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    BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL
    51.
    发明申请
    BOLOMETER STRUCTURE, INFRARED DETECTION PIXEL EMPLOYING BOLOMETER STRUCTURE, AND METHOD OF FABRICATING INFRARED DETECTION PIXEL 审中-公开
    透镜结构，使用红外线检测像素的BOLOMETER结构，以及制作红外检测像素的方法

    公开(公告)号：US20100148067A1

    公开(公告)日：2010-06-17

    申请号：US12507372

    申请日：2009-07-22

    申请人： Sang Hoon CHEON ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Hoon CHEON ,  Ho Jun Ryu ,  Woo Seok Yang ,  Seong Mok Cho ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01J5/00 ,  C23F1/00

    CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/022 ,  G01J5/024

    摘要： Provided are a bolometer structure, an infrared detection pixel employing the bolometer structure, and a method of fabricating the infrared detection pixel.The infrared detection pixel includes a substrate including a read-out integrated circuit (ROIC) and on which a reflection layer for reflecting infrared light is stacked, a bolometer structure formed to be spaced apart from the substrate and including a temperature-sensitive resistive layer, a first metal layer formed in a pattern on one surface of the temperature-sensitive resistive layer, a second metal layer formed in a pattern complementary to the pattern of the first metal layer on the other surface of the temperature-sensitive resistive layer in order to complementarily absorb infrared light, and an insulating layer formed between the temperature-sensitive resistive layer and the first metal layer, and a metal pad receiving a change in resistance of the temperature-sensitive resistive layer according to infrared light absorbed by the first metal layer and the second metal layer from the second metal layer, and transferring the change in resistance to the ROIC.Thus, it is possible to improve responsivity, and implement a simple bolometer structure robust against stress. Consequently, process yield can be improved, and the volume, weight, price, etc., of application products can be reduced by reducing the volume of a bolometer structure.

    摘要翻译： 提供了一种测辐射热计结构，采用测辐射热计结构的红外检测像素，以及制造红外检测像素的方法。 红外线检测像素包括：基板，包括读出集成电路（ROIC），层叠用于反射红外光的反射层，形成为与基板间隔开并包括温度敏感电阻层的测辐射热计结构， 在温度敏感电阻层的一个表面上以图案形成的第一金属层，第二金属层，以与第一金属层的图案互补的图案形成在第一金属层的图案上，以在该温度敏感电阻层的另一个表面上，以便 互补吸收红外光，以及形成在所述耐温电阻层和所述第一金属层之间的绝缘层，以及金属焊盘，所述金属焊盘根据由所述第一金属层吸收的红外光接收所述耐温电阻层的电阻变化，以及 来自第二金属层的第二金属层，并且传递对ROIC的电阻变化。 因此，可以提高响应度，并且实现对应力的鲁棒的简单的测辐射热计结构。 因此，可以提高工艺产量，并且可以通过减小测辐射热计结构的体积来减少应用产品的体积，重量，价格等。

    HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME
    52.
    发明申请
    HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME 失效
    高灵敏度Z轴振动传感器及其制造方法

    公开(公告)号：US20100132467A1

    公开(公告)日：2010-06-03

    申请号：US12509360

    申请日：2009-07-24

    申请人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

    发明人： Sang Choon Ko ,  Chi Hoon Jun ,  Byoung Gon Yu ,  Chang Auck Choi

    IPC分类号： G01P15/125 ,  H01L21/306

    CPC分类号： G01P15/0802 ,  G01H11/06 ,  G01P1/023 ,  G01P15/125 ,  H04R19/005

    摘要： Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.

    摘要翻译： 提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为 掺杂多晶硅层由于z轴振动而移动。 特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱 频率如地震波。 因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波 和低振动速度。 此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。