公开(公告)号：US08941197B2

公开(公告)日：2015-01-27

申请号：US13370075

申请日：2012-02-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao

发明人： Takeshi Kajiyama ,  Yoshiaki Asao

IPC分类号： H01L27/22 ,  G11C11/16

CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10

摘要： A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.

摘要翻译： 一种磁性随机存取存储器，其是包括具有固定磁化方向的固定层的磁阻效应元件，其磁化方向可逆的记录层和设置在固定层与记录层之间的非磁性层的存储单元阵列 其中，布置在磁阻效应元件下方的存储单元阵列中的所有导电层由各自含有选自包括W，Mo，Ta，Ti，Zr，Nb，Cr，Hf，V，Co和 倪

公开(公告)号：US08592928B2

公开(公告)日：2013-11-26

申请号：US13237586

申请日：2011-09-20

申请人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

发明人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层， 电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

公开(公告)号：US20120068286A1

公开(公告)日：2012-03-22

申请号：US13237586

申请日：2011-09-20

申请人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

发明人： Keiji Hosotani ,  Hiroyuki Kanaya ,  Takeshi Kajiyama

IPC分类号： H01L29/82 ,  H01L21/20

CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic random access memory includes a selection element formed on a semiconductor substrate, an interlayer dielectric film formed above the selection element, a contact layer formed in the interlayer dielectric film, and electrically connected to the selection element, a lower electrode layer made of a metal material, and electrically connected to the contact layer, a metal oxide insulating film made of an oxide of the metal material, and surrounding a side surface of the lower electrode layer, a magnetoresistive element formed on the lower electrode layer, an upper electrode layer formed on the magnetoresistive element, a sidewall insulating film formed on a side surface of the magnetoresistive element and a side surface of the upper electrode layer, and a bit line electrically connected to the upper electrode layer.

摘要翻译： 根据一个实施例，磁性随机存取存储器包括形成在半导体衬底上的选择元件，形成在选择元件上方的层间电介质膜，形成于层间电介质膜中的电连接到选择元件的接触层， 电极层，与金属材料电连接，由金属材料的氧化物构成的金属氧化物绝缘膜，围绕下部电极层的侧面，形成在下部电极层上的磁阻元件 形成在磁阻元件上的上电极层，形成在磁阻元件的侧面上的侧壁绝缘膜和上电极层的侧面，以及与上电极层电连接的位线。

公开(公告)号：US07564109B2

公开(公告)日：2009-07-21

申请号：US10917300

申请日：2004-08-13

申请人： Takeshi Kajiyama ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Masatoshi Yoshikawa

发明人： Takeshi Kajiyama ,  Hisanori Aikawa ,  Tomomasa Ueda ,  Tatsuya Kishi ,  Masatoshi Yoshikawa

IPC分类号： G11C11/00 ,  G11C11/14 ,  H01L21/8246

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And the device includes a magneto-resistance effect element provided on the first write wiring line.

摘要翻译： 磁存储器件包括：第一写入布线，其包括形成在绝缘层中的沟槽中的布线层;掩埋在布线层上的沟槽中的阻挡金属层。 并且该器件包括设置在第一写入布线上的磁阻效应元件。

公开(公告)号：US07262449B2

公开(公告)日：2007-08-28

申请号：US10847362

申请日：2004-05-18

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/76

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

摘要： A magnetic random access memory according to an aspect of the present invention comprises a first magnetic layer in which a magnetization state is fixed, a second magnetic layer which has a shape different from that of the first magnetic layer and in which a magnetization state varies in accordance with write data, a non-magnetic layer which is arranged between the first magnetic layer and the second magnetic layer, and a third magnetic layer which surrounds the second magnetic layer.

摘要翻译： 根据本发明的一个方面的磁性随机存取存储器包括其中固定有磁化状态的第一磁性层，具有与第一磁性层的形状不同的磁化状态变化的第二磁性层 根据写入数据，布置在第一磁性层和第二磁性层之间的非磁性层和围绕第二磁性层的第三磁性层。

公开(公告)号：US20070164265A1

公开(公告)日：2007-07-19

申请号：US11563420

申请日：2006-11-27

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/04

CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1293

摘要： A semiconductor memory device includes a first write line which is provided in a first direction, a first memory element which is connected to the first write line, a second memory element which is provided to neighbor the first memory element in the first direction, and is connected to the first write line, a first insulation film which is provided on surfaces of the first and second memory elements, and a second insulation film which is provided between the neighboring first and second memory elements and has a lower heat conductivity than the first insulation film.

摘要翻译： 一种半导体存储器件，包括：沿第一方向设置的第一写入线，连接到第一写入线的第一存储器元件，设置成在第一方向上与第一存储元件相邻的第二存储元件， 连接到第一写入线，设置在第一和第二存储元件的表面上的第一绝缘膜，以及设置在相邻的第一和第二存储元件之间并且具有比第一绝缘体更低的热导率的第二绝缘膜 电影。

公开(公告)号：US07205564B2

公开(公告)日：2007-04-17

申请号：US10979327

申请日：2004-11-03

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L29/08 ,  G11C11/00

CPC分类号： H01L27/24 ,  B82Y10/00 ,  G11C11/16 ,  H01L27/224 ,  H01L51/0062 ,  H01L51/0078

摘要： A resistance change memory includes a memory element, and a first organic semiconductor layer in contact with the memory element.

摘要翻译： 电阻变化存储器包括存储元件和与存储元件接触的第一有机半导体层。

公开(公告)号：US06906372B2

公开(公告)日：2005-06-14

申请号：US09993967

申请日：2001-11-27

申请人： Takashi Yamada ,  Takeshi Kajiyama

发明人： Takashi Yamada ,  Takeshi Kajiyama

IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L27/12 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/10864 ,  H01L27/10841 ,  H01L27/10867 ,  H01L27/10876 ,  H01L27/10891 ,  H01L27/1203

摘要： A semiconductor device has an element substrate including a semiconductor layer of a first conductivity type being formed over a semiconductor substrate with a dielectric film interposed therebetween. A groove is formed in the element substrate with a depth extending from a top surface of the semiconductor layer into the dielectric film, the groove having a width-increased groove portion in the dielectric film as to expose a bottom surface of the semiconductor layer. An impurity diffusion source is buried in the width-increased groove portion to be contacted with the bottom surface. A transistor is formed to have a first diffusion layer being formed through impurity diffusion from the impurity diffusion source to the bottom surface of the semiconductor layer, a second diffusion layer formed through impurity diffusion to the top surface of the semiconductor layer, and a gate electrode formed at a side face of the groove over the impurity diffusion source with a gate insulation film between the side face and the gate electrode.

摘要翻译： 半导体器件具有包括第一导电类型的半导体层的元件衬底，该半导体层形成在半导体衬底上，介于其间的电介质膜。 在元件基板中形成有从半导体层的顶表面延伸到电介质膜的深度的凹槽，该凹槽在电介质膜中具有宽度增加的沟槽部分，以露出半导体层的底表面。 杂质扩散源被埋在宽度增加的槽部分中以与底表面接触。 晶体管形成为具有通过从杂质扩散源到半导体层的底面的杂质扩散而形成的第一扩散层，通过杂质向半导体层的顶表面形成的第二扩散层，以及栅电极 在所述杂质扩散源的所述沟槽的侧面上形成有在所述侧面和所述栅电极之间的栅极绝缘膜。

公开(公告)号：US20050070033A1

公开(公告)日：2005-03-31

申请号：US10736831

申请日：2003-12-17

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L27/10 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： H01L27/228 ,  B82Y10/00

摘要： A magnetic memory device includes a memory cell which has a first wiring line composed of a first wiring layer, a second wiring line composed of a second wiring layer and provided above or below the first wiring line so as to cross the first wiring line, and a magnetoresistive effect element device provided in a position where the first wiring line and the second wiring line cross each other. The device further includes a peripheral circuit which includes a third wiring line provided around the memory cell and composed of the first wiring layer, a fourth wiring line provided above or below the third wiring line and composed of the second wiring layer, and at least one magnetic layer forming the magnetoresistive effect element device and provided between the third wiring line and the fourth wiring line.

摘要翻译： 一种磁存储器件，包括：具有由第一布线层构成的第一布线和由第二布线层构成的第二布线并且设置在第一布线的上方或下方以跨越第一布线的存储单元;以及 设置在第一布线和第二布线彼此交叉的位置处的磁阻效应元件装置。 该装置还包括外围电路，其包括设置在存储单元周围并由第一布线层构成的第三布线，设置在第三布线的上方或下方并由第二布线层构成的第四布线，以及至少一个 形成磁阻效应元件的磁性层，设置在第三布线和第四布线之间。

公开(公告)号：US06617658B2

公开(公告)日：2003-09-09

申请号：US10125485

申请日：2002-04-19

申请人： Takeshi Kajiyama

发明人： Takeshi Kajiyama

IPC分类号： H01L27108

CPC分类号： H01L27/222 ,  B82Y10/00

摘要： A semiconductor memory device includes a semiconductor substrate, and a first magneto resistive element separated from the semiconductor substrate, and including a first magnetic layer and a first nonmagnetic layer. The first magnetic layer and the first nonmagnetic layer are formed in a direction perpendicular to the semiconductor substrate.

摘要翻译： 半导体存储器件包括半导体衬底和与半导体衬底分离的第一磁阻元件，并且包括第一磁性层和第一非磁性层。 第一磁性层和第一非磁性层在垂直于半导体衬底的方向上形成。