公开(公告)号：US06317113B1

公开(公告)日：2001-11-13

申请号：US09384412

申请日：1999-08-27

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： G09G336

CPC分类号： G09G3/3648 ,  G09G2310/06

摘要： The present invention discloses a method for driving a tin film transistor, and more particularly, a method for driving a thin film transistor of a liquid crystal display. Voltage for driving a gate is changed such that peak values of the gate pulse voltage in positive field periodic scanning time and negative field periodic scanning time are not equal, and the difference therebetween is not larger than double of voltage peak value of a data signal line. Therefore, voltage reduction of liquid crystal capacitor can be decreased without enlarging the capacitance thereof. Further, since the gate voltage applied is smaller in a half of each period, the thin film transistor of the liquid crystal display is less influenced by an electric field and thus the voltage stress is reduced.

摘要翻译： 本发明公开了一种用于驱动锡膜晶体管的方法，更具体地说，涉及一种用于驱动液晶显示器的薄膜晶体管的方法。 用于驱动栅极的电压改变，使得正场周期扫描时间和负场周期扫描时间中的栅极脉冲电压的峰值不相等，并且它们之间的差不大于数据信号线的电压峰值的两倍 。 因此，可以降低液晶电容器的电压降低，而不会增加其电容。 此外，由于施加的栅极电压在每个周期的一半中较小，所以液晶显示器的薄膜晶体管较少受到电场的影响，因此电压应力减小。

公开(公告)号：US06265249B1

公开(公告)日：2001-07-24

申请号：US08982004

申请日：1997-12-01

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  G02F1/1368 ,  H01L29/78606 ,  H01L29/78669

摘要： An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can be higher than conventional method and the insulating layer is more free of pin-holes. After the insulating layer in the thin oxide region of the TFT is etched away, conventional fabrication processes are followed. The dielectric of the thin film oxide region is the same as that of the conventional TFT; but the dielectric in the vicinity of the thin oxide region, the crossovers of the data lines and the scan lines, and the gate dielectric layer of the TFT are now composed of the high quality insulating layer. The TFT structure can improve the yield of fabrication by confining the channel region in the shadow of the gate electrode to reduce the leakage photo-current, and by reducing the steps at crossovers steps and interconnections to avoid open-circuit.

摘要翻译： 在形成薄膜晶体管（TFT）的栅电极之后，在衬底上生长另外的高质量绝缘层。 绝缘层的生长温度可以高于常规方法，并且绝缘层更没有针孔。 在TFT的薄氧化物区域中的绝缘层被蚀刻掉之后，遵循常规的制造工艺。 薄膜氧化物区域的电介质与常规TFT的电介质相同; 但是薄氧化物区域附近的电介质，数据线和扫描线的交叉点以及TFT的栅极电介质层现在由高质量绝缘层构成。 TFT结构可以通过将沟道区域限制在栅电极的阴影中来降低制造的产量，以减少漏电光电流，并且通过减小跨接步骤和互连的步骤以避免开路。

公开(公告)号：US06261880B1

公开(公告)日：2001-07-17

申请号：US09317134

申请日：1999-05-24

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： A01L21336

CPC分类号： H01L27/1288 ,  G02F1/1368 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765

摘要： A method for forming a TFT device comprises the following steps. First, a first metal layer, a first insulating layer, a active layer and a contact layer are formed on the substrate in sequence. Next, a first photomask is used to define the contact layer, the active layer, the first insulating layer, and the first metal layer. Then, a second insulating layer and a transparent conducting layer are formed on the contact layer and the substrate in sequence. A second photomask is used to define the second insulating layer and the transparent conducting layer to expose a surface of the contact layer. A second metal layer is formed on the transparent conducting layer and contact layer. A third photomask is used to define the second metal layer to form the S/D structures. Then, the S/D structures are used to serve as a mask for etching the contact layer. Then, a passivation layer is formed on the second metal layer, the transparent conducting layer and the substrate, and a four photomask is used to define the passivation layer.

摘要翻译： 一种形成TFT器件的方法包括以下步骤。 首先，依次在基板上形成第一金属层，第一绝缘层，有源层和接触层。 接下来，使用第一光掩模来限定接触层，有源层，第一绝缘层和第一金属层。 然后，依次在接触层和基板上形成第二绝缘层和透明导电层。 第二光掩模用于限定第二绝缘层和透明导电层以暴露接触层的表面。 在透明导电层和接触层上形成第二金属层。 第三光掩模用于限定第二金属层以形成S / D结构。 然后，使用S / D结构作为蚀刻接触层的掩模。 然后，在第二金属层，透明导电层和基板上形成钝化层，并且使用四个光掩模来限定钝化层。

公开(公告)号：US5260818A

公开(公告)日：1993-11-09

申请号：US881076

申请日：1992-05-11

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： G02F1/1362 ,  G02F1/1343

CPC分类号： G02F1/13624 ,  G02F1/136259

摘要： A liquid crystal display panel with a repair capability that has a plurality of optical display cells arranged in a matrix format with scan lines and orthogonal data lines, at least two field effect transistors associated with each cell adapted to each operate in parallel one half of a split plate electrode. A means is provided to segregate one of the transistors when it is defective. Also, is provided a means to electrically join the parts of the plate electrode. The method involves providing the above described display panel, testing the panel and noting the existence of any defective transistors, segregating the defective transistor, and joining the parts of the split plate electrode of the cells associated with a defective transistor.

摘要翻译： 一种具有修复能力的液晶显示面板，其具有以扫描线和正交数据线排列成矩阵格式的多个光学显示单元，至少两个与各个单元相关联的场效应晶体管与每个单元相配合， 分裂板电极。 提供了一种当缺陷时隔离晶体管中的一个的装置。 而且，提供了一种用于电连接板电极的部件的装置。 该方法包括提供上述显示面板，测试面板，注意存在缺陷晶体管，隔离缺陷晶体管以及连接与缺陷晶体管相关联的单元的分离板电极的部分。

公开(公告)号：US5196911A

公开(公告)日：1993-03-23

申请号：US674451

申请日：1991-03-25

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： H01L31/113 ,  H01L31/20

CPC分类号： H01L31/1136 ,  H01L31/202 ,  Y02E10/50

摘要： A thin film transistor photodetector which has the combined merits of the photodiode and the photoconductor without their problems. The resulting device of this process has a accumulation gate on the bottom of the active semiconductor layer and a transparent depletion gate on the top of the active semiconductor layer. The gate length of the depletion gate is smaller than that of the accumulation gate.

摘要翻译： 一种薄膜晶体管光电探测器，其光电二极管和光电导体的组合优点没有问题。 所得到的该工艺的器件在有源半导体层的底部具有堆积栅极，在有源半导体层顶部具有透明的耗尽栅极。 耗尽栅极的栅极长度小于累积栅极的栅极长度。

公开(公告)号：US5193018A

公开(公告)日：1993-03-09

申请号：US783575

申请日：1991-10-28

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： G02F1/13

CPC分类号： G02F1/13

摘要： A matrix display system includes an active matrix display device having an array of liquid crystal picture elements (pixel) with associated switches using thin film transistors (TFT). The pixels are arranged in groups, each having two pixels and switched by two complementary TFTs. The n-channel TFTs are switched on by a positive pulse and the p-channel TFTs are switched on by a negative pulse. The two switching signals are alternately fed from a row conductor which feeds both the n-channel TFTs and the p-channel TFTs on the same row. Each group of the two TFTs are addressed via the same row conductor and the same column conductor, which carries the data signal. In this way, either the number of row conductors are reduced by one half or the number of column conductors are reduced by one half.

摘要翻译： 矩阵显示系统包括具有使用薄膜晶体管（TFT）的相关开关的液晶像素（像素）阵列的有源矩阵显示装置。 像素被分组布置，每个具有两个像素并由两个互补TFT切换。 n沟道TFT由正脉冲接通，p沟道TFT通过负脉冲接通。 两个开关信号从在同一行馈送n沟道TFT和p沟道TFT两者的行导体交替馈送。 两组TFT中的每一组通过同一行导体和同一列导体进行寻址，该列导体承载数据信号。 以这种方式，行导体的数量减少了一半，或者列导体的数量减少了一半。

公开(公告)号：US5017983A

公开(公告)日：1991-05-21

申请号：US389227

申请日：1989-08-03

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/6675 ,  H01L29/78645 ,  H01L29/78648

摘要： The present invention is a high speed thin film transistor with an accumulation gate and a depletion gate. When a positive voltage is applied to the accumulation gate, the electrons are accumulated in the channel region of the accumulation gate and the transistor is operated at the "on" state. If a negative voltage is applied to the depletion gate, the accumulated electrons are depleted, and the transistor is operated at the "off" state. The on-current of the thin film transistor is the same as that of conventional thin film transistors; however, a smaller off-current of the transistor is obtained.

摘要翻译： 本发明是具有堆积栅极和耗尽栅极的高速薄膜晶体管。 当向积聚栅极施加正电压时，电子被累积在积聚栅极的沟道区域中，并且晶体管在“导通”状态下操作。 如果向耗尽栅施加负电压，则累积的电子被耗尽，并且晶体管在“关”状态下运行。 薄膜晶体管的导通电流与传统薄膜晶体管的导通电流相同; 然而，获得晶体管的较小的截止电流。