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    Magnetoresistive effect element and magnetic memory having the same
    1.
    发明授权
    Magnetoresistive effect element and magnetic memory having the same 有权
    磁阻效应元件和具有相同的磁存储器

    公开(公告)号：US07355824B2

    公开(公告)日：2008-04-08

    申请号：US10976840

    申请日：2004-11-01

    申请人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

    发明人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

    IPC分类号： G11B5/39 ,  G11C11/00

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1114

    摘要： The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy. A peak-to-peak maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.

    摘要翻译： 磁阻效应元件本发明涉及磁阻效应元件，其具有大的MR比，即使其尺寸减小也具有良好的热稳定性和小的开关磁场;以及使用磁阻效应元件的磁存储器。 磁阻效应元件包括：通过非磁性层堆叠多个铁磁层而形成的存储层; 具有至少一个铁磁层的磁性膜; 以及设置在所述存储层和所述磁性膜之间的隧道势垒层。 存储层的每个铁磁层由Ni-Fe-Co三元合金形成。 存储层和隧道势垒层之间的界面上的峰 - 峰最大表面粗糙度以及磁性膜和隧道势垒层之间的界面为0.4nm以下。

    Magnetic memory
    2.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06717845B2

    公开(公告)日：2004-04-06

    申请号：US10345253

    申请日：2003-01-16

    申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    IPC分类号： G11C1115

    CPC分类号： G11C11/16

    摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

    摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。

    Magnetic memory
    4.
    发明授权
    Magnetic memory 失效

    公开(公告)号：US06831857B2

    公开(公告)日：2004-12-14

    申请号：US10329417

    申请日：2002-12-27

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    IPC分类号： G11C1115

    CPC分类号： G11C11/15

    摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

    Magnetic memory
    6.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06831855B2

    公开(公告)日：2004-12-14

    申请号：US10345188

    申请日：2003-01-16

    申请人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

    发明人： Tatsuya Kishi ,  Minoru Amano ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Yoshihisa Iwata

    IPC分类号： G11C1100

    CPC分类号： G11C11/16

    摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

    摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在磁阻效应元件上或其下方沿第一方向延伸的第一写入布线，布线的轴向横截面的重心与重心处的厚度中心分开，并且重心偏向 磁阻效应元件; 以及写入电路，其被配置为使电流通过所述第一写入布线，以便通过所述电流产生的磁场将信息记录在所述磁记录层中。

    Magnetoresistive effect element and magnetic memory having the same
    7.
    发明授权
    Magnetoresistive effect element and magnetic memory having the same 有权
    磁阻效应元件和具有相同的磁存储器

    公开(公告)号：US06826078B2

    公开(公告)日：2004-11-30

    申请号：US10395073

    申请日：2003-03-25

    申请人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

    发明人： Katsuya Nishiyama ,  Yoshiaki Saito ,  Minoru Amano

    IPC分类号： G11C1100

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3272 ,  H01L27/224 ,  H01L27/228 ,  Y10T428/1114

    摘要： There are provided a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy which has a composition selected from one of a composition region surrounded by a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %), a straight line of Fe80(at %)Ni20(at %)—Fe30(at %)Ni70(at %) and a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), and a composition region surrounded by a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), a straight line of Co90(at %)Fe10(at %)—Fe70(at %)Ni30(at %) and a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %). A maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.

    摘要翻译： 提供了磁阻效应元件，即使其尺寸减小，也具有大的MR比，优异的热稳定性和小的开关磁场，以及使用磁阻效应元件的磁存储器。 磁阻效应元件包括：通过非磁性层堆叠多个铁磁层而形成的存储层; 具有至少一个铁磁层的磁性膜; 以及设置在所述存储层和所述磁性膜之间的隧道势垒层。 存储层的每个铁磁层由Ni-Fe-Co三元合金形成，该Ni-Fe-Co三元合金具有选自由Co90直线（原子％）Fe 10（原子％）-Fe 30（at％）包围的组成区域之一的组成 at％）Ni80（at％），直线Fe80（at％）Ni20（at％）-Fe30（at％）Ni70（at％）和直线Fe80（at％）Ni20（at％） - Co65（at％）Ni35（at％），由Fe80（原子％）Ni20（原子％）的直线包围的组成区域，Co65（原子％）Ni35（原子％），Co90的直线 ％）Fe10（at％）-Fe70（at％）Ni30（at％）和Co90（at％）Fe10（at％）-Fe30（at％）Ni70（at％）的直线。 存储层和隧道势垒层之间的界面上的最大表面粗糙度以及磁性膜和隧道势垒层之间的界面的最大表面粗糙度为0.4nm以下。

    Magnetic memory
    8.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US06807094B2

    公开(公告)日：2004-10-19

    申请号：US10769757

    申请日：2004-02-03

    申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

    IPC分类号： G11C1115

    CPC分类号： G11C11/16

    摘要： A magnetic memory includes a magnetoresistance effect element having a magnetic recording layer, a first wiring extending in a first direction on or below the magnetoresistance effect element, a covering layer provided on at least both sides of the first wiring, and a writing circuit configured to pass a current through the first wiring in order to record information in the magnetic recording layer by a magnetic field generated by the current. The covering layer is made of magnetic material and has a uniaxial anisotropy in the first direction, along which a magnetization of the covering layer occurs.

    摘要翻译： 磁存储器包括具有磁记录层的磁阻效应元件，在磁阻效应元件上或其下方沿第一方向延伸的第一布线，设置在第一布线的至少两侧的覆盖层，以及写入电路， 通过第一布线传递电流，以便通过电流产生的磁场将信息记录在磁记录层中。 覆盖层由磁性材料制成，并且在第一方向上具有单轴各向异性，沿着该方向发生覆盖层的磁化。

    Magnetic memory
    9.
    发明授权
    Magnetic memory 失效
    磁记忆

    公开(公告)号：US06934184B2

    公开(公告)日：2005-08-23

    申请号：US10893915

    申请日：2004-07-20

    申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

    IPC分类号： H01L27/105 ,  G11C11/15 ,  H01L21/8246 ,  H01L43/08

    CPC分类号： G11C11/15

    摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

    摘要翻译： 在用于存储单元的磁阻效应元件的存储层中，高度可靠的磁存储器在高存储密度下表现出增强的数据保持稳定性。 磁存储器包括具有第一布线的存储单元阵列，与第一布线相交的第二布线和各自设置在相应的第一布线和第二布线的交叉区域的存储单元。 当选择对应的第一和第二布线时，选择每个存储单元。 每个存储单元包括磁阻效应元件，其具有存储层，其中当电流流过所选择的第一和第二布线时，通过产生的磁场来存储数据;第一磁性构件，具有设置为部分地包围每个第一布线的两端， 端部位于容易的磁化轴的方向上，以形成具有存储层的闭环磁路，以及具有两端的第二磁性构件，其设置为部分地包围每个第二布线，并且两端位于 磁化强度轴的方向，放大沿着硬磁化轴的方向施加到存储层的磁场。 第一磁性构件的每个端部被定位成比第二磁性构件的每个端部更靠近存储层。