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    Magnetic memory device with current carrying reference layer
    51.
    发明授权
    Magnetic memory device with current carrying reference layer 有权
    具有载流参考层的磁存储器件

    公开(公告)号：US07050326B2

    公开(公告)日：2006-05-23

    申请号：US10680451

    申请日：2003-10-07

    申请人： Thomas Anthony

    发明人： Thomas Anthony

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： One embodiment of a magnetic memory cell includes a first line and a sense layer in electrical communication with the first line. A reference layer line is configured to carry a sense current received from the sense layer. The sense current flows from the first line through the sense layer and away from the memory cell via the reference layer to determine a resistive state of the memory cell.

    摘要翻译： 磁存储单元的一个实施例包括与第一线电连通的第一线和感测层。 参考层线被配置为承载从感测层接收的感测电流。 感测电流从第一行流过感测层，并通过参考层离开存储单元，以确定存储单元的电阻状态。

    Thermally written magnetic memory device
    52.
    发明申请
    Thermally written magnetic memory device 有权
    热写磁存储器件

    公开(公告)号：US20060017126A1

    公开(公告)日：2006-01-26

    申请号：US10898279

    申请日：2004-07-23

    申请人： Manoj Bhattacharyya ,  Thomas Anthony

    发明人： Manoj Bhattacharyya ,  Thomas Anthony

    IPC分类号： H01L43/00

    CPC分类号： H01L27/222 ,  G11C11/16 ,  G11C11/1675

    摘要： A thermally written magnetic memory device is disclosed. The thermally written magnetic memory device includes a plurality of thermally written magnetic tunnel junction devices. Each thermally written magnetic tunnel junction device includes a super-paramagnetically stable data layer. The data layer includes a high coercivity at a read temperature such that a bit of data previously written to the data layer at a higher write temperature can be read from the data layer at the read temperature. The data layer has a low coercivity at the higher write temperature and data is written to the data layer at the higher write temperature. Therefore, at the lower read temperature, the thermally written magnetic memory device is a read only non-volatile memory and the data stored therein can be read many times but new data cannot be written to the data layer at the read temperature.

    摘要翻译： 公开了一种热写磁存储器件。 热写磁存储器件包括多个热写磁力隧道结器件。 每个热写磁隧道结器件包括一个超顺磁性稳定的数据层。 数据层在读取温度下包括高矫顽力，使得可以在读取温度下从数据层读取先前写入数据层的写入温度较高的数据位。 数据层在写入温度较高时具有较低的矫顽力，并且数据在写入温度较高时被写入数据层。 因此，在较低的读取温度下，热写磁存储器件是只读非易失性存储器，并且其中存储的数据可以被读取多次，但是在读取温度下不能将新数据写入数据层。