摘要:
A floating gate driver circuit includes a level shifter, a pass element, a bistable circuit and a control logic circuit, to shift the voltage level of a control signal from a lower one to a higher one. The level shifter or the pass element has loads dynamically controlled by the control logic circuit to filter malfunction caused by dv/dt noise induced by a floating node.
摘要:
An apparatus, comprising: a PMOS current mirror have a first PFET and a second PFET coupled at their respective gates; a first current source coupled to drain of the first PFET; a second current source configured to have a current that is greater than the first current source, coupled to the drain of the second PFET; a capacitor coupled to the gates of the PFET current mirror; a third PFET gate-coupled to the current mirror; a driver NFET having a gate coupled to the drain of the third PFET, wherein a drain of the driver NFET is coupled to the capacitor.
摘要:
A two-stage post driver circuit includes a controlling circuit, a pull-up unit and a pull-down unit. A first N-type transistor of the pull-down unit and a first P-type transistor of the pull-up unit are both connected to an output pad. The controlling circuit is used for controlling the first N-type transistor and the first P-type transistor. Consequently, when the pull-up unit or the pull-down unit is turned on, the voltage difference between the drain terminal and the source terminal of the first N-type transistor or the first P-type transistor is lower than a voltage stress.
摘要:
A second driver is provided in addition to a first driver outputting an output signal in accordance with a voltage of an input signal. When the output signal changes from a first voltage level to a second voltage level in accordance with a voltage change of the input signal, a control part controls the second driver to assist the signal change during a period from a change start time until the output signal exceeds a third voltage level. The control part controls the second driver to suppress the signal change during a period from the time when the output signal exceeds the third voltage level until it reaches the second voltage level.
摘要:
A signal transmission circuit includes a pre-driver and a driver. The pre-driver is configured to generate a first drive signal in response to a first delay signal and a first selection signal and to generate a second drive signal in response to a second delay signal, a second selection signal, and a pulse signal. The driver is configured to drive a transmission signal in response to the first and second drive signals. The first delay signal is enabled at a second time which is later than a first time when an input signal is received, the second delay signal is enabled at a third time which is later than the second time, and the pulse signal is enabled at a fourth time which is delayed by a predetermined delay period from the first time.
摘要:
In examples, apparatus and methods are provided that mitigate buffer slew rate variations due to variations in output capacitive loading, a fabrication process, a voltage, and/or a temperature (PVT). An exemplary embodiment includes an inverting buffer having an input and an output, as well as an active resistance series-coupled with a capacitor between the input and the output. The resistance of the active resistance varies based on a variation in a fabrication process, a voltage, and/or temperature. The active resistance can be a passgate. In another example, a CMOS inverter's output is coupled to the input of the inverting buffer, and two series-coupled inverting buffers are coupled between the input of the CMOS inverter and the output of the inverting buffer.
摘要:
A circuit may include an input node configured to receive a signal and an output node configured to be coupled to a load. The circuit may also include a first circuit coupled between the input node and the output node. The first circuit may be configured to receive the signal and to drive the signal on the output node at a first voltage. The circuit may also include an active device coupled to the output node and a second circuit coupled to the active device and the input node. The second circuit may be configured to receive the signal and to drive the signal to the active device at a second voltage. The circuit may also include a tap circuit configured to selectively apply a modified version of the signal to the signal driven by the second circuit before the signal driven by the second circuit reaches the active device.
摘要:
An electrical circuit for manipulating at least one of a voltage and a current on a bus wire comprises a first switch having a first gate, a first source, and a first potential reduction unit. The first potential reduction unit is suitable for lowering a potential difference between the first gate and the first source of the first switch, wherein the lowering of the potential difference is caused by a shutting-off of a first control voltage.
摘要:
A semiconductor device including an input terminal to receive an input signal and an output terminal to output an output signal includes delay elements connected in series with the input terminal and each to assign the delay to the input signal input from the input terminal, selectors connected to output sides of the delay elements and each to select one of output signals of the delay elements based on a selection signal for selecting the one of the output signals of the delay elements to return the selected one of the output signals to the output terminal, and delay circuits disposed corresponding to the selectors and each to cause switching of the selection signal input into a corresponding one of the selectors to occur after switching of a signal level of the input signal input into the corresponding one of the selectors serving as a signal turning point.
摘要:
A decoupling circuit includes an inverter. The inverter includes i (i is an integer of 1 or more) PMOS transistors each having a first gate electrode, and j (j is an integer of 0 or more) PMOS transistors each having a second gate electrode. The inverter includes m (m is an integer of 1 or more) NMOS transistors each having a third gate electrode, and n (n is an integer of 0 or more) NMOS transistors each having a fourth gate electrode. The first to fourth gate electrodes are coupled to an input end of the inverter. A total area of the first and second gate electrodes is different from a total area of the third and fourth gate electrodes.