公开(公告)号：US20050047199A1

公开(公告)日：2005-03-03

申请号：US10649076

申请日：2003-08-27

申请人： Frederick Perner ,  Kenneth Smith ,  Thomas Anthony

发明人： Frederick Perner ,  Kenneth Smith ,  Thomas Anthony

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/15

摘要： Method and apparatus for coupling conductors in magnetic memory. In some embodiments, the memory element comprises: a first magnetic memory element, a first group of conductors magnetically coupled to the first magnetic memory element, a second magnetic memory element, a second group of conductors magnetically coupled to the second magnetic memory element, where the second magnetic memory element is substantially vertical to the first, and the first and second group of conductors have at least one conductor in common.

公开(公告)号：US20050254292A1

公开(公告)日：2005-11-17

申请号：US10843787

申请日：2004-05-11

申请人： Thomas Anthony ,  Frederick Perner ,  Heon Lee ,  Robert Walmsley

发明人： Thomas Anthony ,  Frederick Perner ,  Heon Lee ,  Robert Walmsley

IPC分类号： G11C11/14 ,  G11C11/16

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.

摘要翻译： 本发明提供了一种磁存储器件，其包括通过施加磁场在两个状态之间切换的磁存储器单元，其中用于这种切换的磁场部分地取决于存储单元温度。 该装置还包括靠近磁存储器单元的至少一个加热器元件，并且与磁存储单元连接的用于加热磁存储单元的串联。 该装置还包括用于选择性地施加电流通过至少一个加热器元件以便加热电池并促进电池状态切换的电路。

公开(公告)号：US20050237795A1

公开(公告)日：2005-10-27

申请号：US10832912

申请日：2004-04-26

申请人： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

发明人： Frederick Perner ,  Thomas Anthony ,  Robert Walmsley ,  Lung Tran

IPC分类号： G11C11/16 ,  G11C11/14

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field is established by a first write current flowing from a first voltage potential to a second voltage potential as applied to the first conductor. A second write magnetic field is established by a second write current flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor. The voltage potential of the first conductor is greater than the voltage potential of the second conductor. As a result, a third current, flows from the first conductor through the SVM cell to the second conductor. The SVM cell has an internal resistance such that the flowing current generates heat within the SVM cell. As the SVM cell is self heated, the coercivity of the SVM cell falls below the combined write magnetic fields.

摘要翻译： 在具有其中矫顽力在温度升高时减小的材料的所选择的两个导体自旋阀存储器（SVM）单元上进行热辅助写入操作的方法。 在特定实施例中，当施加到第一导体时，通过从第一电压电位流向第二电压电位的第一写入电流建立第一写入磁场。 第二写入磁场通过施加到第二导体的从第三电压电位流向第四电压电位的第二写入电流来建立。 第一导体的电压电位大于第二导体的电压电位。 结果，第三电流从第一导体流过SVM电池流到第二导体。 SVM单元具有内部电阻，使得流动电流在SVM单元内产生热量。 由于SVM单元是自加热的，所以SVM单元的矫顽力低于组合的写入磁场。

公开(公告)号：US20050152182A1

公开(公告)日：2005-07-14

申请号：US10753539

申请日：2004-01-08

申请人： Thomas Anthony ,  Frederick Perner ,  Heon Lee

发明人： Thomas Anthony ,  Frederick Perner ,  Heon Lee

IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L43/08

CPC分类号： G11C11/15

摘要： A random access memory (MRAM) that includes a magnetic memory cell that is switchable between two states under the influence of a magnetic field. The MARAM also includes an electrical bit line coupled to the magnetic memory cell for generating the magnetic field. The electrical bit line includes a conductive component and a magnetic component to guide magnetic flux associated with the magnetic field towards the magnetic memory cell. A thermal insulator is positioned between the conductive portion and the magnetic memory cell, and the magnetic component has at least one guiding portion that extends from the conductive component towards the magnetic memory cell to guide the magnetic flux around at least a portion of the thermal insulator.

摘要翻译： 一种随机存取存储器（MRAM），其包括在磁场影响下在两个状态之间切换的磁存储单元。 MARAM还包括耦合到磁存储单元的电位线，用于产生磁场。 电位线包括导电部件和磁性部件，以将与磁场相关联的磁通量引向磁存储器单元。 热绝缘体位于导电部分和磁存储单元之间，并且磁性部件具有至少一个引导部分，该引导部分从导电部件朝向磁存储器单元延伸，以引导围绕热绝缘体的至少一部分的磁通量 。

公开(公告)号：US20050077555A1

公开(公告)日：2005-04-14

申请号：US10681483

申请日：2003-10-08

申请人： Frederick Perner ,  Thomas Anthony

发明人： Frederick Perner ,  Thomas Anthony

IPC分类号： H01L27/10 ,  G11C7/18 ,  G11C11/15 ,  H01L21/00 ,  H01L21/82 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08

CPC分类号： H01L27/222 ,  G11C11/15

摘要： A memory includes an array of magnetic memory cells, each magnetic memory cell being adapted to store a bit of information, interconnects in communication with the magnetic memory cells, and conductors in communication with the magnetic memory cells and the interconnects, the conductors filling spaces between adjacent magnetic memory cells of the array.

摘要翻译： 存储器包括磁存储器单元阵列，每个磁存储单元适于存储信息位，与磁存储单元通信的互连以及与磁存储单元和互连通信的导体，导体之间填充空间 阵列的相邻磁存储单元。

公开(公告)号：US20050052902A1

公开(公告)日：2005-03-10

申请号：US10657519

申请日：2003-09-08

申请人： Kenneth Smith ,  Thomas Anthony ,  Lung Tran

发明人： Kenneth Smith ,  Thomas Anthony ,  Lung Tran

IPC分类号： G11C11/15 ,  G11C11/00

CPC分类号： G11C11/15 ,  G11C11/1675

摘要： A memory device including an array of magnetic storage cells is disclosed. Each magnetic storage cell in the array includes a set of conductors used to write data to a storage cell and a second set of conductors used to heat the magnetic storage cell and read data from the magnetic storage cell. The magnetic storage cells can be used in electronic systems such as a computer system or consumer electronic system.

摘要翻译： 公开了一种包括磁存储单元阵列的存储器件。 阵列中的每个磁存储单元包括用于向存储单元写入数据的一组导体和用于加热磁存储单元并从磁存储单元读取数据的第二组导体。 磁存储单元可用于诸如计算机系统或消费电子系统的电子系统中。

公开(公告)号：US20120154480A1

公开(公告)日：2012-06-21

申请号：US12975101

申请日：2010-12-21

申请人： Thomas Anthony ,  Henryk Birecki

发明人： Thomas Anthony ,  Henryk Birecki

IPC分类号： B41J2/015 ,  B05D5/00 ,  C09D123/20 ,  C09D123/00 ,  C09D133/08

CPC分类号： C09D11/36 ,  C09D11/322

摘要： The present disclosure is drawn to an oil-based ink jet ink comprising a non-aqueous, oil-based liquid vehicle having a conductivity of less than less than 50 pS/cm; from 3 wt % to 12 wt % of a pigment; from 0.5 wt % to 6 wt % of a dispersant; and from 0.001 wt % to 0.5 wt % of a high molecular weight polymer that is partially or fully solubilized in the liquid vehicle, and having a weight average molecular weight from 50,000 to 5,000,000 Mw.

摘要翻译： 本公开内容涉及一种油性喷墨油墨，其包含导电率小于50pS / cm的非水性油基液体载体; 3重量％至12重量％的颜料; 0.5重量％至6重量％的分散剂; 和0.001重量％至0.5重量％的部分或完全溶解在液体载体中的高分子量聚合物，并且具有50,000至5,000,000MW的重均分子量。

公开(公告)号：US07163551B2

公开(公告)日：2007-01-16

申请号：US10486067

申请日：2002-08-08

申请人： Thomas Anthony ,  Christy Cummins ,  Paul Hooi

发明人： Thomas Anthony ,  Christy Cummins ,  Paul Hooi

IPC分类号： A61B17/04

CPC分类号： A61B17/0057 ,  A61B5/150022 ,  A61B5/15107 ,  A61B5/15128 ,  A61B17/0684 ,  A61B17/10 ,  A61B2017/00668 ,  A61B2090/062

摘要： A surgical stapling device is provided having a shaft, a surgical staple slidable longitudinally within the shaft, and a staple-firing mechanism for driving the staple towards the forward end of the housing, bending the staple to bring the free ends of the legs towards one another to close the staple, and releasing the closed staple. The device also includes a blood locator tube slidable longitudinally within the shaft between an initial extended position wherein a forward end of the tube projects beyond the forward end of the shaft to enter a puncture site in a liquid-carrying vessel in a human or animal, thereby to locate the forward end of the shaft at the puncture site, and a retracted position wherein the tube is retracted into the housing in coordination with the closure of the staple. The tube has a longitudinal slot extending rearwardly from its forward end and the back of the staple is accommodated transversely in the slot.

摘要翻译： 提供了一种外科缝合装置，其具有轴，可在轴内纵向滑动的外科用缝合钉，以及用于将钉向着壳体的前端驱动的订书钉机构，弯曲钉以将腿的自由端朝向一个 另一个关闭订书钉，并释放封闭的主题。 该装置还包括一个血液定位管，该血管定位管在轴之间纵向滑动，在初始伸展位置之间，其中管的前端突出超过轴的前端，以进入人或动物的液体携带容器中的穿刺部位， 从而将轴的前端定位在穿刺位置处，以及缩回位置，其中管与订书钉的封闭件协调地缩回​​到壳体中。 管具有从其前端向后延伸的纵向狭槽，并且钉的背面横向容纳在狭槽中。

公开(公告)号：US20050111254A1

公开(公告)日：2005-05-26

申请号：US11021268

申请日：2004-12-23

申请人： Thomas Anthony ,  Darrel Bloomquist ,  Manoj Bhattacharyya ,  Judy Bloomquist

发明人： Thomas Anthony ,  Darrel Bloomquist ,  Manoj Bhattacharyya ,  Judy Bloomquist

IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00

CPC分类号： G11C11/15

摘要： In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells.

公开(公告)号：US20050094456A1

公开(公告)日：2005-05-05

申请号：US10698501

申请日：2003-10-31

申请人： Heon Lee ,  Thomas Anthony ,  Manish Sharma

发明人： Heon Lee ,  Thomas Anthony ,  Manish Sharma

IPC分类号： H01L27/105 ,  G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/00 ,  H01L43/08

CPC分类号： H01L27/222 ,  G11C11/16 ,  G11C11/1675

摘要： A method for making magnetic random access memories (MRAM) which reduces heat conduction from memory cells in an MRAM array. The method uses grid of bit and word lines for selectively accessing data in the array of magnetic memory cells. The grid has a plurality of thermally and electrically resistive portions which provide connections to the magnetic memory cells. The resistive portions increase the thermal resistance for heat generated by each memory cell and during operation provide localized heating of active memory cells to ease cell state switching.

摘要翻译： 一种用于制造磁性随机存取存储器（MRAM）的方法，其减少MRAM阵列中的存储器单元的热传导。 该方法使用位和字线的网格来选择性地访问磁存储单元阵列中的数据。 栅极具有多个电阻和电阻部分，其提供到磁存储器单元的连接。 电阻部分增加了由每个存储单元产生的热的热阻，并且在操作期间提供有源存储器单元的局部加热以便于单元状态切换。