公开(公告)号：US06764865B2

公开(公告)日：2004-07-20

申请号：US10615188

申请日：2003-07-09

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L400

CPC分类号： H01L27/222 ,  B82Y10/00

摘要： A semiconductor memory device includes a semiconductor substrate, and a first magneto resistive element separated from the semiconductor substrate, and including a first magnetic layer and a first nonmagnetic layer. The first magnetic layer and the first nonmagnetic layer are formed in a direction perpendicular to the semiconductor substrate.

摘要翻译： 半导体存储器件包括半导体衬底和与半导体衬底分离的第一磁阻元件，并包括第一磁性层和第一非磁性层。 第一磁性层和第一非磁性层在垂直于半导体衬底的方向上形成。

公开(公告)号：US06271081B1

公开(公告)日：2001-08-07

申请号：US09736238

申请日：2000-12-15

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L21336

摘要： Trench capacitors are arranged in the form of a matrix at a constant pitch in row directions while being sequentially shifted between adjacent rows by a predetermined pitch. An element isolating insulator film is formed so as to surround active regions, each of which is adjacent to adjacent two capacitors in row directions, together with a partial region of the two capacitors. Transistors, which have gate electrodes continuously formed as word lines, are formed so as to be adjacent to the respective capacitors. One of the source and drain diffusion layers is connected to the capacitor node layer of a corresponding one of the capacitors via a connecting conductor. The other of the source and drain diffusion layers serves as a bit line contact layer shared by adjacent two transistors in the row directions, so that bit lines connected to the respective bit line contact layers in the row directions are formed. Three word lines are provided between adjacent bit line contact layers. By providing such a layout of a DRAM cell array, it is possible to decrease the area occupied by a unit memory cell while ensuring the capacity of a trench capacitor.

公开(公告)号：US08503216B2

公开(公告)日：2013-08-06

申请号：US12887437

申请日：2010-09-21

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C13/0004 ,  G11C13/0007 ,  G11C2013/008 ,  G11C2213/79 ,  H01L27/2436 ,  H01L29/785 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

摘要： According to one embodiment, a resistance change type memory includes a memory cell and a capacitor which are provided on a semiconductor substrate. The memory cell includes a resistance change type memory and a select transistor. The resistance change type storage element changes in resistance value in accordance with data to be stored. The select transistor includes a first semiconductor region provided in the semiconductor substrate, and a gate electrode facing the side surface of the first semiconductor region via a gate insulating film. The capacitor includes a second semiconductor region provided in the semiconductor substrate, a capacitor electrode facing the side surface of the second semiconductor region, and a first capacitor insulating film provided between the second semiconductor region and the capacitor electrode.

摘要翻译： 根据一个实施例，电阻变化型存储器包括设置在半导体衬底上的存储单元和电容器。 存储单元包括电阻变化型存储器和选择晶体管。 电阻变化型存储元件根据要存储的数据改变电阻值。 选择晶体管包括设置在半导体衬底中的第一半导体区域和经由栅极绝缘膜与第一半导体区域的侧表面对置的栅电极。 电容器包括设置在半导体衬底中的第二半导体区域，与第二半导体区域的侧表面相对的电容器电极，以及设置在第二半导体区域和电容器电极之间的第一电容器绝缘膜。

公开(公告)号：US08357982B2

公开(公告)日：2013-01-22

申请号：US12873094

申请日：2010-08-31

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory according to an embodiment includes a magnetoresistive effect element and a fourth magnetic layer which is provided on the side surface of the magnetoresistive effect element via an insulating film. The magnetoresistive effect element has a first magnetic layer of which the magnetization direction is variable, a second magnetic layer of which the magnetization direction fixed, a third magnetic layer of which the magnetization direction parallel to a film plane is variable, and an intermediate layer between the first magnetic layer and the second magnetic layer. The fourth magnetic layer collects a magnetic field generated from the end of the third magnetic layer.

摘要翻译： 根据一个实施例，根据实施例的磁存储器包括磁阻效应元件和通过绝缘膜设置在磁阻效应元件的侧表面上的第四磁性层。 磁阻效应元件具有磁化方向可变的第一磁性层，固定磁化方向的第二磁性层，平行于膜平面的磁化方向的第三磁性层是可变的，以及介于 第一磁性层和第二磁性层。 第四磁性层收集从第三磁性层的端部产生的磁场。

公开(公告)号：US20090154224A1

公开(公告)日：2009-06-18

申请号：US12333472

申请日：2008-12-12

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/416

CPC分类号： G11C11/1675 ,  G11C11/161

摘要： A spin transfer type magnetic random access memory includes a magnetoresistive effect element including a fixed layer, a recording layer, and a nonmagnetic layer, a source line connected to one terminal of the magnetoresistive effect element, a transistor having a current path whose one end is connected to the other terminal of the magnetoresistive effect element, a bit line connected to the other end of the current path of the transistor, and running parallel to the source line, and a source/sinker which supplies a write current between the source line and the bit line via the magnetoresistive effect element and the transistor, a direction in which a magnetic field generated by the write current having passed through the bit line is applied to the magnetoresistive effect element being opposite to a direction of the write current passing through the magnetoresistive effect element.

摘要翻译： 自旋转移型磁性随机存取存储器包括具有固定层，记录层和非磁性层的磁阻效应元件，与磁阻效应元件的一个端子连接的源极线，具有一端为 连接到磁阻效应元件的另一个端子，连接到晶体管的电流路径的另一端并且平行于源极线并行的位线，以及在源极线和源极线之间提供写入电流的源极/ 通过磁阻效应元件和晶体管的位线，将通过位线的写入电流产生的磁场施加到与通过磁阻的写入电流的方向相反的磁阻效应元件的方向 效果元素。

公开(公告)号：US20080089118A1

公开(公告)日：2008-04-17

申请号：US11797530

申请日：2007-05-04

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： G11C11/00 ,  H01L21/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/155 ,  H01L27/228 ,  H01L27/24

摘要： A magnetic random access memory includes a magnetoresistive effect element having a fixed layer in which a magnetization direction is fixed, a recording layer in which a magnetization direction is reversible, and a nonmagnetic layer formed between the fixed layer and the recording layer, a hollow portion being formed in a center of the recording layer, and the magnetization directions in the fixed layer and the recording layer taking one of a parallel state and an antiparallel state in accordance with a direction of an electric current supplied between the fixed layer and the recording layer, an insulating layer formed in the hollow portion, a wiring connected to one terminal of the magnetoresistive effect element, and a transistor connected to the other terminal of the magnetoresistive effect element.

摘要翻译： 磁性随机存取存储器包括具有固定磁化方向的固定层的磁阻效应元件，磁化方向可逆的记录层和形成在固定层和记录层之间的非磁性层，中空部分 形成在记录层的中心，并且固定层和记录层中的磁化方向根据在固定层和记录层之间提供的电流的方向取平行状态和反平行状态 形成在中空部分中的绝缘层，连接到磁阻效应元件的一个端子的布线和连接到磁阻效应元件的另一个端子的晶体管。

公开(公告)号：US07151691B2

公开(公告)日：2006-12-19

申请号：US10936693

申请日：2004-09-09

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： G11C11/00

CPC分类号： G11C11/15 ,  G11C11/1659 ,  G11C2213/71

摘要： MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. A first conductive line functioning as a read line and extending in the X direction is connected to pin layers of the MTJ elements. A second conductive line functioning as a write line and read line and extending in the X direction is connected to free layers of the MTJ elements. A write line extends in the Y direction and is shared with two MTJ elements present above and below the write line. The two MTJ elements present above and below the write line are arranged symmetric to the write line.

公开(公告)号：US07141842B2

公开(公告)日：2006-11-28

申请号：US10736831

申请日：2003-12-17

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L31/062

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic memory device includes a memory cell which has a first wiring line composed of a first wiring layer, a second wiring line composed of a second wiring layer and provided above or below the first wiring line so as to cross the first wiring line, and a magnetoresistive effect element device provided in a position where the first wiring line and the second wiring line cross each other. The device further includes a peripheral circuit which includes a third wiring line provided around the memory cell and composed of the first wiring layer, a fourth wiring line provided above or below the third wiring line and composed of the second wiring layer, and at least one magnetic layer forming the magnetoresistive effect element device and provided between the third wiring line and the fourth wiring line.

摘要翻译： 一种磁存储器件，包括：具有由第一布线层构成的第一布线和由第二布线层构成的第二布线并且设置在第一布线的上方或下方以跨越第一布线的存储单元;以及 设置在第一布线和第二布线彼此交叉的位置处的磁阻效应元件装置。 该装置还包括外围电路，其包括设置在存储单元周围并由第一布线层构成的第三布线，设置在第三布线的上方或下方并由第二布线层构成的第四布线，以及至少一个 形成磁阻效应元件的磁性层，设置在第三布线和第四布线之间。

公开(公告)号：US20060132984A1

公开(公告)日：2006-06-22

申请号：US11060301

申请日：2005-02-18

申请人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa

发明人： Takeshi Kajiyama ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Hisanori Aikawa ,  Masatoshi Yoshikawa

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/222 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12

摘要： A magnetic memory device includes a magnetoresistance effect element, and a first write interconnection which is arranged under the magnetoresistance effect element and has a first interconnection layer and a first yoke layer, the first interconnection layer having a portion projecting toward the magnetoresistance effect element, and the first yoke layer including a first, a second, and third regions. And the device includes a second write interconnection which is arranged above the magnetoresistance effect element and has a second interconnection layer and a second yoke layer, the second interconnection layer having a portion projecting toward the magnetoresistance effect element, and the second yoke layer including a fourth, a fifth, and sixth regions.

摘要翻译： 一种磁存储器件包括磁阻效应元件和布置在磁阻效应元件下方并具有第一互连层和第一磁轭层的第一写入互连，第一互连层具有向磁阻效应元件突出的部分，以及 所述第一轭层包括第一，第二和第三区域。 并且该器件包括布置在磁阻效应元件上方并具有第二互连层和第二磁轭层的第二写入互连，第二互连层具有朝向磁阻效应元件突出的部分，第二磁轭层包括第四配线 ，第五和第六个地区。

公开(公告)号：US06967864B2

公开(公告)日：2005-11-22

申请号：US10866129

申请日：2004-06-14

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/22 ,  H01L43/08 ,  G11C7/00

CPC分类号： H01L27/222 ,  B82Y10/00

摘要： A semiconductor memory device includes a semiconductor substrate, and a first magneto resistive element separated from the semiconductor substrate, and including a first magnetic layer and a first nonmagnetic layer. The first magnetic layer and the first nonmagnetic layer are formed in a direction perpendicular to the semiconductor substrate.

摘要翻译： 半导体存储器件包括半导体衬底和与半导体衬底分离的第一磁阻元件，并且包括第一磁性层和第一非磁性层。 第一磁性层和第一非磁性层在垂直于半导体衬底的方向上形成。