公开(公告)号：US3426682A

公开(公告)日：1969-02-11

申请号：US3426682D

申请日：1967-04-27

申请人： SIDNEY A CORREN ,  MYRON A COLER

发明人： CORREN SIDNEY A ,  COLER MYRON A

IPC分类号： F42B3/13 ,  F42B37/00 ,  C06C5/00 ,  C06C5/04

CPC分类号： F42B3/13

公开(公告)号：US20240114792A1

公开(公告)日：2024-04-04

申请号：US17956023

申请日：2022-09-29

申请人： Hangzhou Dianzi University

发明人： Jianjun Luo ,  Chunyang Feng

IPC分类号： H01L31/0525 ,  F42B3/13 ,  H01L27/08

CPC分类号： H01L27/16 ,  F42B3/13 ,  H01L27/0802

摘要： A detonator for an explosive material is described. The detonator includes a semiconductor bridge, coupled with the explosive material, including thermal feedback mechanism is provided via one or more thermistors. An exemplary mechanism includes a semiconductor bridge with a polysilicon resistor and a pair of thermistors. The two thermistors are disposed to be substantially close to or sandwich the polysilicon resistor. When the temperature surrounding the polysilicon resistor is getting upwards, the temperature surrounding the thermistors is equally going up. When the temperature reaches a critical point, but below the threshold of the polysilicon resistor, the resistance of the thermistors drops suddenly or drastically, causing the current driving up the temperature of the polysilicon resistor to divert through the VOX temp resistors. Subsequently the current going through the polysilicon resistor is reduced, causing the temperature to drop downwards.

公开(公告)号：US09581419B2

公开(公告)日：2017-02-28

申请号：US14319402

申请日：2014-06-30

申请人： HALLIBURTON ENERGY SERVICES, INC.

发明人： James Marshall Barker ,  Tony Forbes Grattan

IPC分类号： F42B3/13

CPC分类号： F42B3/13 ,  F42C19/0811 ,  F42D1/05

摘要： Disclosed is a method and apparatus for use in initiating explosives used in application including well perforating systems. The initiator uses an air gap separating an electrically triggered semiconductor bridge plasma energy creator and a reactive foil abutting an explosive.

摘要翻译： 公开了一种用于启动应用中使用的爆炸物的方法和装置，包括穿孔系统。 引发剂使用气动分隔电触发的半导体桥等离子体能量产生器和邻接爆炸物的反应箔。

公开(公告)号：US20150292849A1

公开(公告)日：2015-10-15

申请号：US14544203

申请日：2014-12-09

申请人： Hunting Titan, Inc.

发明人： Nolan C. Lerche ,  James E. Brooks

IPC分类号： F42C19/08 ,  H02J7/00 ,  F42C15/40

CPC分类号： F42C19/08 ,  F42B3/13 ,  F42C15/40 ,  F42D1/05 ,  F42D3/04 ,  H02J7/0052 ,  H03K3/537

摘要： A downhole explosive detonation comprises a high voltage electro-explosive initiator comprising an input high voltage power supply with a low impedance shunting fuse, a flexible electrical link and a capacitor discharge unit. Explosive is initiated in a direction approximately parallel, or in another version perpendicular to the capacitor discharge unit. A unique configuration and construction of the assembly allows installation through a small service port in the gun housing structure for more efficient gun arming. A real time downhole voltage monitoring is described that transmits voltage readings to the surface during a firing sequence.

摘要翻译： 井下爆炸爆炸包括高压电炸药引爆器，其包括具有低阻分流保险丝的输入高压电源，柔性电连接器和电容器放电单元。 爆炸物在大致平行的方向上开始，或以垂直于电容器放电单元的另一种形式开始。 组装的独特配置和结构允许通过枪壳结构中的小型服务端口进行安装，以实现更有效的枪械布防。 描述了实时井下电压监测，其在点火序列期间将电压读数传递到表面。

公开(公告)号：US20150007739A1

公开(公告)日：2015-01-08

申请号：US14333769

申请日：2014-07-17

申请人： WaferTech, LLC

发明人： Re-Long CHIU ,  Sharon YING

IPC分类号： F42D1/045

CPC分类号： F42D1/045 ,  F42B3/10 ,  F42B3/13 ,  F42C19/0811 ,  F42C19/12

摘要： An explosive device using a semiconductor explosion initiator device provides an MOS capacitor formed on a semiconductor substrate and including a silicide layer formed over a doped silicon layer formed over an oxide layer. The oxide layer is formed on an N-well formed in a semiconductor substrate. A voltage source applies a voltage which may be a pulsed voltage, across the MOS capacitor sufficient to cause the avalanche breakdown of the oxide layer and the diffusion of metal from the silicide layer into the doped silicon of the N-well formed in the substrate. The chemical reaction between the metal and the doped silicon causes the generation of a plasma which ignites a pyrotechnic material or ignites or detonates other explosive material in contact with the semiconductor explosion initiator device.

摘要翻译： 使用半导体爆炸引发装置的爆炸装置提供形成在半导体衬底上的MOS电容器，并且包括在氧化物层上形成的掺杂硅层上形成的硅化物层。 氧化物层形成在半导体衬底中形成的N阱上。 电压源施加跨过MOS电容器的足够的脉冲电压的电压，足以引起氧化物层的雪崩击穿和金属从硅化物层扩散到在衬底中形成的N阱的掺杂硅中。 金属和掺杂硅之间的化学反应导致产生点燃烟火材料的等离子体，或点燃或引爆与半导体爆炸引发装置接触的其它爆炸物质。

公开(公告)号：US08408131B1

公开(公告)日：2013-04-02

申请号：US13353953

申请日：2012-01-19

申请人： Christopher J. Nance

发明人： Christopher J. Nance

IPC分类号： F42C11/00

CPC分类号： F42B3/103 ,  F42B3/12 ,  F42B3/124 ,  F42B3/13

摘要： An initiator assembly that includes a header body, at least one seal member, an insulating spacer, a frame member, an initiator and at least one terminal. The header body has at least one first terminal aperture formed therethrough. The seal member is received in the first terminal aperture. The insulating spacer is received over the header body. The frame member overlies the insulating spacer and defines an interior aperture. The initiator is received in the interior aperture and is abutted against the insulating spacer on a side opposite the header body. The initiator has an exploding foil initiator and includes a plurality of initiator contacts. The terminal is received through the insulating spacer and the at least one seal. The terminal is disposed outwardly of the interior aperture and is electrically coupled to an associated one of the initiator contacts.

摘要翻译： 一种引发器组件，其包括集管主体，至少一个密封构件，绝缘间隔件，框架构件，起动器和至少一个端子。 集管主体具有穿过其中形成的至少一个第一端子孔。 密封构件被容纳在第一端子孔中。 绝缘垫片被接收在头部主体上。 框架构件覆盖绝缘间隔件并且限定内部孔。 起动器被容纳在内部孔中，并且与头部主体相对的一侧抵靠绝缘垫片。 引发剂具有爆炸箔引发剂并且包括多个引发剂触点。 端子通过绝缘间隔件和至少一个密封件被接收。 端子设置在内部孔的外部并且电耦合到相关联的一个启动器触点。

公开(公告)号：US07866264B2

公开(公告)日：2011-01-11

申请号：US12497171

申请日：2009-07-02

申请人： Christopher J. Nance

发明人： Christopher J. Nance

IPC分类号： F42B3/12

CPC分类号： F42B3/103 ,  F42B3/13

摘要： An initiator that includes a header body, an insulating spacer, an initiator chip, a plurality of terminals and a plurality of contacts. The insulating spacer is coupled to the header body. The initiator chip that forms at least a portion of an exploding foil initiator and includes a plurality of electric interfaces. The initiator chip is secured to a side of the insulating spacer opposite the header body. The terminals extend through the header body. The contacts electrically couple the electric interfaces to the terminals. The cover is coupled to the header body and cooperates with the header body to house the insulating spacer, the initiator chip and the contacts. A method for forming an initiator is also provided.

摘要翻译： 一种引发器，包括一个插头主体，一个绝缘隔离器，一个启动器芯片，多个端子和多个触点。 绝缘垫片与头部主体相连。 所述起始器芯片形成爆炸箔引发器的至少一部分并且包括多个电接口。 引发器芯片被固定在绝缘间隔件与集管主体相对的一侧。 端子延伸穿过主体。 触点将电接口电耦合到端子。 盖子连接到集管主体并与集管主体配合以容纳绝缘垫片，起动器芯片和触头。 还提供了一种形成引发剂的方法。

公开(公告)号：US20080116671A1

公开(公告)日：2008-05-22

申请号：US10559658

申请日：2004-12-06

申请人： Yasushi Takahashi

发明人： Yasushi Takahashi

IPC分类号： B60R21/013 ,  H01L25/00

CPC分类号： H01L23/49589 ,  B60R2021/26029 ,  F42B3/13 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/8385 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19106 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A semiconductor device has the package structure which used the lead frame, a communication device (semiconductor chip) is arranged to the main surface side of a supporting body, and the condenser for firing is arranged to the back side of the opposite side to the main surface of said supporting body. By having such structure, a miniaturization, the reduction of a manufacturing cost, and high reliability of a semiconductor device and an ignition device can be aimed at.

摘要翻译： 半导体器件具有使用引线框架的封装结构，在支撑体的主表面侧设置有通信装置（半导体芯片），并且用于点火的冷凝器配置在与主体相反的一侧的背面 所述支撑体的表面。 通过这样的结构，可以针对半导体装置和点火装置的小型化，制造成本的降低和高可靠性。

公开(公告)号：US20080017063A1

公开(公告)日：2008-01-24

申请号：US11829526

申请日：2007-07-27

申请人： Bernardo Martinez-Tovar ,  Martin Foster

发明人： Bernardo Martinez-Tovar ,  Martin Foster

IPC分类号： F42C19/12

CPC分类号： F42B3/13

摘要： A titanium semiconductor bridge igniter (10, 10′) has a substrate (12, 12′) on which is carried a pair of spaced-apart pads (18a, 18b) connected by a bridge (20). The pads (18a, 18b) and bridge (20) are made of a layer of polysilicon (22) or crystalline silicon (22′) covered by a layer of titanium (24). Metal lands (26a, 26b) overlie the pads (18a, 18b) but leave the bridge (20) exposed so that it can be placed in contact with an energetic material charge (42). A method of stabilizing the titanium semiconductor bridge igniter (10, 10′) against temperature-induced variations in electrical resistance of bridge (20) includes heating the titanium semiconductor bridge igniter (10, 10′) to an elevated temperature, e.g., from about 37° C. to about 250° C.

摘要翻译： 钛半导体桥式点火器（10,10'）具有衬底（12,12'），在衬底上承载有由桥（20）连接的一对间隔开的衬垫（18a，18b）。 焊盘（18a，18b）和桥（20）由多晶硅层（22）或由一层钛（24）覆盖的晶体硅（22'）制成。 金属焊盘（26a，26b）覆盖焊盘（18a，18b），但是使桥（20）露出，使得其可以放置成与高能材料装料（42）接触。 稳定钛半导体桥接点火器（10,10'）以抵抗温度引起的桥（20）的电阻变化的方法包括将钛半导体桥接点火器（10,10'）加热到升高的温度，例如从约 37℃至约250℃

公开(公告)号：US20070099335A1

公开(公告)日：2007-05-03

申请号：US11261831

申请日：2005-10-28

申请人： Shubhra Gangopadhyay ,  Rajesh Shende ,  Steve Apperson ,  Shantanu Bhattacharya ,  Yuanfang Gao

发明人： Shubhra Gangopadhyay ,  Rajesh Shende ,  Steve Apperson ,  Shantanu Bhattacharya ,  Yuanfang Gao

IPC分类号： H01L51/40

CPC分类号： F42B3/13

摘要： A chip for igniting nanoenergetic materials, includes a substrate, an igniter positioned on the substrate and the nanoenergetic material arranged in a linear pattern positioned on said substrate. A method of making a chip for igniting nanoenergetic materials includes providing a substrate, forming an igniter on the substrate and coating the substrate with a polymer layer. A pattern of nanoenergetic material comprising a fuel and an oxidizer is formed on the substrate. The nanoenergetic material is ignited by the igniter by supplying power to the leads attached to the heater film.

摘要翻译： 用于点燃纳米能量材料的芯片包括衬底，位于衬底上的点火器和以位于所述衬底上的线性图案布置的纳米能量材料。 制造用于点燃纳米能量材料的芯片的方法包括提供衬底，在衬底上形成点火器并用聚合物层涂覆衬底。 在基板上形成包含燃料和氧化剂的纳米能量材料的图案。 纳米能量材料通过向连接到加热器膜的引线供电来点燃点火器。