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104 条记录 (耗时 0.057 秒)

    Chemical mechanical polishing endpoint process control
    51.
    发明授权
    Chemical mechanical polishing endpoint process control 失效
    化学机械抛光终点过程控制

    公开(公告)号：US5659492A

    公开(公告)日：1997-08-19

    申请号：US620721

    申请日：1996-03-19

    申请人： Leping Li ,  Steven George Barbee ,  Arnold Halperin

    发明人： Leping Li ,  Steven George Barbee ,  Arnold Halperin

    IPC分类号： B24B37/013 ,  B24B49/03 ,  H01L21/66 ,  B24B49/16

    CPC分类号： B24B37/013 ,  B24B49/03 ,  H01L22/26

    摘要： A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.

    摘要翻译： 提供了一种用于确定化学机械抛光晶片上的薄膜的终点的方法和装置。 首先，确定指示膜的突破何时发生的参考点抛光时间，然后确定指示参考点研磨时间与膜完全抛光之间的间隔的过度抛光时间。 为了得到终点的总抛光时间，添加了参考点抛光时间和过度抛光时间。

    Contactless real-time in-situ monitoring of a chemical etching
    53.
    发明授权
    Contactless real-time in-situ monitoring of a chemical etching 失效
    非接触式实时化学蚀刻实时监测

    公开(公告)号：US5516399A

    公开(公告)日：1996-05-14

    申请号：US269863

    申请日：1994-06-30

    申请人： Michael J. Balconi-Lamica ,  Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin Wai-chow Wong

    发明人： Michael J. Balconi-Lamica ,  Steven G. Barbee ,  Tony F. Heinz ,  Yiping Hsiao ,  Leping Li ,  Eugene H. Ratzlaff ,  Justin Wai-chow Wong

    IPC分类号： G01N27/02 ,  H01L21/306 ,  H01L21/66 ,  H01L21/00

    CPC分类号： B24B37/013 ,  H01L22/26 ,  H01L2924/0002

    摘要： A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process for the etching of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing at least two conductive electrodes in the wet chemical bath, wherein the at least two electrodes are proximate to but not in contact with the at least one wafer, and further wherein said two electrodes are positioned on the same side of the wafer; and monitoring an electrical characteristic between the at least two electrodes, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process. Such a method and apparatus are particularly useful in a wet chemical etch station.

    摘要翻译： 公开了一种用于在湿化学蚀刻剂浴中蚀刻至少一个晶片的化学蚀刻工艺的实时原位监测的非接触式方法和装置。 该方法包括以下步骤：在湿化学浴中提供至少两个导电电极，其中所述至少两个电极接近但不与所述至少一个晶片接触，并且其中所述两个电极位于同一侧 的晶片; 以及监测所述至少两个电极之间的电特性，其中所述电特性的规定变化指示所述蚀刻工艺的规定条件。 这种方法和装置在湿化学蚀刻站中特别有用。