摘要:
To predict a future work status, a variation amount in working efficiency set according to progress of a work regarding the workload and a variation amount in a work resource are considered, and the working efficiency is compensated according compensation of a work resource amount. Data of variation patterns of the working efficiency and the number of workers are previously defined and stored. A variation pattern for each work is selected from the variation pattern data on the basis of a work schedule data stored in the work schedule data storing section. Variation of the workload resource, the workload, and the working efficiency are stored. The prediction result is displayed. Upon excess and lack in the prediction workload over the scheduled workload in a period may be transferred from that period to the next period and from the next to that period, respectively.
摘要:
A multi-chip press-connected type semiconductor device comprises: a plurality of active element chips to control an electric current flowing in one direction; a plurality of diode chips that transmit the current in a direction opposite to the current transmitting direction of said active element chip; and electrode plates for said active element chip and for said diode chip, said electrode plates pressing from above and under with said plurality of active element chips and said plurality of diode chips being interposed therebetween; wherein said diode chips are disposed in all of outermost peripheral chip positions with no-existence of other chips adjacent to at least one side of a chip in a chip disposing region, and are disposed in internal layout positions surrounded with the outermost peripheral chip positions, and said diode chips to be disposed in the internal layout positions are arranged in order of a total number of other chips from the smallest that exist adjacently to at least one of a side and a vertex of a chip.
摘要:
A method of manufacturing power semiconductor device, having an area of 3 cm.sup.2 or more, comprises the step of preparing a power semiconductor device divided into cell blocks and forming power semiconductor elements whose minimum linewidth is less than 10 .mu.m and having at least main electrodes completed in the cell blocks, the step of determining cell blocks having faulty portions, and the step of selectively electrically separating the main electrodes in the faulty cell blocks from the main electrodes in the good cell blocks.