摘要:
A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.
摘要:
There is provided a magnetic detecting element having a large ΔRA. A free magnetic layer has a three layer structure in which a CoFe layer, an NiaFeb alloy layer (where a and b are represented by at %, 0≦a≦25, and a+b=100), and a CoFe layer are laminated from the bottom. If the at % of Ni in an NiFe alloy that exists in the free magnetic layer is in this range, a spin-dependent bulk scattering coefficient β increases, and the product ΔRA of the resistance variation of the magnetic detecting element and the area of the element can be made increased.
摘要翻译:提供了具有大DeltaRA的磁检测元件。 自由磁性层具有三层结构,其中CoFe层,NiaFeb合金层(其中a和b由以%表示,0 <= a <= 25,a + b = 100)和CoFe层 从底部层压。 如果存在于自由磁性层中的NiFe合金中的Ni的at%在该范围内,则自旋相关体散射系数β增加,并且磁检测元件的电阻变化的乘积DeltaRA与 元素可以增加。
摘要:
A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.
摘要:
A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of platinum (Pt) disposed on the free magnetic layer. Consequently, it is possible to greatly decrease the magnetostriction of the free magnetic layer while maintaining a high rate of change in resistance compared with a tunneling magnetic sensing element which is not provided with a first protective layer.
摘要:
A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.
摘要:
A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1 constituting the tunneling magnetic sensing element includes a portion in which a pinned magnetic layer, a barrier layer, and a free magnetic layer are disposed in that order from the bottom. An enhancing layer disposed on the barrier layer side of the free magnetic layer includes a first enhancing layer on the barrier layer side and a second enhancing layer on the soft magnetic layer side, and the Fe content of a CoFe alloy constituting the first enhancing layer is specified to be larger than the Fe content of the CoFe alloy of the second enhancing layer.
摘要:
A magnetic sensing element includes a multilayer film including a pinned magnetic layer in which the magnetization direction is pinned in one direction, a free magnetic layer, and a nonmagnetic layer provided between the pinned magnetic layer and the free magnetic layer. In the magnetic sensing element, at least one of the pinned magnetic layer and the free magnetic layer includes a half-metallic alloy layer and a CoxFe100-x layer is provided between the half-metallic alloy layer and the nonmagnetic layer.
摘要翻译:磁传感元件包括多层膜,该多层膜包括磁化方向被钉在一个方向上的钉扎磁性层,自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层。 在磁感应元件中,被钉扎的磁性层和自由磁性层中的至少一个包括半金属合金层,并且Co x Fe x Fe x Al x O x层是 设置在半金属合金层和非磁性层之间。
摘要:
A free magnetic layer is a laminated body of a CO2MnZ alloy layer (Z is one or more elements selected from a group consisting of Al, Sn, In, Sb, Ga, Si, Ge, Pb, and Zn) and a CoaFe100-a alloy layer. The CoaFe100-a alloy layer has a composition ratio 76≦a≦100 or a face-centered cubic (fcc) structure, in which an equivalent crystal face expressed as a {111} plane is preferentially oriented in a direction parallel to a film surface, and the CoaFe100-a alloy layer is in contact with the nonmagnetic material layer.
摘要翻译:自由磁性层是CO 2 N 2 MnZ合金层的层叠体(Z是选自Al,Sn,In,Sb,Ga,Si,Ge,Pb中的一种或多种元素 ,和Zn)以及Co和/或Al-100合金层。 Co / Al合金层的组成比为76 <= a <= 100或面心立方(fcc)结构,其中等效晶体 以{111}面表示的面优先在平行于膜表面的方向上取向,并且Co和/或Fe-100合金层与非磁性接触 材料层。
摘要:
There are provided a magnetic detecting element capable of maintaining large ΔRA and of reducing magnetostriction by improving a material forming a free magnetic layer, and a method of manufacturing the same. An NiFeX alloy layer is formed in a free magnetic layer. For example, the element X is Cu. The NiFeX alloy layer formed in the free magnetic layer makes it possible to maintain large ΔRA and to more reduce the magnetostriction of the free magnetic layer, compared with a structure in which an NiFe alloy layer is formed in the free magnetic layer.
摘要:
The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned magnetic layer, improving reproduction output and properly complying with a narrower gap, and a method of manufacturing the magnetic detecting element. The pinned magnetic layer has a synthetic ferrimagnetic structure, and the first antiferromagnetic layer has a predetermined space C formed at the center in the track width direction to produce exchange coupling magnetic fields only between the first antiferromagnetic layer and both side portions of a first magnetic layer of the pinned magnetic layer. Therefore, the magnetization of the pinned magnetic layer can be pinned, and an improvement in reproduction output and gap narrowing can be realized. Furthermore, a magnetic detecting element with high resistance to electrostatic damage (ESD) can be manufactured. Thus, a magnetic detecting element adaptable for a future higher recording density can be provided.