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公开(公告)号：US20060219660A1
公开(公告)日：2006-10-05
申请号：US11393915
申请日：2006-03-31
申请人： Eiichi Nishimura , Takehiko Orii
发明人： Eiichi Nishimura , Takehiko Orii
IPC分类号： C23F1/00 , H01L21/461 , H01L21/302 , C03C15/00
CPC分类号： H01L21/31133 , H01L21/31111 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/6708 , H01L21/76802
摘要： A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by applying another plasma which is different from the plasma used in the above etching process. The method further includes the process of removing the modified remaining film of the insulation film with a liquid chemical. The process of removing the modified remaining film can be also achieved by a dry etching method not employing a plasma.
摘要翻译： 通过图案化掩模蚀刻绝缘膜的方法包括以下步骤：在通过施加等离子体即将露出底层之前蚀刻绝缘膜，并通过施加另一种来改变绝缘膜的剩余膜的质量 与上述蚀刻工艺中使用的等离子体不同的等离子体。 该方法还包括用液体化学品去除绝缘膜的改性剩余膜的方法。 通过不使用等离子体的干式蚀刻方法也可以实现除去改性后的膜的工序。
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公开(公告)号：US20120264308A1
公开(公告)日：2012-10-18
申请号：US13443156
申请日：2012-04-10
IPC分类号： H01L21/306 , B05B1/00 , B05C9/00
CPC分类号： H01L21/3105 , H01L21/02164 , H01L21/02359 , H01L21/31111 , H01L21/6708
摘要： Disclosed is a technique for attaining high etching selectivity of a silicon nitride film to a silicon oxide film. The etching method includes a step of supplying a silylating agent to a substrate having a silicon nitride film and a silicon oxide film exposed on the surface thereof to thereby form a silylated film as a protective film over the surface of the silicon oxide film. After this step, an etching solution is supplied to the substrate. It is thus possible to selectively etch only the silicon nitride film.
摘要翻译： 公开了一种获得氮化硅膜对氧化硅膜的高蚀刻选择性的技术。 蚀刻方法包括向在其表面上暴露的氮化硅膜和氧化硅膜的基板供给甲硅烷化剂的步骤，从而在氧化硅膜的表面上形成作为保护膜的甲硅烷基化膜。 在该步骤之后，向衬底提供蚀刻溶液。 因此，可以仅选择性地仅蚀刻氮化硅膜。
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53.发明申请公开(公告)号：US20110265718A1
公开(公告)日：2011-11-03
申请号：US13180702
申请日：2011-07-12
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。
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54.发明授权Substrate cleaning method, substrate cleaning apparatus and computer readable recording medium 有权基板清洗方法，基板清洗装置和计算机可读记录介质公开(公告)号：US07927429B2
公开(公告)日：2011-04-19
申请号：US10577314
申请日：2004-11-12
申请人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
发明人： Hiromitsu Nanba , Takashi Yabuta , Takehiko Orii
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B3/02 , G02F2001/1316 , G11B23/505 , H01L21/67034
摘要： After a rinse process on a wafer W is performed by feeding pure water to the surface of the wafer W at a predetermined flow rate while rotating the wafer W in an approximately horizontal state, a feed amount of the pure water to the wafer W is reduced, and a pure-water feed point is moved outward from the center of the wafer W. In this manner, the wafer W is subjected to a spin dry process while forming a liquid film in a substantially outer region of the pure-water feed point.
摘要翻译： 在通过在大致水平状态下旋转晶片W的同时以预定流量将纯水供给到晶片W的表面来进行晶片W的冲洗处理后，纯水对晶片W的供给量减少 ，并且纯水供给点从晶片W的中心向外移动。以这种方式，对晶片W进行旋转干燥处理，同时在纯水供给点的大致外部区域形成液膜 。
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55.发明申请公开(公告)号：US20090253258A1
公开(公告)日：2009-10-08
申请号：US12405644
申请日：2009-03-17
IPC分类号： H01L21/283 , B05B13/02
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译： 在基板的表面上形成具有均匀膜厚的镀膜。 半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。
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公开(公告)号：US20080210278A1
公开(公告)日：2008-09-04
申请号：US12149829
申请日：2008-05-08
申请人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
发明人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
IPC分类号： B08B3/00
CPC分类号： H01L21/6708 , B08B3/02
摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.
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公开(公告)号：US07332055B2
公开(公告)日：2008-02-19
申请号：US10209617
申请日：2002-08-01
申请人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
发明人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
CPC分类号： H01L21/6708 , B08B3/02
摘要： A substrate processing apparatus is provided. The apparatus includes a plurality of fluid suppliers 61, 61, 63 for supplying different processing fluids. In processing a wafer W, the substrate processing apparatus moves the fluid suppliers 61, 62, 63 along the peripheral part of the wafer W relatively. The fluid suppliers 61, 62, 63 are arranged in a direction extending from the circumference of the wafer W to its inside. With the arrangement, the apparatus is capable of stable processing of the wafer W in spite of rotating the wafer W at a low speed. Further, it is possible to improve a throughput of the apparatus in resist processing.
摘要翻译： 提供了一种基板处理装置。 该装置包括用于供应不同加工流体的多个流体供应器61,61,63。 在处理晶片W时，基板处理装置沿着晶片W的周边部分相对移动流体供给部61,62,63。 流体供应部61,62,63沿着从晶片W的圆周向内延伸的方向配置。 通过这种布置，尽管晶片W以低速旋转，该装置能够稳定地处理晶片W. 此外，可以提高抗蚀剂处理中的装置的生产量。
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公开(公告)号：US07300598B2
公开(公告)日：2007-11-27
申请号：US10812102
申请日：2004-03-30
申请人： Nobuo Konishi , Takayuki Toshima , Takehiko Orii
发明人： Nobuo Konishi , Takayuki Toshima , Takehiko Orii
CPC分类号： H01L21/6708 , B08B3/024 , H01L21/67051
摘要： The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.
摘要翻译： 本发明涉及一种包括在基材上的化学液体处理和漂洗液处理的方法，更具体地涉及一种在实现均匀的工艺并防止颗粒产生的同时减少化学液体的消耗的技术。 在具体实施例中，执行用于去除形成在硅晶片上的氧化硅膜的工艺。 该方法包括三个随后执行的步骤，其中（1）稀释的氢氟酸（DHF），（2）DHF和去离子水（DIW），（3）DIW分别供应到旋转的晶片上。 在亲水性氧化硅膜溶解之前立即进行从步骤（1）到步骤（2）的转变，以露出下面的疏水硅层。
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公开(公告)号：US07275553B2
公开(公告)日：2007-10-02
申请号：US10409615
申请日：2003-04-09
CPC分类号： H01L21/67051
摘要： A cleaning processing apparatus comprises a spin chuck for holding a wafer W, an under plate being positioned to face the back surface of the wafer W with a prescribed gap provided therebetween, a support member for supporting the under plate, and a nozzle hole formed to extended through the plate member and the support member. A chemical liquid, a pure water and a gas can be supplied into a nozzle hole through opening-closing valves, and the chemical liquid and the pure water remaining inside the nozzle hole can be sucked by a sucking device. A pure water remaining inside the nozzle hole is sucked and removed by using the sucking device after the processing of the wafer W with a pure water and, then, a gas is spurted onto the back surface of the wafer W.
摘要翻译： 一种清洁处理装置，包括用于保持晶片W的旋转卡盘，设置在与晶片W的背面对置的底板，其间设有规定的间隙，支撑底板的支撑部件和形成为 延伸穿过板构件和支撑构件。 可以通过开闭阀将化学液体，纯水和气体供给到喷嘴孔中，并且可以通过吸引装置吸引残留在喷嘴孔内的化学液体和纯水。 在用纯水处理晶片W之后，通过使用吸附装置吸引残留在喷嘴孔内的纯水，然后将气体喷射到晶片W的背面。
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公开(公告)号：US20070134431A1
公开(公告)日：2007-06-14
申请号：US11606930
申请日：2006-12-01
CPC分类号： H01L21/68728 , C23C18/1619 , C23C18/1628 , H01L21/6715 , H01L21/6723
摘要： An electroless plating apparatus performs electroless plating on a wiring portion with a plating solution using a reducer having low reduction power. The electroless plating apparatus includes a support member with a conductive portion, which supports a substrate; a plating-solution feeding mechanism which feeds the plating solution to a top surface of the substrate supported by the support member; a metal member which is provided at the support member in such a way as to be contactable to the plating solution and dissolves into the plating solution when in contact therewith to thereby generate electrons; and an electron supply passage which supplies the electrons generated by the dissolved metal member to the wiring portion on the substrate via the conductive portion of the support member.
摘要翻译： 无电解电镀装置使用具有低还原能力的还原剂在具有电镀液的布线部分上进行无电镀。 无电解电镀装置包括：支撑构件，其具有导电部分，其支撑基板; 电镀液供给机构，其将所述电镀液供给到由所述支撑部件支撑的所述基板的上表面; 金属构件，其设置在所述支撑构件上，以便能够与所述电镀液接触，并且在与所述电镀液接触时溶解到所述电镀液中，从而产生电子; 以及电子供给路径，其经由所述溶解金属构件产生的电子经由所述支撑构件的导电部向所述基板上的配线部供给。
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