:
The present invention relates to OLEDs utilizing direct injection to the triplet state. The present invention also relates to OLEDs utilizing resonant injection and/or stepped energy levels.
摘要:
Certain iridium compounds which may comprise an iridium(III)-ligand complex having the general formula: (ĈN)2—Ir—(N̂N). (ĈN) and (N̂N) may each represent a ligand coordinated to an iridium atom. The iridium compounds may have a primary phosphorescent photoluminescence peak wavelength in the near-infrared (IR) range. Also, organic devices that use certain iridium compounds. The organic device may comprise an organic layer and the organic layer may comprise any of the iridium compounds disclosed herein. Also, organic devices that use certain metalloporphyrin compounds. The metalloporphyrin compounds may comprise a core porphyrin structure with four pyrrole rings. The metalloporphyrin compounds may have a primary phosphorescent photoluminescence peak wavelength in the near-IR range.
摘要:
Certain iridium compounds which may comprise an iridium(III)-ligand complex having the general formula: (C^N)2—Ir—(N^N). (C^N) and (N^N) may each represent a ligand coordinated to an iridium atom. The iridium compounds may have a primary phosphorescent photoluminescence peak wavelength in the near-infrared (IR) range. Also, organic devices that use certain iridium compounds. The organic device may comprise an organic layer and the organic layer may comprise any of the iridium compounds disclosed herein. Also, organic devices that use certain metalloporphyrin compounds. The metalloporphyrin compounds may comprise a core porphyrin structure with four pyrrole rings. The metalloporphyrin compounds may have a primary phosphorescent photoluminescence peak wavelength in the near-IR range.
摘要:
Methods and systems for organic vapor jet deposition are provided, where an exhaust is disposed between adjacent nozzles. The exhaust may reduce pressure buildup in the nozzles and between the nozzles and the substrate, leading to improved deposition profiles, resolution, and improved nozzle-to-nozzle uniformity. The exhaust may be in fluid communication with an ambient vacuum, or may be directly connected to a vacuum source.
摘要:
A method which lower the series resistance of photosensitive devices includes providing a transparent film of a first electrically conductive material arranged on a transparent substrate; depositing and patterning a mask over the first electrically conductive material, such that openings in the mask have sloping sides which narrow approaching the substrate; depositing a second electrically conductive material directly onto the first electrically conductive material exposed in the openings of the mask, at least partially filling the openings; stripping the mask, leaving behind reentrant structures of the second electrically conductive material which were formed by the deposits in the openings of the mask; after stripping the mask, depositing a first organic material onto the first electrically conductive material in between the reentrant structures; and directionally depositing a third electrically conductive material over the first organic material deposited in between the reentrant structures, edges of the reentrant structures aligning deposition so that the third electrically conductive material does not directly contact the first electrically conductive material, and does not directly contact the second electrically conductive material.
摘要:
A polarization insensitive semiconductor optical amplifier (SOA) is provided. The SOA includes an active waveguide, a passive waveguide, and a taper coupler for coupling optical energy from the passive waveguide into the active waveguide, wherein the taper coupler has width W varying relative to position along a main axis z of propagation of the SOA in proportion to the minimum value of 1/CTE 01(z) 1/CTM 01(z), where CTE 01(z) represents the coefficient of energy coupling between a fundamental mode and a first order mode for the transverse electric polarization as a function of the position z, and CTM 01(z) represents the coefficient of energy coupling between a fundamental mode and a first order mode for the transverse magnetic polarization as a function of the position z.
摘要翻译:提供了偏振不敏感半导体光放大器(SOA)。 SOA包括有源波导,无源波导和锥形耦合器,用于将来自无源波导的光能耦合到有源波导中,其中锥形耦合器具有相对于沿着SOA的传播主轴线z的位置而变化的宽度W (z)1 / C TM 01(z)的最小值的比例,其中C TE 01(z) )表示作为位置z的函数的横向电极化的基模和一阶模式之间的能量耦合系数,并且C 1(z)表示 作为位置z的函数的横向磁极化的基本模式和一阶模式。
摘要:
A device is provided having a first electrode, a second electrode, a first photoactive region having a characteristic absorption wavelength λ1 and a second photoactive region having a characteristic absorption wavelength λ2. The photoactive regions are disposed between the first and second electrodes, and further positioned on the same side of a reflective layer, such that the first photoactive region is closer to the reflective layer than the second photoactive region. The materials comprising the photoactive regions may be selected such that λ1 is at least about 10% different from λ2. The device may further comprise an exciton blocking layer disposed adjacent to and in direct contact with the organic acceptor material of each photoactive region, wherein the LUMO of each exciton blocking layer other than that closest to the cathode is not more than about 0.3 eV greater than the LUMO of the acceptor material.