公开(公告)号：US08488375B2

公开(公告)日：2013-07-16

申请号：US13037592

申请日：2011-03-01

申请人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Shigeki Takahashi

发明人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Shigeki Takahashi

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228

摘要： According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.

摘要翻译： 根据一个实施例，磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。 第一堆叠单元包括第一铁磁层，第二铁磁层和第一非磁性层。 第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。 第二堆叠单元包括第三铁磁层，第四铁磁层和第二非磁性层。 第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。 第一方向与第二方向相反。

公开(公告)号：US07355824B2

公开(公告)日：2008-04-08

申请号：US10976840

申请日：2004-11-01

申请人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

发明人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

IPC分类号： G11B5/39 ,  G11C11/00

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1114

摘要： The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy. A peak-to-peak maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.

摘要翻译： 磁阻效应元件本发明涉及磁阻效应元件，其具有大的MR比，即使其尺寸减小也具有良好的热稳定性和小的开关磁场;以及使用磁阻效应元件的磁存储器。 磁阻效应元件包括：通过非磁性层堆叠多个铁磁层而形成的存储层; 具有至少一个铁磁层的磁性膜; 以及设置在所述存储层和所述磁性膜之间的隧道势垒层。 存储层的每个铁磁层由Ni-Fe-Co三元合金形成。 存储层和隧道势垒层之间的界面上的峰 - 峰最大表面粗糙度以及磁性膜和隧道势垒层之间的界面为0.4nm以下。

公开(公告)号：US08058080B2

公开(公告)日：2011-11-15

申请号：US12699721

申请日：2010-02-03

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Minoru Amano ,  Shigeki Takahashi ,  Masayoshi Iwayama ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Minoru Amano ,  Shigeki Takahashi ,  Masayoshi Iwayama ,  Kuniaki Sugiura

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/228

摘要： A magnetic material of a magnetoresistive element is formed on a lower electrode. An upper electrode is formed on the magnetic material. A resist for nano-imprint lithography is formed on the upper electrode. A first pattern or a second pattern is formed in the resist by setting a first template or a second template into contact with the resist and curing the resist. The first template has the first pattern that corresponds to the magnetoresistive element and the lower electrode. The second template has the second pattern that corresponds to the magnetoresistive element and the upper electrode. The magnetic material and the lower electrode are patterned at the same time by using the resist having the first pattern, or the magnetic material and the upper electrode are patterned at the same time by using the resist having the second pattern.

摘要翻译： 磁阻元件的磁性材料形成在下电极上。 在磁性材料上形成上部电极。 在上电极上形成用于纳米压印光刻的抗蚀剂。 通过将第一模板或第二模板与抗蚀剂接触并固化抗蚀剂，在抗蚀剂中形成第一图案或第二图案。 第一模板具有对应于磁阻元件和下电极的第一图案。 第二模板具有对应于磁阻元件和上电极的第二图案。 通过使用具有第一图案的抗蚀剂，同时对磁性材料和下部电极进行图案化，或者通过使用具有第二图案的抗蚀剂同时对磁性材料和上部电极进行图案化。

公开(公告)号：US08710605B2

公开(公告)日：2014-04-29

申请号：US13231894

申请日：2011-09-13

申请人： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

发明人： Shigeki Takahashi ,  Yuichi Ohsawa ,  Junichi Ito ,  Chikayoshi Kamata ,  Saori Kashiwada ,  Minoru Amano ,  Hiroaki Yoda

IPC分类号： H01L29/72

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.

摘要翻译： 根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。 磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。 所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。 第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

公开(公告)号：US07359163B2

公开(公告)日：2008-04-15

申请号：US10884946

申请日：2004-07-07

申请人： Minoru Amano ,  Yoshiaki Saito

发明人： Minoru Amano ,  Yoshiaki Saito

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/15 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/228

摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.

摘要翻译： 一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。 将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。 一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。 第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。 隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

公开(公告)号：US20100102407A1

公开(公告)日：2010-04-29

申请号：US12556389

申请日：2009-09-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

公开(公告)号：US20100097846A1

公开(公告)日：2010-04-22

申请号：US12563465

申请日：2009-09-21

申请人： Kuniaki Sugiura ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano

发明人： Kuniaki Sugiura ,  Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano

IPC分类号： G11C11/02 ,  H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/12

摘要： A magnetic memory includes an interlayer insulation layer provided on a substrate, a conductive underlying layer provided on the interlayer insulation layer, and a magnetoresistive element provided on the underlying layer and including two magnetic layers and a nonmagnetic layer interposed between the magnetic layers. The underlying layer has an etching rate lower than an etching rate of each of the magnetic layers.

摘要翻译： 磁存储器包括设置在基板上的层间绝缘层，设置在层间绝缘层上的导电性底层，以及设置在下层上的磁阻元件，并且包括两个磁性层和介于该磁性层之间的非磁性层。 下层具有比每个磁性层的蚀刻速率低的蚀刻速率。

公开(公告)号：US08531875B2

公开(公告)日：2013-09-10

申请号：US13426139

申请日：2012-03-21

申请人： Satoshi Yanagi ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Jyunichi Ozeki ,  Hisanori Aikawa ,  Naoharu Shimomura ,  Masatoshi Yoshikawa ,  Minoru Amano ,  Shigeki Takahashi ,  Hiroaki Yoda

发明人： Satoshi Yanagi ,  Eiji Kitagawa ,  Masahiko Nakayama ,  Jyunichi Ozeki ,  Hisanori Aikawa ,  Naoharu Shimomura ,  Masatoshi Yoshikawa ,  Minoru Amano ,  Shigeki Takahashi ,  Hiroaki Yoda

IPC分类号： H01L29/82 ,  G11C11/15

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08

摘要： According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.

摘要翻译： 根据一个实施例，磁存储器包括至少一个包括磁阻元件的存储单元以及第一和第二电极。 元件包括第一磁性层，隧道势垒层，第二磁性层和设置在第二磁性层上并且具有与第二磁性层的磁化方向反平行的磁化的第三磁性层。 第一磁性层的上表面的直径小于隧道势垒层的下表面的直径。 第二磁性层的下表面的直径不大于隧道势垒层的上表面的直径。

公开(公告)号：US08081505B2

公开(公告)日：2011-12-20

申请号：US12556389

申请日：2009-09-09

申请人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

发明人： Takeshi Kajiyama ,  Yoshiaki Asao ,  Shigeki Takahashi ,  Minoru Amano ,  Kuniaki Sugiura

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.

摘要翻译： 磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜 层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。 第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

公开(公告)号：US06826078B2

公开(公告)日：2004-11-30

申请号：US10395073

申请日：2003-03-25

申请人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

发明人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

IPC分类号： G11C1100

CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1114

摘要： There are provided a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy which has a composition selected from one of a composition region surrounded by a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %), a straight line of Fe80(at %)Ni20(at %)—Fe30(at %)Ni70(at %) and a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), and a composition region surrounded by a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), a straight line of Co90(at %)Fe10(at %)—Fe70(at %)Ni30(at %) and a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %). A maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.

摘要翻译： 提供了磁阻效应元件，即使其尺寸减小，也具有大的MR比，优异的热稳定性和小的开关磁场，以及使用磁阻效应元件的磁存储器。 磁阻效应元件包括：通过非磁性层堆叠多个铁磁层而形成的存储层; 具有至少一个铁磁层的磁性膜; 以及设置在所述存储层和所述磁性膜之间的隧道势垒层。 存储层的每个铁磁层由Ni-Fe-Co三元合金形成，该Ni-Fe-Co三元合金具有选自由Co90直线（原子％）Fe 10（原子％）-Fe 30（at％）包围的组成区域之一的组成 at％）Ni80（at％），直线Fe80（at％）Ni20（at％）-Fe30（at％）Ni70（at％）和直线Fe80（at％）Ni20（at％） - Co65（at％）Ni35（at％），由Fe80（原子％）Ni20（原子％）的直线包围的组成区域，Co65（原子％）Ni35（原子％），Co90的直线 ％）Fe10（at％）-Fe70（at％）Ni30（at％）和Co90（at％）Fe10（at％）-Fe30（at％）Ni70（at％）的直线。 存储层和隧道势垒层之间的界面上的最大表面粗糙度以及磁性膜和隧道势垒层之间的界面的最大表面粗糙度为0.4nm以下。