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    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
    相变存储器件及其制造方法

    公开(公告)号：US20090184307A1

    公开(公告)日：2009-07-23

    申请号：US12240013

    申请日：2008-09-29

    申请人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    发明人： Sung Min YOON ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    IPC分类号： H01L21/06 ,  H01L45/00

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

    摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12 <= x <= 0.32）形成，从而确定晶体状态 作为稳定的单相，不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变随着温度的升高直接转变为单稳态 非晶态。 结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位 可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。

    Phase change memory device and method of fabricating the same
    6.
    发明授权
    Phase change memory device and method of fabricating the same 有权
    相变存储器件及其制造方法

    公开(公告)号：US07977674B2

    公开(公告)日：2011-07-12

    申请号：US12240013

    申请日：2008-09-29

    申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Seung Yun Lee ,  Young Sam Park ,  Kyu Jeong Choi ,  Nam Yeal Lee

    IPC分类号： H01L29/08 ,  H01L29/18 ,  H01L29/02 ,  H01L47/00 ,  H01L21/06

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

    摘要： A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12≦x≦0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

    摘要翻译： 提供了一种相变存储器件及其制造方法。 相变存储器件的相变材料层由锗（Ge） - 锑（Sb） - 碲（Te）基Ge2Sb2 + xTe5（0.12＆nlE; x＆lt; lE; 0.32）形成，结晶状态被确定为 稳定的单相，而不是相变材料的晶态和非晶态之间的相转变中的亚稳相和稳定相的混合相，并且根据升温的相变，从非晶形态到单稳态相转变 州。 结果，可以显着提高相变存储器件的设定状态电阻的设定操作稳定性和分布特性，并且可以在高温下（即，结晶温度附近）长时间保持非晶形电阻，并因此复位 可以显着提高相变存储器件的操作稳定性和重写操作的稳定性。