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129 条记录 (耗时 0.039 秒)

    MRAM device and integration techniques compatible with logic integration
    51.
    发明授权
    MRAM device and integration techniques compatible with logic integration 有权

    公开(公告)号：US08674465B2

    公开(公告)日：2014-03-18

    申请号：US12850860

    申请日：2010-08-05

    申请人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang

    发明人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    摘要： A semiconductor device includes a magnetic tunnel junction (MTJ) storage element configured to be disposed in a common interlayer metal dielectric (IMD) layer with a logic element. Cap layers separate the common IMD layer from a top and bottom IMD layer. Top and bottom electrodes are coupled to the MTJ storage element. Metal connections to the electrodes are formed in the top and bottom IMD layers respectively through vias in the separating cap layers. Alternatively, the separating cap layers are recessed and the bottom electrodes are embedded, such that direct contact to metal connections in the bottom IMD layer is established. Metal connections to the top electrode in the common IMD layer are enabled by isolating the metal connections from the MTJ storage elements with metal islands and isolating caps.

    Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
    53.
    发明授权
    Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same 有权
    磁隧道结（MTJ）和方法以及采用磁路随机存取存储器（MRAM）的方法

    公开(公告)号：US08344433B2

    公开(公告)日：2013-01-01

    申请号：US12423298

    申请日：2009-04-14

    申请人： Xiaochun Zhu ,  Matthew Nowak ,  Xia Li ,  Seung H. Kang

    发明人： Xiaochun Zhu ,  Matthew Nowak ,  Xia Li ,  Seung H. Kang

    IPC分类号： H01L29/82 ,  H01L21/00

    CPC分类号： H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3272 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： Magnetic tunnel junctions (MTJs) and methods of forming same are disclosed. A pinned layer is disposed in the MTJ such that a free layer of the MTJ can couple to a drain of an access transistor when provided in a magnetic random access memory (MRAM) bitcell. This structure alters the write current flow direction to align the write current characteristics of the MTJ with write current supply capability of an MRAM bitcell employing the MTJ. As a result, more write current can be provided to switch the MTJ from a parallel (P) to anti-parallel (AP) state. An anti-ferromagnetic material (AFM) layer is provided on the pinned layer to fix pinned layer magnetization. To provide enough area for depositing the AFM layer to secure pinned layer magnetization, a pinned layer having a pinned layer surface area greater than a free layer surface area of the free layer is provided.

    摘要翻译： 公开了磁隧道结（MTJ）及其形成方法。 被钉扎层设置在MTJ中，使得当提供在磁性随机存取存储器（MRAM）位单元中时，MTJ的自由层可以耦合到存取晶体管的漏极。 该结构改变写入电流流动方向，以使MTJ的写入电流特性与使用MTJ的MRAM位单元的写入电流供应能力对准。 结果，可以提供更多的写入电流以将MTJ从并行（P）切换到反并行（AP）状态。 在钉扎层上提供反铁磁材料（AFM）层以固定钉扎层的磁化强度。 为了提供足够的用于沉积AFM层以确保钉扎层磁化的区域，提供了具有大于自由层的自由层表面积的钉扎层表面积的钉扎层。

    MRAM Device and Integration Techniques Compatible with Logic Integration
    54.
    发明申请
    MRAM Device and Integration Techniques Compatible with Logic Integration 有权
    与逻辑集成兼容的MRAM器件和集成技术

    公开(公告)号：US20120032287A1

    公开(公告)日：2012-02-09

    申请号：US12850860

    申请日：2010-08-05

    申请人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang

    发明人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang

    IPC分类号： H01L27/115 ,  H01L21/8246

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    摘要： A semiconductor device includes a magnetic tunnel junction (MTJ) storage element configured to be disposed in a common interlayer metal dielectric (IMD) layer with a logic element. Cap layers separate the common IMD layer from a top and bottom IMD layer. Top and bottom electrodes are coupled to the MTJ storage element. Metal connections to the electrodes are formed in the top and bottom IMD layers respectively through vias in the separating cap layers. Alternatively, the separating cap layers are recessed and the bottom electrodes are embedded, such that direct contact to metal connections in the bottom IMD layer is established. Metal connections to the top electrode in the common IMD layer are enabled by isolating the metal connections from the MTJ storage elements with metal islands and isolating caps.

    摘要翻译： 半导体器件包括被配置为设置在具有逻辑元件的公共层间金属电介质（IMD）层中的磁隧道结（MTJ）存储元件。 盖层将公共IMD层与顶部和底部IMD层分开。 顶部和底部电极耦合到MTJ存储元件。 金属与电极的连接分别通过分离盖层中的通孔形成在顶部和底部IMD层中。 或者，分离盖层是凹进的并且底部电极被嵌入，从而建立与底部IMD层中的金属连接的直接接触。 通过用金属岛和隔离帽隔离与MTJ存储元件的金属连接来实现与公共IMD层中顶部电极的金属连接。

    Magnetic Storage Element Utilizing Improved Pinned Layer Stack
    55.
    发明申请
    Magnetic Storage Element Utilizing Improved Pinned Layer Stack 有权
    磁存储元件利用改进的固定层堆栈

    公开(公告)号：US20120012952A1

    公开(公告)日：2012-01-19

    申请号：US12837535

    申请日：2010-07-16

    申请人： Wei-Chuan Chen ,  Seung H. Kang ,  Xiaochun Zhu ,  Xia Li

    发明人： Wei-Chuan Chen ,  Seung H. Kang ,  Xiaochun Zhu ,  Xia Li

    IPC分类号： H01L29/82 ,  H01L21/02

    CPC分类号： H01L43/08

    摘要： A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer.

    摘要翻译： 磁性隧道结（MTJ）存储元件可以包括钉扎层堆叠和第一功能层。 钉扎层堆叠由包括底部钉扎层，耦合层和顶部钉扎层的多个层形成。 第一功能层设置在底部钉扎层或顶部钉扎层中。

    System and method to fabricate magnetic random access memory
    57.
    发明授权
    System and method to fabricate magnetic random access memory 有权
    制造磁性随机存取存储器的系统和方法

    公开(公告)号：US07817463B2

    公开(公告)日：2010-10-19

    申请号：US12164272

    申请日：2008-06-30

    申请人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang

    发明人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang

    IPC分类号： G11C7/00

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F41/307 ,  H01L43/12

    摘要： A system and method to fabricate magnetic random access memory is disclosed. In a particular embodiment, a method of aligning a magnetic film during deposition is disclosed. The method includes applying a first magnetic field along a first direction in a region in which a substrate resides during a deposition of a first magnetic material onto the substrate. The method further includes applying a second magnetic field along a second direction in the region during the deposition of the first magnetic material onto the substrate.

    摘要翻译： 公开了制造磁随机存取存储器的系统和方法。 在特定实施例中，公开了一种在沉积期间对准磁性膜的方法。 该方法包括在将第一磁性材料沉积到衬底上时沿着第一方向施加第一磁场，该第一磁场在衬底驻留的区域中。 该方法还包括在将第一磁性材料沉积到衬底上的同时沿该区域中的第二方向施加第二磁场。

    Magnetic Random Access Memory
    58.
    发明申请
    Magnetic Random Access Memory 有权
    磁性随机存取存储器

    公开(公告)号：US20100207221A1

    公开(公告)日：2010-08-19

    申请号：US12769353

    申请日：2010-04-28

    申请人： Xia Li ,  Seung H. Kang ,  Xiaochun Zhu

    发明人： Xia Li ,  Seung H. Kang ,  Xiaochun Zhu

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  G11C11/16 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/312 ,  H01L21/31612 ,  H01L21/6715 ,  H01L27/222

    摘要： A device includes a magnetic tunnel junction (MTJ) structure and a cap layer in contact with the MTJ structure. The device also includes a spin-on material layer in contact with a sidewall portion of the cap layer and a conducting layer in contact with at least the spin-on material layer and a portion of the MTJ structure. The cap layer has been etched to expose a portion of an electrode contact layer of the MTJ structure. The conducting layer is in electrical contact with the exposed portion of the electrode contact layer of the MTJ structure.

    摘要翻译： 一种装置包括磁隧道结（MTJ）结构和与MTJ结构接触的盖层。 该装置还包括与盖层的侧壁部分接触的旋涂材料层和与至少旋涂材料层和MTJ结构的一部分接触的导电层。 已经蚀刻了盖层以暴露MTJ结构的电极接触层的一部分。 导电层与MTJ结构的电极接触层的暴露部分电接触。