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公开(公告)号:US11355418B2
公开(公告)日:2022-06-07
申请号:US16921916
申请日:2020-07-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Chun-Hui Yu , Jeng-Nan Hung , Kuo-Chung Yee
IPC: H01L23/42 , H01L25/065 , H01L23/00 , H01L23/522 , H01L23/528 , H01L23/31
Abstract: A package structure includes a wafer-form semiconductor package and a thermal dissipating system. The wafer-form semiconductor package includes semiconductor dies electrically connected with each other. The thermal dissipating system is located on and thermally coupled to the wafer-form semiconductor package, where the thermal dissipating system has a hollow structure with a fluidic space, and the fluidic space includes a ceiling and a floor. The thermal dissipating system includes at least one inlet opening, at least one outlet opening and a plurality of first microstructures. The at least one inlet opening and the at least one outlet opening are spatially communicated with the fluidic space. The first microstructures are located on the floor, and at least one of the first microstructures is corresponding to the at least one outlet opening.
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公开(公告)号:US11328975B2
公开(公告)日:2022-05-10
申请号:US16942750
申请日:2020-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Chun-Hui Yu , Jeng-Nan Hung , Kuo-Chung Yee , Po-Fan Lin
Abstract: A semiconductor device including a substrate, a semiconductor package, a plurality of pillars and a lid is provided. The semiconductor package is disposed on the substrate and includes at least one semiconductor die. The plurality of pillars are disposed on the semiconductor package. The lid is disposed on the substrate and covers the semiconductor package and the plurality of pillars. The lid includes an inflow channel and an outflow channel to allow a coolant to flow into and out of a space between the substrate, the semiconductor package, the plurality of pillars and the lid. An inner surface of the lid, which faces and overlaps the plurality of pillars along a stacking direction of the semiconductor package and the lid, is a flat surface.
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53.
公开(公告)号:US11031344B2
公开(公告)日:2021-06-08
申请号:US16114246
申请日:2018-08-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee , Chun-Hui Yu
Abstract: Provided is a package including a die, a redistribution layer (RDL) structure, and a plurality of conductive connectors. The RDL structure includes a dielectric layer, a conductive feature, and a protective layer. The conductive feature is disposed in the dielectric layer and electrically connected to the die. The protective layer is disposed between the dielectric layer and the conductive feature. The protective layer, the dielectric layer, and the conductive feature have different materials. The plurality of conductive connectors are electrically connected to the die through the RDL structure.
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公开(公告)号:US20210159201A1
公开(公告)日:2021-05-27
申请号:US16935175
申请日:2020-07-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Chun-Hui Yu , Jeng-Nan Hung , Kuo-Chung Yee , Po-Fan Lin
Abstract: A structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The first bonding structure includes a first dielectric layer and first conductors embedded in the first dielectric layer. The second semiconductor die includes a second bonding structure. The second bonding structure includes a second dielectric layer and second conductors embedded in the second dielectric layer. The first dielectric layer is in contact with the second dielectric layer, and the first conductors are in contact with the second conductors. Thermal conductivity of the first dielectric layer and the second dielectric layer is greater than thermal conductivity of silicon dioxide.
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公开(公告)号:US20210098381A1
公开(公告)日:2021-04-01
申请号:US16852567
申请日:2020-04-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee
IPC: H01L23/538 , H01L23/498 , H01L21/48 , H01L21/56
Abstract: A semiconductor structure includes system-on-integrated chips, a first redistribution circuit structure and first conductive terminals. The system-on-integrated chips each include a die stack having two or more than two tiers, and each tier includes at least one semiconductor die. The first redistribution circuit structure is located on and electrically connected to the system-on-integrated chips. The first conductive terminals are connected on the first redistribution circuit structure, where the first redistribution circuit structure is located between the system-on-integrated chips and the first conductive terminals.
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公开(公告)号:US20210066279A1
公开(公告)日:2021-03-04
申请号:US16888874
申请日:2020-06-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Chun-Hui Yu , Kuo-Chung Yee , Liang-Ju Yen
IPC: H01L25/18 , H01L23/31 , H01L23/367 , H01L23/538 , H01L25/00
Abstract: One of semiconductor packages includes a substrate and a package structure. The package structure is bonded to the substrate and includes a first redistribution layer structure, a first logic die, a plurality of second logic dies, a first memory die, a first heat conduction block and a first encapsulant. The first logic die and the second logic dies are disposed over and electrically connected to the first redistribution layer structure. The first memory die is disposed over the first logic die and the second logic dies and electrically connected to first redistribution layer structure. The first heat conduction block is disposed over the first logic die and the second logic dies. The first encapsulant encapsulates the first memory die and the first heat conduction block.
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公开(公告)号:US20210028147A1
公开(公告)日:2021-01-28
申请号:US17068389
申请日:2020-10-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee , Tsung-Ding Wang , Chien-Hsun Lee
IPC: H01L25/065 , H01L25/00 , H01L23/00 , H01L21/56 , H01L23/498 , H01L21/768 , H01L23/31 , H01L23/367 , H01L23/522 , H01L25/18 , H01L21/48
Abstract: A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.
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公开(公告)号:US20200075496A1
公开(公告)日:2020-03-05
申请号:US16114246
申请日:2018-08-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee , Chun-Hui Yu
Abstract: Provided is a package including a die, a redistribution layer (RDL) structure, and a plurality of conductive connectors. The RDL structure includes a dielectric layer, a conductive feature, and a protective layer. The conductive feature is disposed in the dielectric layer and electrically connected to the die. The protective layer is disposed between the dielectric layer and the conductive feature. The protective layer, the dielectric layer, and the conductive feature have different materials. The plurality of conductive connectors are electrically connected to the die through the RDL structure.
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59.
公开(公告)号:US20200020643A1
公开(公告)日:2020-01-16
申请号:US16035711
申请日:2018-07-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee , Chun-Hui Yu
IPC: H01L23/552 , H01L25/065 , H01L23/31 , H01L23/498 , H01L23/00 , H01L25/00 , H01L21/56
Abstract: Semiconductor packages and methods of forming the same are provided. a semiconductor package includes a sub-package, a second die and a second molding layer. The sub-package includes a first die, a first molding layer aside the first die and a first redistribution layer structure disposed over the first die and the first molding layer and electrically connected to the first die. The second die is disposed over the sub-package, wherein the first die and the second die are disposed on opposite surfaces of the first redistribution layer structure. The second molding layer encapsulates the sub-package and the second die.
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公开(公告)号:US20200013636A1
公开(公告)日:2020-01-09
申请号:US16575698
申请日:2019-09-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Kuo-Chung Yee
IPC: H01L21/48 , H01L23/00 , H01L23/36 , H01L23/373 , H01L23/31 , H01L21/56 , H01L25/065 , H01L25/00
Abstract: A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip.
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