公开(公告)号：US5214001A

公开(公告)日：1993-05-25

申请号：US640499

申请日：1991-01-14

申请人： Takashi Ipposhi ,  Kazuyuki Sugahara

发明人： Takashi Ipposhi ,  Kazuyuki Sugahara

IPC分类号： H01L21/20 ,  H01L21/304 ,  H01L21/762

CPC分类号： H01L21/304 ,  H01L21/2026 ,  H01L21/76248

摘要： A manufacturing method of a semiconductor device having a planar single crystal semiconductor surface is disclosed. In the manufacturing method of a semiconductor device, an insulating film is formed on a semiconductor substrate, a noncrystal semiconductor film is formed on the insulating film, a stripe-like anti-reflection film is formed on the noncrystal semiconductor film, and laser beam is irradiated along the anti-reflection film. Because of the difference in temperature, a film with thicknesses different in a substrate region in which the anti-reflection film is formed and a region around it is formed. A film to be a machining allowance for polishing is formed on the single crystal semiconductor film, polishing is performed from the side of said film to be a machining allowance for polishing so that desired planar film thickness of the single crystal semiconductor film is implemented.

摘要翻译： 公开了具有平面单晶半导体表面的半导体器件的制造方法。 在半导体装置的制造方法中，在半导体基板上形成绝缘膜，在绝缘膜上形成非晶半导体膜，在非晶半导体膜上形成条状的防反射膜，激光束为 沿抗反射膜照射。 由于温度的差异，形成了在其中形成防反射膜的基板区域和其周围的区域具有不同厚度的膜。 在单晶半导体膜上形成作为研磨加工余量的膜，从所述膜的侧面进行研磨，作为研磨用的加工余量，从而实现单晶半导体膜的期望的平面膜厚。

公开(公告)号：US5128732A

公开(公告)日：1992-07-07

申请号：US199439

申请日：1988-05-27

申请人： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue ,  Yasuo Yamaguchi

发明人： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue ,  Yasuo Yamaguchi

IPC分类号： H01L27/06

CPC分类号： H01L27/0688

摘要： A stacked semiconductor device has three-dimensional alternate layers of iconductor elements and insulating layers each electrically insulating the adjacent upper and lower layers of semiconductor elements, formed on a single crystal semiconductor substrate. A semiconductor is deposited in openings formed respectively in the insulating layers to form single crystal semiconductor layers each having the same crystal axis as the single crystal semiconductor substrate respectively over the insulating layers, and semiconductor elements are formed respectively in a plurality of layers. The opening formed through the upper insulating layer reaches the lower layer of the semiconductor element immediately below the same upper insulating layer, and is formed at a position spaced apart horizontally from the opening formed through the lower insulating layer immediately below the same upper insulating layer. A semiconductor for forming the upper layer of a semiconductor having the same crystal axis as the lower layer of a semiconductor is deposited in the opening of the upper insulating layer so that satisfactory lateral epitaxial growth will occur over the insulating layer.

摘要翻译： 叠层半导体器件具有三维交替层的半导体元件和绝缘层，每个绝缘层将形成在单晶半导体衬底上的相邻的半导体元件的上层和下层电绝缘。 分别在绝缘层中形成的开口中沉积半导体，以形成分别在绝缘层上分别与单晶半导体衬底相同的晶轴的单晶半导体层，并分别形成多个半导体元件。 通过上绝缘层形成的开口到达同一上绝缘层正下方的半导体元件的下层，并形成在与通过同一上绝缘层正下方的下绝缘层形成的开口水平间隔开的位置处。 用于形成具有与半导体的下层相同的晶轴的半导体的上层的半导体被沉积在上绝缘层的开口中，使得在绝缘层上将发生令人满意的横向外延生长。

公开(公告)号：US4870031A

公开(公告)日：1989-09-26

申请号：US102655

申请日：1987-09-30

申请人： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue

发明人： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue

IPC分类号： H01L21/20 ,  H01L21/263 ,  H01L21/822 ,  H01L21/84 ,  H01L27/00

CPC分类号： H01L21/8221 ,  H01L21/2026 ,  Y10S117/904 ,  Y10S117/905 ,  Y10S148/09

摘要： In a method of manufacturing a semiconductor device comprising melting an amorphous or polycrystalline first semiconductor layer formed on the surface of a first dielectric layer by irradiating energy rays thereon, and converting the same into single crystals by the subsequent lowering of the temperature and forming a second dielectric layer and a second semiconductor layer on the first semiconductor layer. Energy rays are irradiated under the condition capable of melting the first semiconductor layer through the second semiconductor layer and the second dielectric layer and, after the completion of the conversion into single crystals, the second semiconductor layer and the second dielectric layer are eliminated through etching.

摘要翻译： 在制造半导体器件的方法中，包括通过照射第一介电层的表面上的能量射线来熔化形成在第一介电层的表面上的非晶或多晶的第一半导体层，并且随后降低温度并将其转变为单晶 电介质层和第一半导体层上的第二半导体层。 在能够通过第二半导体层和第二电介质层熔化第一半导体层的条件下照射能量射线，并且在完成转换成单晶之后，通过蚀刻去除第二半导体层和第二电介质层。

公开(公告)号：US4778269A

公开(公告)日：1988-10-18

申请号：US11511

申请日：1987-02-06

申请人： Yasuo Inoue ,  Tadashi Nishimura ,  Kazuyuki Sugahara ,  Shigeru Kusunoki

发明人： Yasuo Inoue ,  Tadashi Nishimura ,  Kazuyuki Sugahara ,  Shigeru Kusunoki

IPC分类号： G01N21/21 ,  G01N21/65 ,  G01N21/84 ,  G01J3/44

CPC分类号： G01N21/65 ,  G01N2021/656 ,  G01N2021/8477 ,  G01N21/21

摘要： In a method for determining orientation of a crystal with polarization selective Raman microprobe spectroscopy, polarization angles of both light incident on the crystal and Raman scattered light emitted from the crystal are varied coincidently in ordinary circumstances and only either one of the polarization angles is varied in only case that intensity of the scattered beam does not change substantially in spite of the coincident variation of both the polarization angles.

摘要翻译： 在通过偏振选择拉曼微探针光谱法确定晶体取向的方法中，入射到晶体上的两个光的偏振角和从晶体发射的拉曼散射光在一般情况下一致地变化，并且只有任一个偏振角在 只是散射光的强度几乎不变化，尽管两个偏振角都是一致的变化。

公开(公告)号：US4714684A

公开(公告)日：1987-12-22

申请号：US844324

申请日：1986-03-26

申请人： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue

发明人： Kazuyuki Sugahara ,  Tadashi Nishimura ,  Shigeru Kusunoki ,  Yasuo Inoue

IPC分类号： H01L21/20 ,  H01L21/263 ,  H01L21/822 ,  H01L27/00 ,  C30B13/06

CPC分类号： H01L21/2026 ,  H01L21/8221 ,  Y10S117/904 ,  Y10S148/093

摘要： In a method of manufacturing a semiconductor device of a three-dimensional structure having a semiconductor substrate and another single crystal semiconductor layer formed thereon, the another single crystal semiconductor layer is prepared by melting a vapor-deposited amorphous or polycrystalline semiconductor layer by the energy of laser beams then solidifying and converting the layer into single crystals. For initiating the melting at selected regions of the layer, the layer is formed at the surface thereof with a silicon nitride film of a uniform thickness and a silicon nitride film with a thickness at the region corresponding to the selected region different from that of the remaining region. The region thicker or thinner than other region reflects the laser energy at different reflectivity thereby to provide a desired temperature distribution.

摘要翻译： 在制造具有半导体衬底和形成在其上的另一个单晶半导体层的三维结构的半导体器件的方法中，另一个单晶半导体层是通过将蒸镀的非晶或多晶半导体层的能量 然后激光束固化并将层转化为单晶。 为了在层的选定区域开始熔化，在其表面上形成具有均匀厚度的氮化硅膜和在对应于所选区域的区域的厚度的氮化硅膜的层 地区。 比其他区域更厚或更薄的区域反映了不同反射率下的激光能量，从而提供期望的温度分布。

公开(公告)号：US4661167A

公开(公告)日：1987-04-28

申请号：US677343

申请日：1984-12-03

申请人： Shigeru Kusunoki ,  Tadashi Nishimura ,  Kazuyuki Sugahara

发明人： Shigeru Kusunoki ,  Tadashi Nishimura ,  Kazuyuki Sugahara

IPC分类号： H01L27/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/762 ,  H01L29/78 ,  H01L29/786 ,  H01L21/263

CPC分类号： H01L21/76264 ,  H01L21/2026 ,  H01L29/78654 ,  H01L21/76272 ,  H01L21/76281 ,  Y10S117/904 ,  Y10S148/164

摘要： A method for manufacturing a semiconductor device, which comprises: a first process for producing a semiconductor layer of polycrystalline silicon or amorphous silicon on the surface of a substrate of insulator or a substrate made up by forming an insulating layer on a basic semiconductor; a second process for producing an island of semiconductor layer surrounded by dielectric materials from the semiconductor layer; a third process for producing a film of Si.sub.3 N.sub.4 on the island of semiconductor layer, or on a film of SiO.sub.2 formed on the island; a fourth process for removing the film of Si.sub.3 N.sub.4 at a predetermined region on the island; and a fifth process for irradiating with scanning an energy beam to the island of semiconductor layer so as to melt and recrystallize the island, thereby monocrystallizing or increasing the size of crystal grains at at least a partial region thereof.

摘要翻译： 一种半导体器件的制造方法，其特征在于，包括：通过在基础半导体上形成绝缘层而构成的绝缘体或基板的基板的表面上制造多晶硅或非晶硅的半导体层的第一工序; 用于制造由半导体层被电介质材料包围的半导体层的岛的第二工艺; 在半导体层的岛上或在岛上形成的SiO 2膜上制造Si 3 N 4的膜的第3工序; 在岛上的预定区域除去Si 3 N 4膜的第四工序; 以及将能量束扫描到半导体层的岛上以便使岛熔融并重结晶的第五种方法，从而在其至少部分区域上单晶化或增加晶粒的尺寸。